VISHAY Si4862DY Technical data

Si4862DY

16

PRODUCT SUMMARY

V

(V)

DS

r

DS(on)

0.0033 @ VGS = 4.5 V 25

0.0055 @ VGS = 2.5 V 20

SD

1

SD

2

SD

3

GD

4

New Product

N-Channel 16-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 2.5-V Rated
D Low 3.3-mW r

(W)

SO-8

I

(A)

D

8
7
6
5

D Low Gate Resistance
D 100% R

G

APPLICATIONS

D Synchronous Rectification
D Low Output Voltage Synchronous Rectification

D

G

Tested

Vishay Siliconix

DS(on)

Top View

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C
TA = 70_C

TA = 25_C
TA = 70_C

I

P

I

DM

I

DS
GS

D

25 17
20 13

S

D

stg

2.9 1.3

3.5 1.6

2.2 1

16

"8

60

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJF

29 35
67 80
13 16

V

A

W

_C

_C/W

Document Number: 71439
S-03662—Rev. B, 14-Apr-03

www.vishay.com

1

Si4862DY

Drain-Source On-State Resistance

a

W

VDD = 6 V, RL = 6 W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

-

a

a

a

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g
gs
gd

g

r

f
rr

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

VDS = VGS, I
VDS = 0 V, VGS = "8 V "100

VDS = 12.8 V, VGS = 0 V 1

VDS = 12.8 V, VGS = 0 V, TJ = 55_C

VDS w 5 V , V

V

GS

VGS = 2.5 V, ID = 20 A 0.0045 0.0055

VDS = 6 V, ID = 25 A 140 S

IS = 2.9 A, VGS = 0 V 0.75 1.1 V

V

= 6 V, VGS = 4.5 V, ID = 25 A

DS

VDD = 6 V, RL = 6 W

ID ^ 1 A, V

IF = 2.9 A, di/dt = 100 A/ms

D

= 4.5 V, I

= 4.5 V, RG = 6 W

GEN

= 250 mA

= 4.5 V

GS

= 25 A

D

0.6 V

5

30 A

0.0027 0.0033

48 70

11.8

8.9

0.5 1.3 2.2
42 60
38 60

120 180

50 75
80 120

nA

mA

nC

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

60

50

40

30

20

- Drain Current (A)I

D

10

0

012345

www.vishay.com

2

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

VDS - Drain-to-Source Voltage (V)

2 V

60

50

40

30

TC = 125_C

20

- Drain Current (A)I

D

10

25_C

0

0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)

Document Number: 71439

S-03662—Rev. B, 14-Apr-03

-55_C