Vishay Si4816DY Schematic

Si4816DY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

Channel-1

Channel-2

VDS (V) R

0.022 at V

30

0.030 at V

0.013 at V

0.0185 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

= 10 V

GS

= 4.5 V

GS

SCHOTTKY PRODUCT SUMMARY

V

(V)

VDS (V)

Diode Forward Voltage

30 0.50 V at 1.0 A 2.0

G

1

A/S

2

A/S

3

2

G

4

2

Ordering Information: Si4816DY-T1-E3 (Lead (Pb)-free)

Si4816DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

SD

SO-8

Top View

D

8

1

D 2 /S

7

D 2 /S

6

D 2 /S

5

FEATURES

(A)

D

6.3

5.4

10

8.6

(A)

I

F

1

• Halogen-free According to IEC 61249-2-21

Definition

• LITTLE FOOT

• 100 % R

®

Plus Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

D

1

G

1

N-Channel 1

MOSFET

G

2

N-Channel 2

MOSFET

S

2

Schottky Diode

A

S1/D

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Channel-1 Channel-2

Parameter Symbol

Drain-Source Voltage

Gate-Source Voltage

TA = 25 °C

Continuous Drain Current (T

= 150 °C)

J

a

T

= 70 °C

A

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

b

a

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

10 s Steady State 10 s Steady State

30

20

6.3 5.3 10 7.7

5.4 4.2 8.2 6.2

30 40

1.3 0.9 2.2 1.15

12 25

7.2 31.25 mJ

1.4 1.0 2.4 1.25

0.9 0.64 1.5 0.8

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2 Schottky

Parameter Symbol

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 10 s

Steady State 100 125 82 100 80 100

R

thJA

R

thJC

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Starting date code W46BAA.

Typ. Max. Typ. Max. Typ. Max.

72 90 43 53 48 60

51 63 25 30 28 35

Unit

V

A

W

Unit

°C/W

Document Number: 71121 S09-0868-Rev. G, 18-May-09

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1

Si4816DY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n-On D e l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

b

R

DS(on)

g

V

Q

R

t

d(on)

t

d(off)

V

DS

V

fs

SD

g

V

DS

gs

V

gd

g

DS

t

r

≅ 1 A, V

I

D

I

t

f

t

rr

≅ 1 A, V

D

I

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 30 V, V

DS

= 30 V, V

GS

= 5 V, V

DS

V

= 10 V, ID = 6.3 A

GS

V

= 10 V, ID = 10 A

GS

= 4.5 V, ID = 5.4 A

V

GS

= 4.5 V, ID = 8.6 A

V

GS

V

= 15 V, ID = 6.3 A

DS

= 15 V, ID = 10 A

V

DS

IS = 1.3 A V, V

= 1 A V, V

I

S

= 0 V

GS

= 0 V, TJ = 85 °C

= 10 V

GS

= 0 V

GS

= 0 V

GS

Channel-1

= 15 V, V

= 5 V, ID = 6.3 A

GS

Channel-2

= 15 V, V

= 5 V, ID = - 10 A

GS

Channel-1

V

= 15 V, RL = 15 Ω

DD

= 10 V, Rg = 6 Ω

GEN

Channel-2

V

= 15 V, RL = 15 Ω

DD

= 10 V, Rg = 6 Ω

GEN

IF = 1.3 A, dI/dt = 100 A/µs

= 2.2 A, dI/dt = 100 µA/µs

F

Ch-1 0.8 2 Ch-2 1.0 3 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 2000 Ch-1 20 Ch-2 30 Ch-1 0.018 0.022 Ch-2 0.0105 0.013 Ch-1 0.024 0.030 Ch-2 0.015 0.0185 Ch-1 17 Ch-2 28 Ch-1 0.7 1.1 Ch-2 0.47 0.5

Ch-1 8.0 12 Ch-2 15 23 Ch-1 1.75 Ch-2 5.3 Ch-1 3.2 Ch-2 4.6 Ch-1 1.5 6.1 Ch-2 0.5 2.6 Ch-1 10 20 Ch-2 15 30 Ch-1 5 10 Ch-2 5 10 Ch-1 26 50 Ch-2 44 80 Ch-1 8 16 Ch-2 12 24 Ch-1 30 60 Ch-2 32 70

Typ .

a

Max. Unit

V

nA

µA

A

Ω

S

V

nC

Ω

ns

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward Voltage Drop

V

F

IF = 1.0 A

= 1.0 A, TJ = 125 °C

I

F

VR = 30 V

= 30 V, TJ = 100 °C

Maximum Reverse Leakage Current

Junction Capacitance C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

I

rm

T

V

R

= - 30 V, TJ = 125 °C

V

R

VR = 10 V

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0.47 0.50

0.36 0.42

V

0.004 0.100

0.7 10

mA

3.0 20 50 pF

Document Number: 71121

S09-0868-Rev. G, 18-May-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30

Si4816DY

Vishay Siliconix

V

= 10 V thru 4 V

GS

24

) A ( t n e r r u C n i a r D - I

18

12

D

6

0

02468 10

- Drain-to-Source Voltage (V)

V

DS

1 V

3 V

2 V

Output Characteristics

0.030

0.024

(Ω) ecnats

0.018

is eR-nO

-

)no(SD

0.012

V

GS

= 4.5 V

V

GS

= 10 V

30

24

)A( tnerruC niarD -I

18

12

D

6

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

TC = 125 °C

25 °C

V

- Gate-to-Source Voltage (V)

GS

- 55 °C

Transfer Characteristics

1000

800

)Fp( ecnatic

600

a paC - C

400

C

iss

C

oss

R

0.006

0.000 0 8 16 24 32 40

ID - Drain Current (A)

On-Resistance vs. Drain Current

10

V

= 15 V ) V

( e

g a

t

l o V

e c

r u o S -

o

t

e

t a

G

-

SG

V

DS

= 6.3 A

I

D

8

6

4

2

0

0 3 6 9 12 15

Q g - Total Gate Charge (nC)

Gate Charge

200

C

rss

0

061218 24 30

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8

V

= 10 V

GS

= 6.3 A

I

1.6

e c

1.4 n a

t

)

s i s

d ez

e

1.2

i

l

R

-

a

n O

mroN(

-

1.0

) no

( S D

0.8 R

0.6

0.4

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

Document Number: 71121 S09-0868-Rev. G, 18-May-09

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Si4816DY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

) A ( t n e r r u C e c r u o S - I

T J = 150 °C

10

0.05

0.04

(Ω) ecnatsiseR-nO -

0.03

ID = 10 A

TJ = 25 °C

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

- Source-to-Drain Voltage (V)

SD

Source-Drain Diode Forward Voltage

0.6

0.4

0.2

)V( ecnai

0.0

r a

- 0.2

VV

)ht(SG

ID = 250 µA

- 0.4

- 0.6

- 0.8

- 1.0

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0.02

)no(SD

R

0.01

0.00

02468 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

80

)W( r

60

ewo

40

P

20

0

0.001

0.01

1

100.1

Time (s)

Single Pulse Power, Junction-to-Ambient

t n e

i s

e

n

c

a

n

r T

a d e

e v i t c e

p m

I l a

f

f E

m r e h T

d e z i l a

m r o N

0.01

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2

1

0.1

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

1 10 600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

2

t

DM Z thJA

1

t

2

= 100 °C/W

thJA

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

- T A = P

3. T

JM

4. Surface Mounted

100

Document Number: 71121

S09-0868-Rev. G, 18-May-09

Vishay Si4816DY Schematic [ru]