Vishay Si4835BDY Schematic [ru]

P-Channel 30-V (D-S) MOSFET

30

Conti

t (TJ = 150_C)

a

I

A

C/W

Si4835BDY

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

−

−

0.018 @ VGS = −10 V

0.030 @ VGS = −4.5 V −7.5

Ordering Information: Si4835BDY

(W) I

DS(on)

SD

1

S

2

SD

3

G

4

(A) Qg (T yp)

D

−9.6

−25

SO-8

8

D

7

6

D

5

Top View

Si4835BDY-T1 (with Tape and Reel)
Si4835BDY—E3 (Lead (Pb)-Free)
Si4835BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

FEATURES

D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
D 100% Rg Tested

APPLICATIONS

D Load Switches

− Notebook PCs

− Desktop PCs

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

−9.6

−7.7 −5.9

−2.1 −1.3

2.5 1.5

1.6 0.9

−30

"25

−50

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJF

39 50

70 85

18 22

V

−7.4

W

_C/W

Document Number: 72029
S-41912—Rev. D, 25-Oct-04

www.vishay.com

1

Si4835BDY

VDD = −15 V, RL = 15 W

g

ns

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

gs

gd

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

d(on)

r

d(off)

f

rr

g

g

VDS = VGS, I

= −250 mA −1.0 −3.0 V

D

VDS = 0 V, VGS = "25 V "100 nA

VDS = −30 V, VGS = 0 V −1

VDS = −30 V, VGS = 0 V, TJ = 55_C −5

VDS v −5 V, VGS = −10 V −50 A

VGS = −10 V, ID = −9.6 A 0.014 0.018

VGS = −4.5 V, ID = −7.5 A 0.023 0.030

VDS = −15 V, ID = −9.6 A

30 S

IS = −2.1 A, VGS = 0 V −0.8 −1.2 V

37

V

= −15 V, VGS = −5 V, ID = −9.6 A

DS

25

6.5

12.5

1.0 2.9 4.9 W

15 25

VDD = −15 V, RL = 15 W

ID ^ −1 A, V

GEN

= −10 V, Rg = 6 W

13 20

60 100

45 70

IF = −2.1 A, di/dt = 100 A/ms 45 80

mA

W

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

50

40

30

20

− Drain Current (A)I

D

10

0

0123456

www.vishay.com

2

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

4 V

3 V

VDS − Drain-to-Source Voltage (V)

50

TC = −55_C

40

25_C

125_C

30

20

− Drain Current (A)I

D

10

0

012345

VGS − Gate-to-Source Voltage (V)

Document Number: 72029

S-41912—Rev. D, 25-Oct-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4835BDY

Vishay Siliconix

W )

− On-Resistance (r

DS(on)

On-Resistance vs. Drain Current

0.05

0.04

0.03

0.02

0.01

0.00

VGS = 4.5 V

VGS = 10 V

0 1020304050

− Drain Current (A)

I

D

Gate Charge

10

VDS = 15 V
I

= 9.6 A

D

8

6

3200

2400

1600

C − Capacitance (pF)

800

C

0

0 6 12 18 24 30

On-Resistance vs. Junction Temperature

1.6

VGS = 10 V
I

1.4

1.2

Capacitance

C

oss

rss

VDS − Drain-to-Source Voltage (V)

= 9.6 A

D

C

iss

4

− Gate-to-Source Voltage (V)

GS

2

V

0

0 1020304050

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

60

TJ = 150_C

10

− Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

TJ = 25_C

− On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

0.6

−50 −25 0 25 50 75 100 125 150

0.05

0.04

W )

0.03

0.02

− On-Resistance (r

DS(on)

0.01

0.00
0246810

T

− Junction Temperature (_C)

J

ID = 9.6 A

Document Number: 72029
S-41912—Rev. D, 25-Oct-04

www.vishay.com

3