Vishay si4483ed Datasheet

P-Channel 30-V (D-S) MOSFET

Si4483EDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

DS(on)

0.0085 at V

0.014 at V

GS

GS

(Ω)I

= - 10 V

= - 4.5 V

(A)

D

- 14

- 11

FEATURES

• Halogen-free According to IEC 61249-2-21
Available

• TrenchFET

• ESD Protection: 3000 V

®

Power MOSFET

APPLICATIONS

• Notebook PC

- Load Switch

- Adapter Switch

SO-8

S

1

S

2

S

3

G

4

Top View

Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free)

Si4483EDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

8

D

7

D

6

D

5

G

7100 Ω

P-Channel

S

D

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 14 - 10

- 11 - 8

- 2.7 - 1.36

- 30

± 25

- 50

3.0 1.5

1.9 0.95

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 70 85

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72862
S-83038-Rev. D, 22-Dec-08

R

thJA

R

thJF

33 42

°C/W

16 21

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1

Si4483EDY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

t

d(on)

t

r

t

d(off)

t

f

V

V

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

I

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 4.5 V

V

= 0 V, VGS = ± 25 V

DS

V

= - 30 V, V

DS

= - 30 V, V

DS

DS

V

V

GS

= - 5 V, V

GS

= 0 V, TJ = 70 °C

GS

GS

= - 10 V, ID = - 14 A

= - 4.5 V, ID = - 11 A

VDS = - 15 V, ID = - 14 A

IS = - 2.7 A, V

V

= - 15 V, RL = 15 Ω

DD

≅ - 1 A, V

D

GS

= - 10 V, Rg = 6 Ω

GEN

= 0 V

GS

= - 10 V

= 0 V

- 1.0 - 3.0 V

± 1 µA

± 10 mA

- 1

- 10

- 30 A

0.007 0.0085

0.0115 0.014

60 S

- 0.74 - 1.1 V

10 15

20 30

42 65

50 80

µA

Ω

µs

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

8

6

4

- Gate Current (mA)

GSS

2

I

0

0 5 10 15 20 25 30

VGS - Gate-to-Source Voltage (V)

Gate-Current vs. Gate-Source Voltage

100

10

1

0.1

- Gate Current (mA)

0.01

GSS

I

0.001

0.0001
06

TJ = 150 °C

TJ = 25 °C

12 18 24

- Gate-to-Source Voltage (V)

V

GS

Gate Current vs. Gate-Source Voltage

30

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Document Number: 72862

S-83038-Rev. D, 22-Dec-08