Vishay Si4800BDY Schematic

Si4800BDY

Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY

VDS (V) R

30

0.0185 at V

0.030 at V

(Ω)I

DS(on)

GS

= 10 V

= 4.5 V

D

(A)

9

7

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

• High-Efficient PWM Optimized

• 100 % UIS and R

®

Power MOSFET

Tested

g

SO-8

S

1

S

2

S

3

G

4

Top View

Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)

Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

8

D

7

D

6

D

5

G

N-Channel MOSFET

D

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)

a, b

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

L = 0.1 mH

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

7.0 5.0

2.3

2.5 1.3

1.6 0.8

30

± 25

96.5

40

15

11.25 mJ

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Limits

Parameter Symbol

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 70 95

Maximum Junction-to-Foot (Drain) Steady State

R

thJA

R

thJF

40 50

24 30

Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s.

Document Number: 72124 S-83039-Rev. H, 29-Dec-08

Unit Typ. Max.

°C/W

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Si4800BDY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

I

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

= 30 V, V

DS

GS

≥ 5 V, V

DS

V

= 10 V, ID = 9 A

GS

V

= 4.5 V, ID = 7 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 9 A

IS = 2.3 A, V

= 15 V, V

DS

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

D

GEN

= 0 V

GS

= 5.0 V, ID = 9 A

GS

= 10 V, Rg = 6 Ω

IF = 2.3 A, dI/dt = 100 A/µs

0.8 1.8 V

± 100 nA

1

5

30 A

0.0155 0.0185

0.023 0.030

16 S

0.75 1.2 V

8.7 13

1.5

nCGate-Source Charge

3.5

0.5 1.4 2.2 Ω

715

12 20

32 50

14 25

30 60

µA

Ω

ns

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Document Number: 72124

S-83039-Rev. H, 29-Dec-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4800BDY

Vishay Siliconix

- Drain Current (A)I

D

- On-Resistance (Ω)R

DS(on)

40

35

30

25

20

15

10

5

0

012345

0.040

0.032

0.024

0.016

0.008

0.000 0 5 10 15 20 25 30

VGS = 10 thru 5 V

4 V

3 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

VGS = 4.5 V

VGS = 10 V

ID - Drain Current (A)

On-Resistance vs. Drain Current

40

35

30

25

20

15

- Drain Current (A)I

D

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

1200

1000

800

600

C - Capacitance (pF)

400

200

0

048121620

TC = - 55 °C

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

25 °C

125 °C

6

VDS = 15 V

= 9 A

I

5

4

3

2

- Gate-to-Source Voltage (V)

GS

V

1

0

0246810

D

Document Number: 72124 S-83039-Rev. H, 29-Dec-08

Qg - Total Gate Charge (nC)

Gate Charge

1.8

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 V

= 9 A

I

D

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Vishay Si4800BDY Schematic [ru]