Vishay Si4804BDY Datasheet

Dual N-Channel 30 V (D-S) MOSFET

Si4804BDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

DS(on)

0.022 at V

0.030 at V

GS

GS

(Ω)I

= 10 V

= 4.5 V

D

(A)

7.5

6.5

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

• PWM Optimized

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Symmetrical Buck-Boost DC/DC Converter

SO-8

S

1

1

G

2

1

S

3

2

G

4

2

Top View

Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free)

Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

8

1

D

7

1

D

6

2

D

5

2

G

1

N-Channel MOSFET

D

1

G

2

S

1

D

2

S

2

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

L = 0.1 mH

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

7.5 5.7

6.0 4.6

1.7 0.9

2.0 1.1

1.3 0.7

30

± 20

30

10

5mJ

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Limits

Parameter Symbol

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 10 s

Steady State 93 110

R

thJA

R

thJF

Typ. Max.

52 62.5

35 40

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72061
S10-0461-Rev. G, 22-Feb-10

Unit

°C/W

www.vishay.com

1

Si4804BDY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

b

b

b

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e la y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

Q

Q

R

t

d(on)

t

d(off)

fs

SD

g

gs

gd

g

t

r

t

f

t

rr

V

V

VDS = 15 V, V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

V

= 30 V, V

DS

GS

= 5 V, V

DS

V

= 10 V, ID = 7.5 A

GS

= 4.5 V, ID = 6.5 A

GS

= 0 V

GS

= 0 V, TJ = 85 °C

= 10 V

GS

VDS = 15 V, ID = 7.5 A

IS = 1 A, V

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

GEN

= 0 V

GS

= 4.5 V, ID = 7.5 A

GS

= 10 V, Rg = 6 Ω

IF = 1.7 A, dI/dt = 100 A/µs

0.8 3.0 V

± 100 nA

20 A

0.5 1.5 2.6 Ω

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

a

Typ.

Max. Unit

1

15

0.017 0.022

0.024 0.030

19 S

0.75 1.2 V

711

2.9

2.5

915

10 17

19 30

915

35 55

µA

Ω

nCGate-Source Charge

ns

www.vishay.com
2

Document Number: 72061

S10-0461-Rev. G, 22-Feb-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4804BDY

Vishay Siliconix

- Drain Current (A)I

D

- On Resistance (Ω)R

DS(on)

30

25

20

15

10

VGS = 10 V thru 5 V

5

0

0246810

- Drain-to-Source Voltage (V)

V

DS

4 V

3 V

Output Characteristics

0.040

0.030

VGS = 4.5 V

0.020

0.010

VGS = 10 V

30

25

20

15

- Drain Current (A)I

10

D

5

0

012345

1200

960

720

480

Capacitance (pF)

-

C

240

TC = 125 °C

25 °C

- Gate-to-Source Voltage (V)

V

GS

- 55 °C

Transfer Characteristics

C

iss

C

oss

0.000
0 5 10 15 20 25 30

On-Resistance vs. Drain Current

10

VDS = 15 V

= 7.5 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 3 6 9 12 15

Document Number: 72061
S10-0461-Rev. G, 22-Feb-10

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

Gate Charge

C

rss

0

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8
VGS = 10 V

= 7.5 A

I

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

- On-Resistance R

DS(on)

(Normalized)

1.6

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

www.vishay.com

3