VISHAY Si7909DN Technical data

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Si7909DN

PRODUCT SUMMARY

VDS (V) r

0.037 @ V

–12

0.048 @ V

0.068 @ V

3.30 mm

D1

8

D1

7

Ordering Information: Si7909DN-T1

(Ω)I

DS(on)

GS

PowerPAK 1212-8

D2

6

D2

5

Bottom View

Si7909DN–T1–E3 (Lead (Pb)–free)

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

(A)

D

= –4.5 V –7.7

= –2.5 V –6.8

= –1.8 V –5.7

S1

1

3.30 mm

G1

2

S2

3

G2

4

•TrenchFET® Power MOSFETS: 1.8-V Rated

• New Low Thermal Resistance PowerPAK Package

• Advanced High Cell Density Process

• Ultra-Low r

, and High PD Capability

DS(on)

APPLICATIONS

• Load Switch

• PA Switch

• Battery Switch

• Bi-Directional Switch

S

1

G

1

D

1

P-Channel MOSFET

G

Vishay Siliconix

S

2

D

2

P-Channel MOSFE

®

Pb-free

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V Gate-Source Voltage V

a

TA = 25°C T

= 85°C –5.5 –3.8

A

T

= 25°C

A

T

= 85°C 1.5 0.85

A

Continuous Drain Current (T

Pulsed Drain Current

= 150°C)

J

a

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b,c

DS

GS

I

D

I

DM

I

S

P

D

, T

J

stg

–7.7 –5.3

–2.3 –1.1

2.8 1.3

–12

±8

–20

–55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case Steady State R

Notes a. Surface Mounted on 1“ x 1“ FR4 Board. b. See Solder Profile ( copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

t ≤ 10 sec

Steady State 75 94

R

thJA

thJC

* Pb containing terminations are not RoHS compliant, exemptions may apply

35 44

°C/W

45

Document Number: 71996 S-51210–Rev. C, 27-Jun-05

www.vishay.com

1

Si7909DN

5

Vishay Siliconix

New Product

SPECIFICATIONS TJ = 25°C, unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Unit

Static

V

Gate Threshold Voltage V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

GS(th)

I

GSS

I

DSS

I

D(on)

a

r

DS(on)

g

fs

V

SD

V

Total Gate Charge Qg

Gate-Source Charge Q

Gate-Drain Charge Q

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off DelayTime t

Fall Time t

Source-Drain Reverse Recovery Time t

gs

gd

d(on)

r

d(off)

f

rr

V

DS

4.3

I

90 135

D

Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

= VGS, ID = –700 µA –0.40 –1.0 V

DS

VDS = 0 V, VGS = ±8 V ±100

V

= –12 V, VGS = 0 V –1

DS

= –12 V, V

DS

≤ –5 V, V

DS

V

= –4.5 V, ID = –7.7 A 0.031 0.037

GS

= –2.5 V, ID = –6.8 A 0.040 0.048

V

GS

V

= –1.8 V, ID = –3.0 A 0.057 0.068

GS

V

= –6 V, ID = –7.7 A 17 S

DS

IS = –2.3 A, VGS = 0 V –0.7 –1.2 V

= –6 V, V

≅ –1 A, V

GS

V

= –6 V, RL = 6 Ω

DD

GEN

IF = –2.3 A, di/dt = 100 A/µs 70 110

= 0 V, TJ = 85°C –5

GS

= –4.5 V –20 A

GS

15.5 24

= –4.5 V, ID = –7.7 A

2.5

25 40

45 70

= –4.5 V, RG = 6 Ω

85 130

nA

µA

Ω

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted

20

VGS = 5 thru 2.5 V

16

2 V

12

8

– Drain Current (A)I

D

4

0

01234

– Drain-to-Source Voltage (V)

V

DS

Output Characteristics

1.5 V

1 V

20

16

12

8

– Drain Current (A)I

D

4

0

0.0 0.5 1.0 1.5 2.0 2.

TC = 125˚C

25˚C

–55˚C

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

www.vishay.com 2

Document Number: 71996

S-51210–Rev. C, 27-Jun-05

Si7909DN

New Product

TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted

2400

1800

1200

C – Capacitance (pF)

600

0

1.3

1.2

)

– On-Resistance (Ωr

DS(on)

0.12

0.09

VGS = 1.8 V

0.06

0.03

0.00 048121620

I

– Drain Current (A)

D

VGS = 2.5 V

VGS = 4.5 V

On-Resistance vs. Drain Current

5

VDS = 6 V

= 7.7 A

I

D

4

Vishay Siliconix

C

iss

C

oss

C

rss

024681012

VDS – Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V

= 7.7 A

I

D

– Gate-to-Source Voltage (V)

GS

V

– Source Current (A)I

S

3

2

1

0

048121620

Qg – Total Gate Charge (nC)

Gate Charge

20

10

TJ = 150˚C

TJ = 25˚C

1.1

(Normalized)

1.0

(on) – On–Resistance

DS

r

0.9

0.8 –50 –25 0 25 50 75 100 125 150

– Junction Temperature (˚C)

T

J

On-Resistance vs. Junction Temperature

0.12

0.10

)

ID = 7.7 A

– On-Resistance (Ωr

DS(on)

0.08

0.06

0.04

0.02

ID = 3 A

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

Document Number: 71996 S-51210–Rev. C, 27-Jun-05

0.00 012345

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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Si7909DN

)

q

)

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted

0.4

0.3

ID = 700 µA

0.2

0.1

Variance (V)V

GS(th)

0.0

–0.1

–0.2

–50 –25 0 25 50 75 100 125 150

TJ – Temperature (˚C)

Threshold Voltage

100

r

DS(on)

Limited

50

40

30

Power (W)

20

10

I

Limited

DM

0

0.1 60010.010.001

10 100

Time (sec

Single Pulse Power, Juncion-To-Ambient

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

–4

10

P(t) = 0.001

1

I

D(on)

Limited

– Drain Current (A)I

D

0.1

TA = 25˚C

Single Pulse

BV

DSS

Limited

P(t) = 0.01

P(t) = 0.1 P(t) = 1

P(t) = 10 dc

0.01

0.1 1 10 100

VDS – Drain-to-Source Voltage (V)

Safe Operating Area, Junction-To-Ambient

Single Pulse

–3

10

–2

10

S

–1

1 10 60010

uare Wave Pulse Duration (sec

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

– TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

100

t

1

t

2

= 65˚C/W

(t)

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Document Number: 71996

S-51210–Rev. C, 27-Jun-05

Si7909DN

New Product

TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.02

0.05

0.1

–3

10

Square Wave Pulse Duration (sec)

–2

10

Normalized Thermal Transient Impedance, Junction-to-Case

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

Single Pulse

–4

Vishay Siliconix

–1

110

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71996.

Document Number: 71996

www.vishay.com

S-51210–Rev. C, 27-Jun-05

5

VISHAY Si7909DN Technical data

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