Vishay si4932dy Datasheet

Dual N-Channel 30-V (D-S) MOSFET

Si4932DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.015 at V

30

0.017 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

a, e

I

(A)

D

Qg (Typ.)

8

14.7

• Halogen-free According to IEC 61249-2-21

•TrenchFET® Power MOSFET

• 100 % R

Tested

g

• 100 % UIS Tested

APPLICATIONS

FEATURES

• DC/DC Conversion

• Load Switching

D

2

S

2

N-Channel MOSFET

SO-8

S

1

G

2

1

S

3

2

G

4

2

Top View

Ordering Information: Si4932DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

8

1

D

7

1

D

6

2

D

5

2

D

1

G

1

S

1

N-Channel MOSFET

G

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T TA = 25 °C TA = 70 °C

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

T T

Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy

L = 0.1 mH

T

Maximum Power Dissipation

T T TA = 70 °C

Operating Junction and Storage Temperature Range

= 25 °C

C

= 70 °C

C

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

I

SM

I

AS

E

AS

± 20

b, c, e

8

6.8

1.7

30

8 8

30

2.6

30 20

20

V

e

b, c

A

b, c

mJ

3.2

P

D

T

, T

J

stg

2.1

b, c

2

b, c

1.28

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. e. Package limited.

Document Number: 69012 S-83042-Rev. A, 22-Dec-08

b, d

t ≤ 10 s

R

thJA

R

thJF

47 62.5 28 38

°C/W

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Si4932DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate Threshold Voltage

Gate Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %

V

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

DS

VDS = V

V

DS

V

DS

= 30 V, V

DS

V

, ID = 250 µA

GS

= 0 V, V

GS

= 30 V, V

= 0 V, TJ = 55 °C

GS

= 5 V, V

GS

= 10 V, ID = 7 A

GS

= 4.5 V, ID = 5 A

GS

= 15 V, ID = 7 A

DS

= ± 20 V

= 0 V

GS

= 10 V

N-Channel

V

DS

V

DS

= 15 V, V

= 0 V, f = 1 MHz

GS

= 10 V, ID = 5 A

GS

N-Channel

V

= 15 V, V

DS

= 4.5 V, ID = 5 A

GS

f = 1 MHz 0.2 1.0 2.0 Ω

N-Channel

V

= 15 V, RL = 3 Ω

DD

≅ 5 A, V

I

D

= 4.5 V, Rg = 1 Ω

GEN

N-Channel

V

= 15 V, RL = 3 Ω

DD

≅ 5 A, V

I

D

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 2 A

N-Channel

I

= 5 A, dI/dt = 100 A/µs, TJ = 25 °C

F

30 V

34

- 6

mV/°C

1.2 2.5 V

100 nA

1

10

20 A

0.0122 0.015

0.0138 0.017

40 S

1750

265

115

32 48

14.7 22

5.1

3.7

21 40

10 20

26 50

816

918

816

24 45

816

2.6

30

0.75 1.2 V

23 45 ns

16 32 nC

13

10

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 69012

S-83042-Rev. A, 22-Dec-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4932DY

Vishay Siliconix

30

24

18

12

- Drain Current (A)I

D

6

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS=10thru 4 V

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.016

0.015

VGS=4.5V

0.014

VGS=3V

5

4

3

2

- Drain Current (A)I

D

1

0

012345

TC= 25 °C

TC= 125 °C

TC=- 55 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

2000

1600

1200

C

iss

0.013

- On-Resistance (Ω)R

DS(on)

0.012

0.011 0 6 12 18 24 30

ID- Drain Current (A)

VGS=10V

On-Resistance vs. Drain Current

10

ID=5A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 7 14 21 28 35

VDS=10V

VDS=15V

VDS=20V

Qg- Total Gate Charge (nC)

Gate Charge

800

C - Capacitance (pF)

400

C

rss

0

0.0 2.4 4.8 7.2 9.6 12

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID=7A

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 69012 S-83042-Rev. A, 22-Dec-08

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Vishay si4932dy Datasheet

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