Vishay Si7716ADN Schematic

New Product

N-Channel 30-V (D-S) MOSFET

Si7716ADN

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.0135 at V

30

0.0165 at V

PowerPAK® 1212-8

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

a, g

I

(A)

D

16

Qg (Typ.)

7.3 nC

FEATURES

• Halogen-free

• TrenchFET

• 100 % R

®

Gen III Power MOSFET

Tested

g

• 100 % UIS Tested

APPLICATIONS

RoHS

COMPLIANT

• DC/DC Conversion

- System Power

3.30 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: Si7716ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

3.30 mm

S

2

S

3

G

4

G

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T TA = 25 °C

TA = 70 °C Pulsed Drain Current Avalanche Current Avalanche Energy

Continuous Source-Drain Diode Current

L = 0.1 mH

T

Maximum Power Dissipation

T

TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

C

= 70 °C

C

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

260

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

I

S

30

± 20

a, g

16

b, c

12

b, c

9.5 32

15

11.25

a, g

16

b, c

2.9

V

g

A

g

mJ

A

27.7

P

D

T

, T

J

stg

17.7

b, c

3.5

b, c

2.2

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. g. Package limited.

Document Number: 68704 S-81450-Rev. A, 23-Jun-08

b, f

t ≤ 10 s

Steady State

R

thJA

R

thJC

29 36

3.6 4.5

°C/W

www.vishay.com

1

New Product

Si7716ADN

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

a

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 10 A

GS

V

= 4.5 V, ID = 7 A

GS

V

= 15 V, ID = 10 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

IS = 3 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

1.2 2.5 V

= 0 V

20 A

33

- 5

mV/°C

± 100 nA

1

5

0.0105 0.0135

0.0135 0.0165

24 S

846

= 0 V, f = 1 MHz

GS

187

72

= 10 V, ID = 10 A

GS

15.4 23

7.3 11

= 4.5 V, ID = 10 A

GS

2.3

2.2

f = 1 MHz 0.2 0.8 1.6 Ω

15 30

12 24

= 4.5 V, Rg = 1 Ω

GEN

13 26

10 20

918

= 10 V, Rg = 1 Ω

GEN

14 28

816

TC = 25 °C

16

32

GS

= 0 V

0.78 1.2 V

17 34 ns

9.5 19 nC

10

7

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68704

S-81450-Rev. A, 23-Jun-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si7716ADN

Vishay Siliconix

50

40

30

20

- Drain Current (A)I

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS=10thru 5 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.025

0.020

0.015

- On-Resistance (Ω)R

DS(on)

0.010

VGS=4.5V

VGS=10V

VGS=4V

VGS=3V

8

6

4

- Drain Current (A)I

D

2

0

012345

TC= 25 °C

TC= 125 °C

V

- Gate-to-Source Voltage (V)

GS

TC= - 55 °C

Transfer Characteristics

1100

C

880

660

440

C - Capacitance (pF)

220

iss

C

oss

0.005 0 1020304050

On-Resistance vs. Drain Current and Gate Voltage

10

ID=10A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 3.2 6.4 9.6 12.8 16.0

Document Number: 68704 S-81450-Rev. A, 23-Jun-08

ID- Drain Current (A)

VDS=10V

VDS=20V

Qg- Total Gate Charge (nC)

Gate Charge

VDS=15V

C

rss

0

0 5 10 15 20 25 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID=10A

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

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3

New Product

Si7716ADN

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 150 °C

TJ= 25 °C

VSD-Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.4

0.2

0.0

- 0.2

Variance (V)V

GS(th)

- 0.4

- 0.6

ID= 250 µA

ID=5mA

0.06

ID=10A

0.05

0.04

0.03

- On-Resistance (Ω)R

0.02

DS(on)

0.01

0.00 012345678 910

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ=25 °C

On-Resistance vs. Gate-to-Source Voltage

120

96

72

Power (W)

48

24

- 0.8

- 50 - 25 0 25 50 75 100 125 150

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TJ- Temperature (°C)

Threshold Voltage

- Drain Current (A)

D

I

100

10

0.1

0.01

1

0.01

Limited byR

TA= 25 °C

Single Pulse

0.1 1 10

- Drain-to-Source Voltage (V)

V

DS

* V

> minimum VGSat which R

GS

DS(on)

*

Safe Operating Area, Junction-to-Ambient

0

0.1

Time (s)

Single Pulse Power (Junction-to-Ambient)

1ms

10 ms

100 ms

1s 10 s

BVDSS Limited

DS(on)

DC

100

is specified

Document Number: 68704

S-81450-Rev. A, 23-Jun-08

011100.00.01

Vishay Si7716ADN Schematic [ru]