Vishay Si4816BDY Schematic

Si4816BDY

e

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

Channel-1

Channel-2

VDS (V) R

0.0185 at V

0.0225 at V

30

0.0115 at V

0.016 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

= 10 V

GS

= 4.5 V

GS

SCHOTTKY PRODUCT SUMMARY

V

(V)

VDS (V)

Diode Forward Voltage

30 0.50 V at 1.0 A 2.0

G

1

A/S

2

A/S

3

2

G

4

2

Ordering Information:

Si4816BDY-T1-E3 (Lead (Pb)-free) Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

SD

SO-8

Top View

D

8

1

D2/S

7

D2/S

6

D2/S

5

(A) Qg (Typ.)

D

6.8

6.0

11.4

9.5

1

7.8

11.6

(A)

I

F

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• LITTLE FOOT

• 100 % R

®

Plus Power MOSFET

Tested

g

D

G

1

N-Channel 1

MOSFET

G

2

N-Channel 2

MOSFET

1

S1/D

2

Schottky Diod

S

A

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Channel-1 Channel-2

Parameter

Drain-Source Voltage

Gate-Source Voltage

TA = 25 °C

Continuous Drain Current (T

= 150 °C)

J

a

= 70 °C

T

A

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Pulse Avalanche Current

Avalanche Energy

Maximum Power Dissipation

a

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

Operating Junction and Storage Temperature Range

Symbol

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

6.8 5.8 11.4 8.2

5.5 4.6 9.0 6.5

30 40

1 0.9 2.2 1.15

10 20

1.4 1.0 2.4 1.25

0.9 0.64 1.5 0.8

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2 Schottky

Parameter

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 100 125 82 100 80 100

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 73026 S09-0394-Rev. D, 09-Mar-09

Symbol

R

thJA

R

thJF

72 90 43 53 48 60

51 63 25 30 28 35

Unit 10 s Steady State 10 s Steady State

30

20

V

A

520mJ

W

- 55 to 150 °C

Unit Typ. Max. Typ. Max. Typ. Max.

°C/W

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Si4816BDY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

b

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

V

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 30 V, V

V

DS

= 30 V, V

= 5 V, V

DS

V

= 10 V, ID = 6.8 A

GS

V

= 10 V, ID = 11.4 A

GS

V

= 4.5 V, ID = 6.0 A

GS

V

= 4.5 V, ID = 9.5 A

GS

= 0 V, TJ = 85 °C

GS

VDS = 15 V, ID = 6.8 A

V

= 15 V, ID = 11.4 A

DS

IS = 1 A, V

I

S

= 1 A, V

GS

Channel-1

V

= 15 V, V

DS

= 5 V, ID = 6.8 A

GS

Channel-2

= 15 V, V

DS

= 5 V, ID = - 11.4 A

GS

Channel-1

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

= 10 V, Rg = 6 Ω

GEN

Channel-2

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

= 10 V, Rg = 6 Ω

GEN

IF = 1.3 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 µA/µs

F

= 0 V

= 10 V

= 0 V

Ch-1 1.0 3.0

Ch-2 1.0 3.0

Ch-1 100

Ch-2 100

Ch-1 1

Ch-2 100

Ch-1 15

Ch-2 2000

Ch-1 20

Ch-2 30

Ch-1 0.0155 0.0185

Ch-2 0.0093 0.0115

Ch-1 0.0185 0.0225

Ch-2 0.013 0.016

Ch-1 30

Ch-2 31

Ch-1 0.73 1.1

Ch-2 0.47 0.5

Ch-1 7.8 10

Ch-2 11.6 18

Ch-1 2.9

Ch-2 4.8

Ch-1 2.3

Ch-2 3.7

Ch-1 1.5 3.0 4.5

Ch-2 0.9 1.8 2.7

Ch-1 11 17

Ch-2 13 20

Ch-1 9 15

Ch-2 9 15

Ch-1 24 40

Ch-2 31 50

Ch-1 9 15

Ch-2 11 17

Ch-1 20 35

Ch-2 25 40

Typ .

a

Max. Unit

V

nA

µA

A

Ω

S

V

nC

Ω

ns

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Document Number: 73026

S09-0394-Rev. D, 09-Mar-09

Si4816BDY

Vishay Siliconix

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward Voltage Drop

V

F

IF = 1.0 A

I

= 1.0 A, TJ = 125 °C

F

VR = 30 V

Maximum Reverse Leakage Current

Junction Capacitance

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and fun ctional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

I

rm

C

T

= 30 V, TJ = 100 °C

V

R

V

= - 30 V, TJ = 125 °C

R

VR = 10 V

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.47 0.50

0.36 0.42

0.004 0.100

0.7 10

3.0 20

50 pF

V

mA

– Drain Current (A)I

D

– On-Resistance (Ω)

DS(on)

R

40

35

30

25

20

15

10

5

0

012345

VGS = 10 thru 4 V

3 V

– Drain-to-Source Voltage (V)

V

DS

2 V

Output Characteristics

0.05

0.04

0.03

VGS = 4.5 V

0.02

VGS = 10 V

0.01

40

35

30

25

20

15

– Drain Current (A)I

D

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

1200

1000

800

600

C – Capacitance (pF)

400

200

TC = 125 °C

25 °C

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

C

oss

C

rss

- 55 °C

C

iss

0.00 0 5 10 15 20 25 30 35 40

On-Resistance vs. Drain Current

Document Number: 73026 S09-0394-Rev. D, 09-Mar-09

ID – Drain Current (A)

0

0 5 10 15 20 25 30

VDS – Drain-to-Source Voltage (V)

Capacitance

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Si4816BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

6

VDS = 15 V I

= 6.8 A

5

4

3

2

– Gate-to-Source Voltage (V)

GS

V

1

0

D

0246810

Qg – Total Gate Charge (nC)

Gate Charge

40

TJ = 150 °C

10

1.6

1.4

1.2

1.0

– On-Resistance

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

0.05

0.04

0.03

VGS = 10 V I

= 6.8 A

D

– Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

ID = 6.8 A

TJ = 25 °C

– Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.4

0.2

0.0

Variance (V)V

- 0.2

GS(th)

- 0.4

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ – Temperature (°C)

ID = 250 µA

Threshold Voltage

– On-Resistance (Ω)

DS(on)

R

Power (W)

0.02

0.01

0.00 0246810

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

80

60

40

20

0

0.001

0.01

Time (s)

1

Single Pulse Power, Junction-to-Ambient

10 0.1

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Document Number: 73026

S09-0394-Rev. D, 09-Mar-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

Limited by R

10

DS(on)

*

I

DM

Limited

1 ms

Si4816BDY

Vishay Siliconix

0.1

Thermal Impedance

Normalized Effective Transient

0.01

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

4

-

10

I

D(on)

1

Limited

– Drain Current (A)I

D

0.1

TC = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 ms

1 s 10 s

DC

0.01

0.1 1 10 100 –> Drain-to-Source Voltage (V)

V

* V

DS

minimum VGS at which R

GS

DS(on)

is specified

Safe Operating Area

Notes:

P

DM

t

1

t

2

t

thJA

100

thJA

1

t

2

(t)

= 100 °C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-

3

10

-

2

10

-

1

10

1 10 600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

Single Pulse

0.01

-

4

10

Document Number: 73026 S09-0394-Rev. D, 09-Mar-09

-

3

10

-

2

10

-

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

11010

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Vishay Si4816BDY Schematic [ru]