VISHAY Si9912 Technical data

查询SI9912供应商

Half-Bridge MOSFET Driver for Switching Power Supplies

FEATURES APPLICATIONS

Si9912

Vishay Siliconix

D 4.5- to 5.5-V Operation D Undervoltage Lockout D 250-kHz to 1-MHz Switching Frequency D Shutdown Quiescent Current <5 mA D One Input PWM Signal Generates Both Drive

D Multiphase Desktop CPU Supplies D Single-Supply Synchronous Buck Converters D Mobile Computing CPU Core Power Converters D Standard-Synchronous Converters

D High Frequency Switching Converters D Bootstrapped High-Side Drive D Operates from 4.5- to 30-V Supply D TTL/CMOS Compatible Input Levels D 1-A Peak Drive Current D Break-Before-Make Circuit

DESCRIPTION

The Si9912 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with “floating” high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-ns transition time. The Si9912 comes with an internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A shutdown pin is used to enable the

driver. When disabled, the quiescent current of the driver is less than 5 mA.

The Si9912 is available in both standard and lead (Pb)-free, 8-pin SOIC packages for operation over the industrial operation range (−40_C to 85_C).

FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE

V

DD

Undervoltage

SD

IN

Document Number: 71311 S-40134—Rev. B, 16-Feb-04

D1

Level Shift

BOOT

V

DC

Q

1

OUT

H

V

S

V

DD

OUT

L

+

V

−

BBM

GND

C

BOOT

OUTPUT

Q

2

TRUTH TABLE

VSSD IN V

L L L L L

L L H L L

L H L H L

L H H L H

H L L L L

H L H L L

H H L L L

H H H L H

OUTLVOUTH

www.vishay.com

1

Si9912

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Low Side Driver Supply Voltage V

Input Voltage on IN V

Shutdown Pin Voltage V

Bootstrap Voltage V

High Side Driver (Bootstrap) Supply Voltage V

Operating Junction Temperature Range T

Storage Temperature Range T

Power Dissipation (Note a and b) P

Thermal Impedance q

BOOT

DD

SD

stg

JA

IN

− V

J

D

S

Lead Temperature (soldering 10 Sec) 300 °C

Notes a. Device mounted with all leads soldered to P.C. Board b. Derate 8.3 W/_C above 25_C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

7.0

−0.3 to VDD +0.3

35.0

7.0

−40 to 125

−40 to 150

830 mW

125 °C/W

_

_C

V

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Limit Unit

Bootstrap Voltage (High-Side Drain Voltage) V

Logic Supply V

Bootstrap Capacitor C

Ambient Temperature T

SPECIFICATIONS

Test Conditions Unless Specified

Parameter Symbol

Power Supplies

VDD Supply V

I

Supply I

DD

I

Supply I

DD

I

Supply I

DD

I

Supply I

DD

I

Supply I

DD

I

Supply

DD

DD1(en)

DD2(en)

DD3(dis)

DD4(en)

DD5(dis)

I

DD(en)

I

DD(dis)

Boot Strap Current I

Reference Voltage

Break-Before-Make Reference Voltage V

Logic Inputs (SD, IN)

Input High V

Input Low V

Undervoltage Lockout

VDD Undervoltage V

VDD Undervoltage Hysteresis V

DD

BOOT

BBM

IH

IL

UVL

HYST

V

SD = H, IN = X, VS = 25 V, V

SD = L, IN = X, VS = 25 V, V

FIN = 300 kHz, SD = High, Driving Si4412DY 9 mA

FIN = 300 kHz, SD = Low, Driving Si4412DY 3 mA

V

VDD = 4.5 to 5.5 V

= 4.5 to 30 V, TA = −40 to 85_C

BOOT

SD = H, IN = H, VS = 0 V 1000

SD = H, IN = L, VS = 0 V 500

SD = L, IN = X, VS = 0 V 5

= 30 V 200

BOOT

= 30 V 5

BOOT

= 30 V, VS = 25 V, V

BOOT

= High 0.9 3 mA

OUTH

VDD Rising 3.7 4.3

BOOT

DD

BOOT

A

4.5 to 30

4.5 to 5.5

100 n to 1 m F

−40 to 85 _C

Limits

a

Min

4.5

1.1 3 V

0.7 V

DD

−0.3 0.3 V

Typ

0.4

b

a

Max

VDD + 0.3

DD

V

Unit

mA

V

www.vishay.com

2

Document Number: 71311

S-40134—Rev. B, 16-Feb-04

SPECIFICATIONS

VDD =

V

Si9912

Vishay Siliconix

Parameter Symbol

Test Conditions Unless Specified

VDD = 4.5 to 5.5 V

= 4.5 to 30 V, TA = −40 to 85_C

V

BOOT

Min

Limits

a

Typ

b

Bootstrap Diode

Diode Forward Voltage VF

D1

Forward Current = 100 mA 0.8 1 V

Output Drive Current

OUTH Source Current I

OUTH Sink Current I

OUTL Source Current I

OUTL Sink Current I

Timing (C

LOAD

= 3 nF)

OUTL Off Propagation Delay t

OUTL On Propagation Delay t

OUTH Off Propagation Delay t

OUTH On Propagation Delay t

OUTL Turn On Time t

OUTL Turn Off Time t

OUTH Turn On Time t

OUTH Turn Off Time t

Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

OUT(H+)

) V

OUT(H−

) VDD = 4.5 V, V

OUT(L+

−) VDD = 4.5 V, V

OUT(L

pdl(OUTL)

pdh(OUTL)

pdl(OUTH)

pdh(OUTH)

r(OUTL)

f(OUTL)

r(OUTH)

f(OUTH)

V

BOOT

− VS = 3.7 V, V

BOOT

− V

= 3.7 V, V

S

− V

= 2 V −0.4

OUTH

OUTL

S

− VS = 1 V 0.4

= 2 V −0.4

= 1 V 0.6

4.5

V

− VS = 4.5 V

BOOT

OUTL = 10 to 90% 25

OUTL = 90 to 10% 25

OUTH − V

= 10 to 90% 30

S

= 90 to 10% 20

S

30

20

30

20

Max

a

Unit

A

ns

TIMING WAVEFORMS

IN

OUT

L

OUT

H

V

S

50% 50%

t

pdh(OUTL)

t

90%

f(OUTL)

10%

t

pdh(OUTH)

r(OUTH)

90% 90%

10% 10%

pdl(OUTH)

10%

90%

t

f(OUTH)

t

r(OUTL)

t

pdl(OUTL)

Document Number: 71311 S-40134—Rev. B, 16-Feb-04

www.vishay.com

3