Vishay Si4466DY Datasheet

N-Channel 2.5-V (G-S) MOSFET

Si4466DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

20

DS(on)

0.009 at V

0.013 at V

GS

GS

(Ω)I

= 4.5 V

= 2.5 V

(A)

D

13.5

11

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

®

Power MOSFETs

• Compliant to RoHS Directive 2002/95/EC

D

SO-8

S D

1

S D

2

3

S D

G D

4

T op V i e w

Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free)
Si4466DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

7

6

5

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

13.5 9.5

10.5 7.5

2.7 1.36

3.0 1.5

1.9 0.95

20

± 12

50

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 70 84

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.

Document Number: 71820
S09-0767-Rev. F, 04-May-09

R

thJA

R

thJF

33 42

°C/W

16 21

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Si4466DY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

V

VDS = 10 V, V

I

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

= 20 V, V

DS

= 20 V, V

DS

≥ 5 V, V

DS

V

= 4.5 V, ID = 13.5 A

GS

V

= 2.5 V, ID = 11 A

GS

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 4.5 V

GS

VDS = 10 V, ID = 13.5 A

IS = 2.7 A, V

V

= 10 V, RL = 10 Ω

DD

≅ 1 A, V

D

GS

GEN

= 0 V

GS

= 4.5 V, ID = 13.5 A

= 10 V, Rg = 6 Ω

IF = 2.7 A, dI/dt = 100 A/µs

0.6 1.0 1.4 V

± 100 nA

1

5

µA

30 A

0.0055 0.009

0.0078 0.013

70 S

0.70 1.1 V

40 60

7

nCGate-Source Charge

12

0.5 1.9 3.3 Ω

20 30

15 25

150 250

70 110

55 90

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

VGS = 5 V thru 2.5 V

40

30

20

- Drain Current (A)I

D

10

0

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2

012345

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

2 V

50

40

30

20

- Drain Current (A)I

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5

V

TC = 125 °C

25 °C

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

Document Number: 71820

S09-0767-Rev. F, 04-May-09

- 55 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4466DY

Vishay Siliconix

0.020

0.016

0.012

- On-Resistance (Ω)R

0.008

DS(on)

0.004

0.000

- Gate-to-Source Voltage (V)

GS

V

VGS = 2.5 V

VGS = 4.5 V

0 1020304050

ID - Drain Current (A)

On-Resistance vs. Drain Current

6

VDS = 10 V
I

= 13.5 A

D

5

4

3

2

1

4000

3200

2400

1600

C - Capacitance (pF)

800

0

048121620

1.6

VGS = 4.5 V
I

1.4

1.2

- On-ResistanceR

1.0

(Normalized)

DS(on)

0.8

C

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

= 13.5 A

D

iss

0

0 102030405060

50

TJ = 150 °C

10

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

Source-Drain Diode Forward Voltage

Document Number: 71820
S09-0767-Rev. F, 04-May-09

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 25 °C

- Source-to-Drain Voltage (V)

SD

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

0.05

0.04

ID = 13.5 A

0.03

0.02

- On-Resistance (Ω)R

DS(on)

0.01

0.00
02468

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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