Vishay Si7686DP Schematic

N-Channel 30-V (D-S) MOSFET

C

T

Si7686DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0095 at V

0.014 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

PowerPAK SO-8

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: Si7686DP-T1-E3 (Lead (Pb)-free) Si7686DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

4

a

I

(A)

D

35

G

Qg (Typ.)

9.2 nC

FEATURES

• Halogen-free available

• TrenchFET

• New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile

• Optimized for High-Side Synchronous Rectifier Operation

• 100 % R

APPLICATIONS

• DC/DC Converters

®

Power MOSFET

Tested

g

D

G

S

N-Channel MOSFET

RoHS

®

OMPLIAN

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

= 25 °C

T

C

T

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C TA = 70 °C

Pulsed Drain Current

T

= 25 °C

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy

Maximum Power Dissipation

C

T

= 25 °C

A

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)

d, e

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

± 20

35 35

17.9

14.3

31.5

4.2

30

50

10

V

a

b, c

5

A

mJ

37.9

P

D

T

, T

J

stg

24.2

b, c

5

b, c

3.2

- 55 to 150 260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W.

Document Number: 73451 S-80440-Rev. C, 03-Mar-08

b, f

t ≤ 10 s

R

thJA

R

thJC

21 25

2.8 3.3

°C/W

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1

Si7686DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 30 V, V

DS

= 30 V, V

V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 13.8 A

GS

= 4.5 V, ID = 11.4 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 13.8 A

VDS = 15 V, V

V

= 15 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 13.8 A

GS

= 5 V, ID = 13.8 A

GS

f = 1 MHz 0.8 1.2 Ω

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

I

D

V

≅ 10 A, V

I

D

DD

= 4.5 V, Rg = 1 Ω

GEN

= 15 V, RL = 1.5 Ω

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 2.6 A

IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C

30 V

31.5

- 6

mV/°C

13V

± 100 nA

1

10

µA

50 A

0.0078 0.0095

0.011 0.014

Ω

56 S

1220

230

pFOutput Capacitance

98

17 26

9.2 14

4.1

nC

2.8

20 30

815

13 20

ns

16 25

23 35

815

31.5

50

A

0.8 1.2 V

25 50 ns

15 30 nC

12.5

ns

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Document Number: 73451

S-80440-Rev. C, 03-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si7686DP

Vishay Siliconix

50

40

30

- Drain Current (A)I

20

D

10

0

0.0 0.4 0.8 1.2 1.6 2.0

V

- Drain-to-Source Voltage (V)

DS

VGS = 10 thru 4 V

Output Characteristics

0.0140

0.0120

0.0100

VGS = 4.5 V

3 V

10

8

6

- Drain Current (A)I

4

D

TC = 125 °C

2

25 °C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1500

C

1200

900

iss

- 55 °C

VGS = 10 V

0.0080

- On-Resistance (mΩ)

DS(on)

R

0.0060

0.0040 0 1020304050

I

- Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 13.8 A

8

VDS = 15 V

- Gate-to-Source Voltage (V)

GS

V

6

4

2

0

0 4 8 12 16 20

Qg - Total Gate Charge (nC)

VDS = 21 V

Gate Charge

600

C - Capacitance (pF)

300

0

0 5 10 15 20 25 30

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8

ID = 13.8 A

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

VGS = 10 V

On-Resistance vs. Junction Temperature

VGS = 4.5 V

Document Number: 73451 S-80440-Rev. C, 03-Mar-08

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Vishay Si7686DP Schematic [ru]