Vishay Si4800DY Schematic [ru]
N-Channel Reducded Qg, Fast Switching MOSFET
30
b
b
PRODUCT SUMMARY
Si4800DY
Vishay Siliconix
V
(V) r
DS
0.0185 @ VGS = 10 V 9
0.033 @ VGS = 4.5 V 7
(W) I
DS(on)
(A)
D
DD
SO-8
SD
1
S
2
SD
3
G
4
Top View
Ordering Information: Si4800DY
Si4800DY-T1 (with Tape and Reel)
8
D
7
6
D
5
N-Channel MOSFET
G
SDDS S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
a,
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current (10 ms Pulse Width) I
Continuous Source Current (Diode Conduction)
Maximum Power Dissipationa,
Operating Junction and Storage Temperature Range TJ, T
_
a, b
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70856
S-31062—Rev. B, 26-May-03
a
t v 10 sec
Steady State
R
thJA
DS
GS
I
D
DM
I
S
P
D
stg
70
30
"25
9
7
40
2.3
2.5
1.6
-55 to 150 _C
50
_C/W
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V
A
W
1
Si4800DY
Drain-S
a
W
VDD = 15 V, RL = 15 W
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
-
ource On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
-
a
a
a
I
r
DS(on)
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
GS(th)
GSS
DSS
D(on)
g
fs
V
SD
g
gs
gd
g
d(on)
r
d(off)
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= 250 mA 0.8 V
D
"100 nA
VDS = 24 V, VGS = 0 V 1
VDS = 24 V, VGS = 0 V, TJ = 55_C 5
VDS w 5 V, V
V
= 10 V, I
GS
GS
D
= 10 V
= 9 A
30 A
0.0155 0.0185
VGS = 4.5 V, ID = 7 A 0.0275 0.033
VDS = 15 V, ID = 9 A 16 S
IS = 2.3 A, VGS = 0 V 0.71 1.2 V
8.7 13
V
= 15 V, VGS = 5.0 V, ID = 9 A 2.25 nC
DS
4.2
0.5 1.5 2.6 W
11 16
VDD = 15 V, RL = 15 W
ID ^ 1 A, V
GEN
= 10 V, RG = 6 W
8 15
22 30
9 15
IF = 2.3 A, di/dt = 100 A/ms 50 80
mA
ns
Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.
300 ms, duty cycle v 2%.
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2
Document Number: 70856
S-31062—Rev. B, 26-May-03
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