Vishay Si4634DY Schematic

N-Channel 30-V (D-S) MOSFET

Si4634DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.0052 at V

30

0.0067 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

I

D

(A)

24.5

21.7

a

Qg (Typ.)

21.5 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

• 100 % R

®

Power MOSFET

and UIS Tested

g

APPLICATIONS

• Buck Converter

SO-8

SD

1

SD

2

SD

3

GD

4

To p View

Ordering Information: Si4634DY-T1-E3 (Lead (Pb)-free)

Si4634DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

7

6

5

• Synchronous Rectifier

- Secondary Rectifier

• Notebook

G

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T T TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy

T T

L = 0.1 mH

T

Maximum Power Dissipation

T T TA = 70 °C

Operating Junction and Storage Temperature Range

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

30

± 20

V

24.5

I

D

I

DM

I

S

I

AS

E

AS

19.5

16.3

13.0

5.1

2.2

70

30 45

b, c

A

mJ

5.7

P

D

, T

T

J

stg

2.5

1.6

3.6

b, c

W

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 74030 S09-0138-Rev. B, 02-Feb-09

b, d

t ≤ 10 s

R

thJA

R

thJF

39 50 18 22

°C/W

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1

Si4634DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-on Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-on Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 15 A

GS

V

= 4.5 V, ID = 10 A

GS

V

= 15 V, ID = 15 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

TC = 25 °C

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

1.4 2.6 V

= 0 V

30 A

33

- 6.4

mV/°C

± 100 nA

1

10

0.0043 0.0052

0.0055 0.0067

78 S

3150

= 0 V, f = 1 MHz

GS

420

166

= 10 V, ID = 10 A

GS

45.5 68

21.5 33

= 4.5 V, ID = 10 A

GS

8.0

6.2

f = 1 MHz 0.75 1.5 Ω

30 50

15 30

= 4.5 V, Rg = 1 Ω

GEN

33 55

10 20

14 25

10 20

= 10 V, Rg = 1 Ω

GEN

33 55

816

5.1

70

IS = 3 A

0.75 1.1 V

30 60 ns

35 70 nC

20

10

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 74030

S09-0138-Rev. B, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4634DY

Vishay Siliconix

70

VGS = 10 thru 4 V

56

42

28

- Drain Current (A)I

D

14

0

0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.0075

0.0067

0.0059

VGS = 4.5 V

3 V

1.5

1.2

0.9

TC = 25 °C

0.6

- Drain Current (A)I

D

0.3

0.0 012345

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

3800

C

iss

3040

2280

0.0051

- On-Resistance (Ω)R

DS(on)

0.0043

0.0035 01428 42 56 70

ID - Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 10 A

8

VDS = 10 V

6

VDS = 15 V

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 9.6 19.2 28.8 38.4 48.0

Qg - Total Gate Charge (nC)

VDS = 20 V

Gate Charge

VGS = 10 V

1520

C - Capacitance (pF)

760

C

rss

0

061218 24 30

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

1.7

ID = 15 A

1.5

1.3

- On-ResistanceR

1.1

(Normalized)

DS(on)

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS = 10 V

On-Resistance vs. Junction Temperature

VGS = 4.5 V

Document Number: 74030 S09-0138-Rev. B, 02-Feb-09

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3

Si4634DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

0.020

ID = 15 A

0.016

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

Source-Drain Diode Forward Voltage

0.6

ID = 250 µA

0.3

ID = 5 mA

0

Variance (V)V

- 0.3

GS(th)

- 0.6

- On-Resistance (Ω)R

DS(on)

Power (W)

0.012

0.008

0.004

0.000 012345678 910

VGS - Gate-to-Source Voltage (V)

TA = 125 °C

TA = 25 °C

On-Resistance vs. Gate-to-Source Voltage

170

136

102

68

34

- 0.9

- 50 - 25 0 25 50 75 100 125 150

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TJ - Temperature (°C)

Threshold Voltage

Limited by R

- Drain Current (A)I

D

0

0.001

Single Pulse Power, Junction-to-Ambient

100

DS(on)*

10

1 ms

1

0.1

TA = 25 °C

Single Pulse

0.01

0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

minimum VGS at which R

* V

GS

DS(on)

10 ms

100 ms

1 s

10 s

DC

is specified

Safe Operating Area, Junction-to-Ambient

0.1

Time (s)

1

Document Number: 74030

S09-0138-Rev. B, 02-Feb-09

100.01

Vishay Si4634DY Schematic [ru]