VISHAY Si7336DP Technical data

30

36

查询SI7336DP供应商

PRODUCT SUMMARY

V

(V) r

DS

0.00325 @ VGS = 10 V 30

0.0042 @ VGS = 4.5 V 27

DS(on)

N-Channel 30-V (D-S) MOSFET

(W) I

PowerPAK SO-8

(A) Qg (T yp)

D

Si7336DP

Vishay Siliconix

FEATURES

D Ultra-Low On-Resistance Using High Density

TrenchFETr Gen II Power MOSFET Technology

D Qg Optimized
D New Low Thermal Resistance PowerPAKr Package

with Low 1.07-mm Profile

D 100% R

APPLICATIONS

D Low-Side DC/DC Conversion

− Notebook

− Server

− Workstation

D Synchronous Rectifier, POL

Tested

g

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: Si7336DP-T1

S

1

D

5.15 mm

S

2

S

3

G

4

G

N-Channel MOSFET

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current (10 ms Pulse Width) I

Continuous Source Current (Diode Conduction)

Avalanche Current L = 1.0 mH I

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

I

DM

I

AS

DS

GS

D

S

D

stg

30 18

25 15

4.5 1.8

5.4 1.9

3.4 1.2

30

"20

70

50

−55 to 150 _C

V

A

W

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72415
S-41795—Rev. C, 04-Oct-04

Parameter Symbol Typical Maximum Unit

a

t v 10 sec

Steady State

R

thJA

thJC

18 23

50 65

1.0 1.5

www.vishay.com

_C/W

1

Si7336DP

Drain-S

a

W

DS

,

GS

,

p

DS

,

GS

,

D

VDD = 15 V, RL = 15 W

g

ns

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

ource On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

-

a

a

a

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

iss

oss

rss

g

gs

gd

g

r

f

rr

VDS = VGS, I

= 250 mA 1.0 3.0 V

D

VDS = 0 V, VGS = "20 V "100 nA

VDS = 30 V, VGS = 0 V 1

VDS = 30 V, VGS = 0 V, TJ = 55_C 5

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 25 A

30 A

0.0026 0.00325

VGS = 4.5 V, ID = 19 A 0.0033 0.0042

VDS = 15 V, ID = 25 A 110 S

IS = 2.9 A, VGS = 0 V 0.72 1.1 V

5600

V

= 15 V, VGS = 0 V, f = 1 MHz 860 pF

DS

415

36 50

V

= 15 V, VGS = 4.5 V, ID = 20 A 18 nC

DS

10

0.8 1.3 2.0 W

24 35

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

GEN

= 10 V, Rg = 6 W

16 25

90 140

32 50

IF = 2.9 A, di/dt = 100 A/ms 45 70

mA

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

VGS = 10 thru 4 V

3 V

VDS − Drain-to-Source Voltage (V)

− Drain Current (A)I

D

www.vishay.com

2

60

50

40

30

20

10

0

0246810

60

50

40

30

20

− Drain Current (A)I

D

10

TC = 125_C

25_C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

Document Number: 72415

S-41795—Rev. C, 04-Oct-04

−55_C