Vishay Si4810DY Schematic [ru]
N-Channel 30-V (D-S) MOSFET with Schottky Diode
V
Conti
t (TJ = 150_C) (MOSFET)
a
b
I
A
b
b
MOSFET PRODUCT SUMMARY
V
(V) r
DS
30
0.0135 @ VGS = 10 V 10
0.020 @ VGS = 4.5 V 8
SCHOTTKY PRODUCT SUMMARY
V
(V)
DS
30 0.53 V @ 3.0 A 4.0
Diode Forward Voltage
SD
1
S
2
SD
3
G
4
Top View
(W) I
DS(on)
VSD (V)
SO-8
8
D
7
6
5
Ordering Information:
Si4810DY
Si4810DY-T1 (with Tape and Reel)
D
Si4810DY
Vishay Siliconix
(A)
D
I
(A)
F
DD
G
N-Channel MOSFET
D
Schottky Diode
SDS
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET) V
a,
b
=
nuous Drain Curren
Pulsed Drain Current (MOSFET) I
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky) I
Pulsed Foward Current (Schottky) I
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range TJ, T
_
a,
a,
,
a, b
TA = 25_C
TA = 70_C
TA = 25_C 2.5
TA = 70_C
TA = 25_C
TA = 70_C 1.3
V
DS
GS
D
DM
I
S
F
FM
P
D
stg
-55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (t v 10 sec)
Maximum Junction-to-Ambient (t = steady state)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
a
a
MOSFET 50
Schottky
MOSFET
Schottky 80
R
thJA
70
30
30
"20
10
8
50
2.3
4.0
50
1.6
2.0
V
W
60
_C/W
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-1
Si4810DY
(
y)
(MOSFET + Schottky)
DSS
VDD = 15 V, RL = 15 W
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current
MOSFET + Schottk
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Schottky Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
GS(th)
GSS
I
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
g
r
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= 250 mA 1 V
D
"100 nA
VDS = 30 V, VGS = 0 V 0.007 0.100
VDS = 30 V, VGS = 0 V, TJ = 100_C 1.5 10
VDS = 30 V, VGS = 0 V, TJ = 125_C 6.5 20
VDS w 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 10 A 0.0105 0.0135
VGS = 4.5 V, I
= 5 A
D
0.0155 0.020
VDS = 15 V, ID = 10 A 28 S
IS = 3.0 A, VGS = 0 V 0.485 0.53
IS = 3.0 A, VGS = 0 V, TJ = 125_C 0.420 0.47
20 30
V
= 15 V, VGS = 5 V, ID = 10 A 8 nC
DS
7
0.5 1.0 1.6 W
15 30
VDD = 15 V, RL = 15 W
ID ^ 1 A, V
GEN
= 10 V, RG = 6 W
8 15
45 90
18 40
IF = 3.0 A, di/dt = 100 A/ms 36 70
mA
W
V
ns
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2-2
Document Number: 70802
S-31062—Rev. F, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si4810DY
Vishay Siliconix
50
VGS = 10 thru 5 V
40
30
20
- Drain Current (A)I
D
10
0
012345
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
W )
0.04
0.03
Output Characteristics Transfer Characteristics
4 V
3 V
50
40
30
20
- Drain Current (A)I
D
10
0
012345
VGS - Gate-to-Source Voltage (V)
TC = 125_C
25_C
-55_C
Capacitance
3500
C
(MOSFET)
2800
2100
iss
- On-Resistance (r
0.02
DS(on)
0.01
0.00
0 1020304050
VGS = 4.5 V
I
D
VGS = 10 V
- Drain Current (A)
Gate Charge
10
VDS = 15 V
I
= 10 A
D
8
6
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0 8 16 24 32 40
Qg - Total Gate Charge (nC)
1400
C - Capacitance (pF)
700
0
0 5 10 15 20 25 30
C
(MOSFET + Schottky)
oss
C
(MOSFET)
rss
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
I
= 10 A
W)
(Normalized)
- On-Resistance (r
DS(on)
D
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T
- Junction Temperature (_C)
J
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-3
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