Vishay Si4914DY Schematic

Si4914DY

e

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

VDS (V) r

Channel-1

30

Channel-2

0.023 at V

0.032 at V

0.020 at V

0.027 at V

SCHOTTKY PRODUCT SUMMARY

(V)

V

VDS (V)

Diode Forward Voltage

30 0.40 V at 1.0 A 2.0

D

1

D

2

1

G

3

2

S

4

2

Ordering Information:

SD

SO-8

Top View

Si4914DY-T1-E3 (Lead (Pb)-free)

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

= 10 V

GS

= 4.5 V

GS

G

8

1

S1/D

7

6

5

S1/D

2

New Product

(A)

D

7.0

5.6

7.4

6.4

(A)

I

F

Vishay Siliconix

FEATURES

• LITTLE FOOT® Plus Integrated Schottky

• 100 % R

APPLICATIONS

• Logic DC/DC

- Notebook PC

G

N-Channel 1

MOSFET

G

N-Channel 2

MOSFET

Tested

g

D

1

S1/D

2

S

2

Schottky Diod

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol

Drain-Source Voltage

Gate-Source Voltage

TA = 25 °C

Continuous Drain Current (T

= 150 °C)

J

a

= 70 °C

T

A

Pulsed Drain Current

Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current

Avalanche Energy

Maximum Power Dissipation

a

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

, T

T

J

stg

Channel-1 Channel-2

10 sec Steady State 10 sec Steady State

30

20

7.0 5.5 7.4 5.7

5.64.364.5

40 40

1.7 1.0 1.8 0.95

13 15

8.45 11 mJ

1.9 1.1 2.0 1.16

1.2 0.71 1.3 0.74

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 10 sec

Steady State 90 112 85 107

R

thJA

R

thJF

Notes: a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 72938 S-61959-Rev. C, 09-Oct-06

Channel-1 Channel-2

Typ Max Typ Max

52 65 47 60

30 38 28 35

Unit

V

A

W

Unit

°C/W

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Si4914DY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

V

GS(th)

I

GSS

I

DSS

V

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

Total Gate Charge

I

V

D(on)

b

r

DS(on)

g

fs

V

SD

Q

g

V

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Q

R

t

d(on)

t

d(off)

t

gs

V

gd

g

t

r

t

f

rr

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 30 V, V

DS

= 5 V, V

DS

V

= 10 V, ID = 7.0 A

GS

= 10 V, ID = 7.4 A

V

GS

V

= 4.5 V, ID = 5.6 A

GS

V

= 4.5 V, ID = 6.4 A

GS

= 0 V, TJ = 85 °C

GS

= 10 V

GS

VDS = 15 V, ID = 7.0 A V

= 15 V, ID = 7.4 A

DS

IS = 1.7 A, V

I

= 1 A, V

S

GS

= 0 V

Channel-1

= 15 V, V

DS

= 4.5 V, ID = 7.0 A

GS

Channel-2

= 15 V, V

DS

= 4.5 V, ID = 7.4 A

GS

Channel-1

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

= 10 V, Rg = 6 Ω

GEN

Channel-2

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

= 10 V, Rg = 6 Ω

GEN

IF = 1.3 A, di/dt = 100 A/µs

I

= 2.2 A, di/dt = 100 µA/µs

F

= 0 V

Ch-1 1.0 2.5 Ch-2 1.0 2.5 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 500 Ch-1 0.015 Ch-2 20 Ch-1 20 Ch-2 20 Ch-1 0.019 0.023 Ch-2 0.016 0.020 Ch-1 0.026 0.032 Ch-2 0.022 0.027 Ch-1 19 Ch-2 22 Ch-1 0.75 1.1 Ch-2 0.36 0.40

Ch-1 5.6 8.5 Ch-2 7.3 11 Ch-1 2.3 Ch-2 2.8 Ch-1 1.7 Ch-2 2.2 Ch-1 0.5 2.3 3.6 Ch-2 0.5 1.6 2.5 Ch-1 6 10 Ch-2 7 11 Ch-1 13 20 Ch-2 13 20 Ch-1 27 40 Ch-2 35 53 Ch-1 9 15 Ch-2 10 15 Ch-1 30 50 Ch-2 30 50

Typ

a

Max Unit

V

nA

µA

mA

A

Ω

S

V

nC

Ω

ns

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Forward Voltage Drop

V

F

IF = 1.0 A

I

= 1.0 A, TJ = 150 °C

F

Vr = 30 V

Maximum Reverse Leakage Current

Junction Capacitance

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

I

rm

C

T

V

= 30 V, TJ = 100 °C

r

= - 30 V, TJ = 125 °C

V

r

Vr = 10 V

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0.36 0.40

0.27 0.31

0.008 0.50

3.5 10 10 100 58 pF

Document Number: 72938

S-61959-Rev. C, 09-Oct-06

V

mA

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted

Si4914DY

Vishay Siliconix

40

35

30

25

20

15

– Drain Current (A)I

D

10

5

0

012345

VGS = 10 thru 4 V

V

– Drain-to-Source Voltage (V)

DS

Output Characteristics

0.05

0.04

– On-Resistance (Ω)

DS(on)

r

0.03

0.02

0.01

VGS = 4.5 V

VGS = 10 V

3 V

40

32

24

16

– Drain Current (A)I

D

8

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

TC = 125 °C

25 °C

V

– Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1000

C

800

600

400

C – Capacitance (pF)

200

C

iss

C

oss

rss

- 55 °C

0.00 0 5 10 15 20 25 30 35 40

On-Resistance vs. Drain Current

6

VDS = 15 V I

= 7 A

D

5

4

3

2

– Gate-to-Source Voltage (V)

GS

V

1

0

0.0 1.5 3.0 4.5 6.0 7.5

Document Number: 72938 S-61959-Rev. C, 09-Oct-06

ID – Drain Current (A)

Qg – Total Gate Charge (nC)

Gate Charge

0

0 5 10 15 20 25 30

1.8

1.6

1.4

1.2

– On-Resistance

(Normalized)

1.0

DS(on)

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VDS – Drain-to-Source Voltage (V)

Capacitance

VGS = 10 V I

= 7 A

D

– Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay Si4914DY Schematic [ru]