Vishay Si7840BDP Datasheet

Vishay Siliconix

T

N-Channel 30-V (D-S) Fast Switching MOSFET

Si7840BDP

PRODUCT SUMMARY

VDS (V) R

0.0085 at V

30

0.0105 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

(A) Qg (Typ.)

D

16.5

13

14

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

• New Low Thermal Resistance PowerPAK

®

Power MOSFET

®

Package with Low 1.07 mm Profile

• 100 % R

PowerP AK SO-8

Tested

g

APPLICATIONS

• DC/DC Converters

• Optimized for “High-Side” Synchronous Rectifier
Operations

D

G

S

N-Channel MOSFE

6.15 mm

D

8

Ordering Information:

S

1

D

7

D

6

D

5

Bottom View

Si7840BDP-T1-E3 (Lead (Pb)-free)
Si7840BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)

5.15 mm

S

2

S

3

G

4

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150°C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Avalanche Current
Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TA = 25 °C

= 70 °C

T

A

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

, T

T

J

stg

16.5 11
13 8

3.7 1.6

4.1 1.8

2.6 1.1

30

± 20

50

20
20 mJ

- 55 to 150
260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case (Drain) Steady State

t ≤ 10 s

R

thJA

R

thJC

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73218
S09-0272-Rev. C, 16-Feb-09

23 30

°C/WSteady State 60 70

3.1 3.6

www.vishay.com

1

Si7840BDP

0

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Condition Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Reverse Recovery Charge

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Q

rr

V

V

DS

I

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ±20 V

V

= 30 V, V

DS

= 30 V, V

DS

≥ 5 V, V

DS

V

= 10 V, ID = 16.5 A

GS

V

= 4.5 V, ID = 13 A

GS

= 0 V

GS

= 0 V, TJ = 55°C

GS

= 10 V

GS

VDS = 15 V, ID = 16.5 A

IS = 3.7 A, V

= 15 V, V

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

D

GS

GEN

= 0 V

GS

= 4.5 V, ID = 16.5 A

= 10 V, Rg = 6 Ω

IF = 4.1 A, dI/dt = 100 A/µs

1.0 3.0 V

±100 nA

1

10

µA

30 A

0.007 0.0085

0.0084 0.0105

60 S

0.75 1.1 V

14 21

6

nCGate-Source Charge

3.5

0.2 0.7 1.2 Ω

17 26

14 21

39 60

14 21

26 40

20 nC

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

32

24

16

- Drain Current (A)I

D

8

0

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2

VGS = 10 thru 4 V

3 V

012345

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

- Drain Current (A)I

D

50

40

30

20

TC = 125˚C

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.

V

- Gate-to-Source Voltage (V)

GS

25˚C

-55˚C

Transfer Characteristics

Document Number: 73218

S09-0272-Rev. C, 16-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0

Si7840BDP

Vishay Siliconix

0.012

0.011

Ω)

0.010

0.009

0.008

On-Resistance (R

-

0.007

DS(on)

0.006

0.005

0.004

- Gate-to-Source Voltage (V)

GS

V

VGS = 4.5 V

VGS = 10 V

0 5 10 15 20 25 30 35 40

ID - Drain Current (A)

On-Resistance vs. Drain Current

6

VDS = 15 V

5

4

3

2

1

= 16.5 A

I

D

2500

2000

1500

1000

Capacitance (pF)

-

C

500

0

0 5 10 15 20 25 3

1.8

1.6

1.4

1.2

- On-Resistance
(Normalized)

1.0

DS(on)

R

0.8

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 10 V

= 16.5 A

I

D

0

0 2 4 6 8 10121416

40

10

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150˚C

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

Document Number: 73218
S09-0272-Rev. C, 16-Feb-09

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 25˚C

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

0.05

0.04

)

Ω

ID = 16.5 A

0.03

0.02

- On-Resistance (R

DS(on)

0.01

0.00
0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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3

Si7840BDP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.4

0.2

-0.0

ID = 250 μA

-0.2

Variance (V)V

-0.4

GS(th)

-0.6

-0.8

-1.0

-50 - 25 0 25 50 75 100 125 150

TJ - Temperature (˚C)

Threshold Voltage

100

Limited by R

Drain Current (A)I

-

D

DS(on)*

10

1

0.1
TC = 25 °C

Single Pulse

Power (W)

50

40

30

20

10

0

0.001

1 ms

10 ms

100 ms

1 s

10 s

dc

1

10 6000.1

Time (s)

Single Pulse Power

1000.01

0.1

Thermal Impedance

Normalized Effective Transient

0.01

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4

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-

4

10

Single Pulse

0.01

0.1 1 10 100

- Drain-to-Source Voltage (V)

V

DS

> minimum VGS at which R

* V

GS

DS(on)

is specified

Safe Operating Area, Junction-to-Case

Notes:

P

DM

t

1

t

2

t

thJA

thJA

100

1

t

2

= 58°C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-

3

10

-

2

10

-

1

Square Wave Pulse Duration (s)

1 10 60010

Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 73218

S09-0272-Rev. C, 16-Feb-09