VISHAY Si7909DN Technical data

T

查询SI7909DN供应商

Si7909DN

PRODUCT SUMMARY

VDS (V) r

0.037 @ V

–12

0.048 @ V

0.068 @ V

3.30 mm

D1

8

D1

7

Ordering Information: Si7909DN-T1

(Ω)I

DS(on)

GS

GS

GS

PowerPAK 1212-8

D2

6

D2

5

Bottom View

Si7909DN–T1–E3 (Lead (Pb)–free)

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

(A)

D

= –4.5 V –7.7

= –2.5 V –6.8

= –1.8 V –5.7

S1

1

3.30 mm

G1

2

S2

3

G2

4

•TrenchFET® Power MOSFETS: 1.8-V Rated

• New Low Thermal Resistance PowerPAK
Package

• Advanced High Cell Density Process

• Ultra-Low r

, and High PD Capability

DS(on)

APPLICATIONS

• Load Switch

• PA Switch

• Battery Switch

• Bi-Directional Switch

S

1

G

1

D

1

P-Channel MOSFET

G

Vishay Siliconix

S

2

2

D

2

P-Channel MOSFE

®

Pb-free

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

TA = 25°C
T

= 85°C –5.5 –3.8

A

T

= 25°C

A

T

= 85°C 1.5 0.85

A

Continuous Drain Current (T

Pulsed Drain Current

= 150°C)

J

a

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b,c

DS

GS

I

D

I

DM

I

S

P

D

, T

J

stg

–7.7 –5.3

–2.3 –1.1

2.8 1.3

–12

±8

–20

–55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case Steady State R

Notes
a. Surface Mounted on 1“ x 1“ FR4 Board.
b. See Solder Profile (
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

t ≤ 10 sec

Steady State 75 94

R

thJA

thJC

* Pb containing terminations are not RoHS compliant, exemptions may apply

35 44

°C/W

45

Document Number: 71996
S-51210–Rev. C, 27-Jun-05

www.vishay.com

1

Si7909DN

5

Vishay Siliconix

New Product

SPECIFICATIONS TJ = 25°C, unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Unit

Static

V

Gate Threshold Voltage V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

GS(th)

I

GSS

I

DSS

I

D(on)

a

r

DS(on)

g

fs

V

SD

V

V

Total Gate Charge Qg

Gate-Source Charge Q

Gate-Drain Charge Q

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off DelayTime t

Fall Time t

Source-Drain Reverse Recovery Time t

gs

gd

d(on)

r

d(off)

f

rr

V

DS

4.3

I

90 135

D

Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

= VGS, ID = –700 µA –0.40 –1.0 V

DS

VDS = 0 V, VGS = ±8 V ±100

V

= –12 V, VGS = 0 V –1

DS

= –12 V, V

DS

≤ –5 V, V

DS

V

= –4.5 V, ID = –7.7 A 0.031 0.037

GS

= –2.5 V, ID = –6.8 A 0.040 0.048

V

GS

V

= –1.8 V, ID = –3.0 A 0.057 0.068

GS

V

= –6 V, ID = –7.7 A 17 S

DS

IS = –2.3 A, VGS = 0 V –0.7 –1.2 V

= –6 V, V

≅ –1 A, V

GS

V

= –6 V, RL = 6 Ω

DD

GEN

IF = –2.3 A, di/dt = 100 A/µs 70 110

= 0 V, TJ = 85°C –5

GS

= –4.5 V –20 A

GS

15.5 24

= –4.5 V, ID = –7.7 A

2.5

25 40

45 70

= –4.5 V, RG = 6 Ω

85 130

nA

µA

Ω

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted

20

VGS = 5 thru 2.5 V

16

2 V

12

8

– Drain Current (A)I

D

4

0

01234

– Drain-to-Source Voltage (V)

V

DS

Output Characteristics

1.5 V

1 V

20

16

12

8

– Drain Current (A)I

D

4

0

0.0 0.5 1.0 1.5 2.0 2.

TC = 125˚C

25˚C

–55˚C

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

www.vishay.com
2

Document Number: 71996

S-51210–Rev. C, 27-Jun-05