Vishay Si4435BDY Datasheet

P-Channel 30-V (D-S) MOSFET

)

Si4435BDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.020 at V

- 30

Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free)
Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free

S

S

S

G

0.035 at V

1

2

3

4

(Ω)I

DS(on)

= - 10 V

GS

= - 4.5 V

GS

(A)

D

- 9.1

- 6.9

SO-8

D

8

D

7

D

6

D

5

Top Vi ew

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

®

Power MOSFET

• Advanced High Cell Density Process

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switches

• Battery Switch

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

TA = 25 °C

T

= 70 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 9.1 - 7

- 7.3 - 5.6

- 2.1 - 1.25

- 30

± 20

- 50

2.5 1.5

1.6 0.9

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 70 85

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72123
S09-0767-Rev. D, 04-May-09

R

thJA

R

thJF

40 50

°C/W

18 22

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1

Si4435BDY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

Total Gate Charge

Gate-Drain Charge

Tur n -O n De l ay T i m e

Rise Time

Tur n -O f f D e lay T im e

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

V

V

DS

I

D

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

DS

= - 5 V, V

DS

V

= - 10 V, ID = - 9.1 A

GS

V

= - 4.5 V, ID = - 6.9 A

GS

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 10 V, ID = - 9.1 A

IS = - 2.1 A, V

= - 15 V, V

≅ - 1 A, V

GS

V

= - 15 V, RL = 15 Ω

DD

GEN

= 0 V

GS

= - 10 V, ID = - 9.1 A

= - 10 V, Rg = 6 Ω

IF = - 2.1 A, dI/dt = 100 A/µs

- 1 - 3 V

± 100 nA

- 1

- 5

µA

- 40 A

0.015 0.020

0.025 0.035

24 S

- 0.8 - 1.2 V

33 70

5.8

nCGate-Source Charge

8.6

10 15

15 25

110 170

70 110

60 90

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

40

30

20

- Drain Current (A)I

D

10

0

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2

012345

V

= 10 V thru 6 V

GS

5 V

4 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

- Drain Current (A)I

3 V

50

TC = - 55 °C

40

30

20

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

- Gate-to-Source Voltage (V)

GS

25 °C

Transfer Characteristics

Document Number: 72123

S09-0767-Rev. D, 04-May-09

125 °C