Vishay Si4925BDY Datasheet

Dual P-Channel 30-V (D-S) MOSFET

Si4925BDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

1

1

2

2

0.025 at V

0.041 at V

1

2

3

4

Top View

- 30

S

G

S

G

Ordering Information: Si4925BDY-T1-E3 (Lead (Pb)-free)

Si4925BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

(Ω)I

DS(on)

= - 10 V

GS

= - 4.5 V

GS

SO-8

D

8

1

D

7

1

D

6

2

D

5

2

(A)

D

- 7.1

- 5.5

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

®

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switches

- Notebook PCs

- Desktop PCs

- Game Stations

G

1

P-Channel MOSFET

S

1

G

2

D

1

P-Channel MOSFET

S

2

D

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 7.1 - 5.3

- 5.7 - 4.3

- 1.7 - 0.9

- 30

± 20

- 40

2.0 1.1

1.3 0.7

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 85 110

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

R

thJA

R

thJF

50 62.5

°C/W

30 40

Document Number: 72001
S09-0869-Rev. D, 18-May-09

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1

Si4925BDY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

Total Gate Charge

Gate-Drain Charge

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

V

VDS = - 15 V, V

I

D

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

DS

= - 5 V, V

DS

V

= - 10 V, ID = - 7.1 A

GS

V

= - 4.5 V, ID = - 5.5 A

GS

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 10 V, ID = - 7.1 A

IS = - 1.7 A, V

GS

V

= - 15 V, RL = 15 Ω

DD

≅ - 1 A, V

GEN

= 0 V

GS

= - 10 V, ID = - 7.1 A

= - 10 V, Rg = 6 Ω

IF = - 1.7 A, dI/dt = 100 A/µs

- 1 - 3 V

± 100 nA

- 1

- 25

- 40 A

0.020 0.025

0.033 0.041

20 S

- 0.8 - 1.2 V

33 50

5.4

8.9

915

12 20

60 90

34 50

30 60

µA

Ω

nCGate-Source Charge

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

VGS = 10 V thru 5 V

30

4V

20

- Drain Current (A)I

D

10

3 V, 2 V

0

012345

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

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2

40

TC = - 55 °C

25 °C

30

20

- Drain Current (A)

D

I

10

0

012345

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 72001

S09-0869-Rev. D, 18-May-09

125 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.08

Si4925BDY

Vishay Siliconix

2500

0.06

0.04

VGS = 4.5 V

- On-Resistance (Ω)

DS(on)

0.02

R

0.00
0 10203040

On-Resistance vs. Drain Current

10

VDS = 15 V
I

= 7.1 A

D

8

6

4

- Gate-to-Source Voltage (V)

2

GS

V

I

- Drain Current (A)

D

VGS = 10 V

2000

1500

1000

C - Capacitance (pF)

500

C

rss

0

0 6 12 18 24 30

1.6

VGS = 10 V
I

= 7.1 A

1.4

1.2

- On-Resistance

1.0

DS(on)

R

Normalized

0.8

D

C

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

0

0 5 10 15 20 25 30 35 40

50

10

- Source Current (A)

S

I

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

SD

Source-Drain Diode Forward Voltage

Document Number: 72001
S09-0869-Rev. D, 18-May-09

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

TJ = 25 °C

- Source-to-Drain Voltage (V)

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.08

0.06

ID = 3 A

0.04

ID = 7.1 A

- On-Resistance (Ω)

DS(on)

0.02

R

0.00
0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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