Vishay Si7326DN Schematic

Vishay Siliconix

N-Channel 30-V (D-S) Fast Switching MOSFET

Si7326DN

PRODUCT SUMMARY

VDS (V) R

30

DS(on)

0.0195 at V

0.030 at V

GS

(Ω)I

= 10 V

GS

= 4.5 V

D

(A)

10

8

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

• New Low Thermal Resistance PowerPAK

®

Power MOSFET

®

Package with Low 1.07 mm Profile

PowerPAK 1212-8

• 100 % R

APPLICATIONS

Tested

g

• DC/DC Conversion

3.30 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: Si7326DN-T1-E3 (Lead (Pb)-free) Si7326DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

3.30 mm

S

2

S

3

G

4

G

N-Channel MOSFET

D

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Single Pulse Avalanche Current

Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

b, c

TA = 25 °C

= 70 °C

T

A

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

, T

T

J

stg

10 6.5

7.5 5.0

2.9 1.2

3.5 1.5

1.9 0.8

30

± 25

40

15

11 mJ

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case (Drain) Steady State

t ≤ 10 s

R

thJA

R

thJC

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 74444 S-83051-Rev. C, 29-Dec-08

28 35

°C/WSteady State 65 81

4.5 6.0

www.vishay.com

1

Si7326DN

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

= 30 V, V

DS

GS

≥ 5 V, V

DS

V

= 10 V, ID = 10 A

GS

V

= 4.5 V, ID = 8 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 10 A

IS = 2.9 A, V

= 15 V, V

DS

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

GEN

= 0 V

GS

= 5 V, ID = 10 A

GS

= 10 V, Rg = 6 Ω

IF = 2.9 A, dI/dt = 100 A/µs

0.8 1.8 V

± 100 nA

1

5

µA

30 A

0.015 0.0195

0.022 0.030

16 S

0.75 1.2 V

8.7 13

1.5

nCGate-Source Charge

3.5

0.5 1.4 2.2 Ω

815

12 20

32 50

14 25

30 60

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

VGS = 10 thru 5 V

35

30

25

20

15

Drain Current (A)I

-

D

10

5

0

www.vishay.com 2

012345

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

4 V

3 V

Drain Current (A)I

-

40

35

30

25

20

15

D

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

TC =

25 °C

Transfer Characteristics

Document Number: 74444

S-83051-Rev. C, 29-Dec-08

125 °C

=

T

C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.040

Si7326DN

Vishay Siliconix

1200

- On-Resistance (Ω)R

DS(on)

Gate-to-Source Voltage (V)

-

V

0.032

0.024

0.016

0.008

0.000 0 5 10 15 20 25 30

VGS = 4.5 V

VGS = 10 V

ID- Drain Current (A)

On-Resistance vs. Drain Current

6

VDS = 15 V I

= 9 A

D

GS

5

4

3

2

1

1000

800

600

C - Capacitance (pF)

400

200

0

1.8

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

C

iss

C

oss

C

rss

048121620

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 10 V I

= 9 A

D

0

0246810

50

10

Source Current (A)I

-

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Source-Drain Diode Forward Voltage

Document Number: 74444 S-83051-Rev. C, 29-Dec-08

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

- Source-to-Drain Voltage (V)

V

SD

TJ = 25 °C

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

0.06

0.05

0.04

ID = 9 A

0.03

- On-Resistance (Ω)R

0.02

DS(on)

0.01

0.00 0246810

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

www.vishay.com

3

Si7326DN

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.4

50

0.2

ID = 250 µA

0.0

- 0.2

Variance (V)V

GS(th)

- 0.4

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

10

1

Drain Current (A)I

-

D

0.1

Limited by R

*

DS(on)

TC = 25 °C

Single Pulse

Power (W)

40

30

20

10

0

0.01

0.1

1

10 100

Time (s)

Single Pulse Power, Junction-to-Ambient

1 ms

10 ms

100 ms

1 s 10 s

DC

600

Thermal Impedance

Normalized Effective Transient

0.01

www.vishay.com 4

0.1

2

1

-4

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

0.1 1 10 100

VDS- Drain-to-Source Voltage (V)

*V

> minimum VGSat which R

GS

DS(on)

is specified

Safe Operating Area, Junction-to-Foot

Notes:

P

DM

t

1

t

2

t

thJA

100

1

t

2

= 65 °C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-3

10

-2

10

-1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 74444

S-83051-Rev. C, 29-Dec-08

Vishay Si7326DN Schematic [ru]