VISHAY Si9936BDY Technical data
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SPICE Device Model Si9936BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
SUBCIRCUIT MODEL SCHEMATIC
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
model. All model parameter values
gd
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72573 www.vishay.com
02-Jun-04 1
SPICE Device Model Si9936BDY
Vishay Sil
iconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage V
On-State Drain Current
a
Drain-Source On-State Resistancea r
Forward Transconductancea g
Forward Voltagea V
Dynamic
b
Total Gate Charge Qg 8 8.6
Gate-Source Charge Qgs 1.8 1.8
Gate-Drain Charge Qgd
Turn-On Delay Time t
Rise Time tr 8 15
Turn-Off Delay Time t
Fall Time tf
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
GS(th)
I
D(on)
DS(on)
V
fs
I
SD
V
= VGS, ID = 250 µA
DS
V
≥ 5 V, VGS = 10 V
DS
VGS = 10 V, ID = 6 A 0.027 0.028
V
= 4.5 V, ID = 4.9 A 0.038 0.041
GS
= 15 V, ID = 6 A 13 12 S
DS
= 1.7 A, VGS = 0 V 0.80 0.80 V
S
V
= 15 V, VGS = 10 V, ID = 6 A
DS
1.9 V
165 A
Ω
nC
1.5 1.5
16 10
d(on)
= 15 V, RL = 15 Ω
V
DD
≅ 1 A, V
I
23 25
d(off)
D
= 10 V, RG = 6 Ω
GEN
ns
6 10
www.vishay.com Document Number: 72573
2 02-Jun-04
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