Vishay si4914bd Datasheet

Si4914BDY

e

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

Channel-1

Channel-2

VDS (V) R

0.021 at V

0.027 at V

30

0.020 at V

0.025 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

= 10 V

= 4.5 V

I

(A)

D

8.4

7.4

d

8

d

8

SCHOTTKY PRODUCT SUMMARY

(V)

V

VDS (V)

Diode Forward Voltage

SD

a

Qg (Typ.)

I

F

6.7

7.0

(A)

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• LITTLE FOOT

• 100 % R

®

Plus Integrated Schottky

and UIS Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Notebook PC

- System Power dc-to-dc

D

1

30 0.50 V at 1.0 A 2.0

SO-8

D

1

D

2

1

G

3

2

S

4

2

T op V i e w

Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

8

1

S 1 /D

7

6

5

S 1 /D

2

G

1

N-Channel 1

MOSFET

G

2

N-Channel 2

MOSFET

S1/D

2

Schottky Diod

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Channel-1 Channel-2 Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

PulseD Source-Drain Current

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. Package limited.

Document Number: 69654 S09-2109-Rev. E, 12-Oct-09

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

= 25 °C

T

A

L = 0.1 mH

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

8.4

I

D

6.7 7.4

6.7

5.3

I

DM

I

S

I

SM

I

AS

E

AS

40 40

2.4 2.8

1.0

40 40

2.7 3.1

P

D

1.7 2.0

1.7

1.1

, T

T

J

stg

30

20

d

8

b, c

7.4

5.7

1.1

b, c

15

11.2 mJ

b, c

2.0

1.2

b, c

- 55 to 150 °C

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V

A

W

1

Si4914BDY

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2

Parameter

Maximum Junction-to-Ambient

a

t ≤ 10 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

Static

Drain-Source Breakdown Voltage

Temperature Coefficient ΔVDS/T

V

DS

V

Temperature Coefficient ΔV

GS(th)

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

V

I

V

D(on)

b

R

DS(on)

g

fs

V

SD

Q

g

V

Q

gs

V

Q

gd

R

g

Symbol

R

thJA

R

thJF

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 30 V, V

DS

= 30 V, V

DS

V

GS

V

GS

= 0 V, TJ = 85 °C

GS

= 5 V, V

GS

= 10 V, ID = 8 A

GS

= 10 V, ID = 8 A

GS

= 4.5 V, ID = 6 A

VDS = 15 V, ID = 8 A

V

= 15 V, ID = 8 A

DS

IS = 1.7 A, V

I

= 1 A, V

S

GS

Channel-1

= 15 V, V

DS

= 4.5 V, ID = 8 A

GS

Channel-2

= 15 V, V

DS

= 4.5 V, ID = 8 A

GS

59 70 52 62.5

36 45 32 40

Ch-1 30

Ch-2 30

Ch-1 35 mV/°C

Ch-1 - 6.2

Ch-1 1.2 2.7

Ch-2 1.2 2.7

Ch-1 100

Ch-2 100

GS

= 0 V

Ch-1 1

Ch-2 100

Ch-1 15

Ch-2 10000

= 10 V

Ch-1 20

Ch-2 20

Ch-1 0.0165 0.021

Ch-2 0.0155 0.020

Ch-1 0.0215 0.027

Ch-2 0.020 0.025

Ch-1 29

Ch-2 33

= 0 V

Ch-1 0.77 1.1

Ch-2 0.46 0.5

Ch-1 6.7 10.5

Ch-2 7.0 11.0

Ch-1 2.8

Ch-2 2.8

Ch-1 2.0

Ch-2 2.0

Ch-1 2.9 6.0

Ch-2 2.0 4.0

a

Max. Unit

Unit Typ. Max. Typ. Max.

°C/W

V

nA

µA

A

Ω

S

V

nC

Ω

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

Dynamic

Tu r n - O n D el a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

a

t

d(on)

t

d(off)

Q

t

r

≅ 5 A, V

I

D

I

≅ 5 A, V

t

f

t

rr

D

Channel-1

V

= 15 V, RL = 3 Ω

DD

= 10 V, Rg = 1 Ω

GEN

Channel-2

V

= 15 V, RL = 3 Ω

DD

= 10 V, Rg = 1 Ω

GEN

IF = 2.2 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 A/µs

F

IF = 2.2 A, dI/dt = 100 A/µs

rr

t

a

t

b

I

= 2.2 A, dI/dt = 100 A/µs

F

IF = 2.2 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 A/µs

F

IF = 2.2 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 A/µs

F

Ch-1 9 18

Ch-2 10 20

Ch-1 10 20

Ch-2 9 18

Ch-1 16 32

Ch-2 16 32

Ch-1 9 18

Ch-2 8 16

Ch-1 35 55

Ch-2 21 35

Ch-1 40

Ch-2 11

Ch-1 19

Ch-2 11

Ch-1 16

Ch-2 10

Si4914BDY

Vishay Siliconix

a

Max. Unit

ns

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and fun ctional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Document Number: 69654 S09-2109-Rev. E, 12-Oct-09

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3

Si4914BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

40

30

20

- Drain Current (A)I

D

10

0

00.51.01.52.02.5

VDS- Drain-to-Source Voltage (V)

VGS=10V thru 5 V

4 V

3 V

Output Characteristics

0.05

0.04

0.03

VGS=4.5V

2.0

1.6

1.2

TC= 25 °C

0.8

- Drain Current (A)I

D

0.4

0

TC= 125 °C

TJ= - 55 °C

012345

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

1000

C

800

600

iss

0.02

- On-Resistance (Ω)R

DS(on)

0.01

0

0 1020304050

ID- Drain Current (A)

VGS=10V

On-Resistance vs. Drain Current

10

ID= 8 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 3.2 6.4 9.6 12.8 16.0

VDS=15V

Qg- Total Gate Charge (nC)

VDS=10V

VDS=20V

Gate Charge

400

C - Capacitance (pF)

200

C

rss

0

0 6 12 18 24 30

1.7

ID=7A

1.5

1.3

- On-Resistance

1.1

(Normalized)

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

VGS=10V

VGS=4.5V

TJ- Junction Temperature (°C)

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.10

Si4914BDY

Vishay Siliconix

10

1

0.1

- Source Current (A)I

S

0.01

0.001 0 0.2 0.4 0.6 0.8 1.0 1.2

VSD- Source-to-Drain Voltage (V)

TJ= 150 °C

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.5

ID= 250 µA

0.2

ID=5mA

- 0.1

Variance (V)V

- 0.4

GS(th)

- On-Resistance (Ω)R

DS(on)

Power (W)

0.08

0.06

0.04

TA= 125 °C

0.02

TA= 25 °C

0

02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

80

60

40

- 0.7

- 1.0

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

Single Pulse

0.01

0.1 1 10 100

* V

*

DS(on)

TA=25 °C

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

Safe Operating Area

20

0

0.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1s 10 s DC

is specified

DS(on)

011100.00.01

Document Number: 69654 S09-2109-Rev. E, 12-Oct-09

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Vishay si4914bd Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual