VISHAY SI4434DY-GE3 Datasheet

N-Channel 250-V (D-S) MOSFET

Si4434DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) Rr

250

S

1

2

S

3

S

4

G

Ordering Information:

DS(on)

0.155 at V

0.162 at V

SO-8

T op V iew

Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

(Ω)I

= 10 V

GS

= 6.0 V

GS

8

D

7

D

6

D

5

D

(A)

3.0

2.9

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• PWM-Optimized TrenchFET

• 100 % R

Tested

g

®

Power MOSFET

• Avalanche Tested

APPLICATIONS

• Primary Side Switch In:

- Telecom Power Supplies

- Distributed Power Architectures

- Miniature Power Modules

G

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

250

± 20

3.0 2.1

2.4 1.7

30

2.6 1.3

13

8.4 mJ

3.1 1.56

2.0 1.0

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 65 80

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board.

R

thJA

R

thJF

33 40

°C/W

17 21

Document Number: 72562 S09-0322-Rev. D, 02-Mar-09

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1

Si4434DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

DS

V

DS

I

D

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 250 V, V

DS

= 250 V, V

≥ 10 V, V

DS

V

= 10 V, ID = 3.0 A

GS

V

= 6.0 V, ID = 2.9 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 3.0 A

IS = 2.8 A, V

= 100 V, V

V

= 100 V, RL = 25 Ω

DD

≅ 4.0 A, V

GEN

= 0 V

GS

= 10 V, ID = 3.0 A

GS

= 10 V, Rg = 6 Ω

IF = 2.8 A, dI/dt = 100 A/µs

2.0 4.0 V

± 100 nA

1

15

µA

20 A

0.129 0.155

0.131 0.162

14 S

0.75 1.2 V

34 50

6.8

nCGate-Source Charge

10.5

0.6 1.2 1.8 Ω

16 25

23 35

47 70

19 30

100 150

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30

VGS = 10 V thru 6 V

24

18

12

- Drain Current (A)

D

I

6

0

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0246810

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

5 V

- Drain Current (A) I

40

35

30

25

20

15

D

10

5

0

0123456

V

- Gate-to-Source Voltage (V)

GS

TC = 125 °C

25 °C

Transfer Characteristics

Document Number: 72562

S09-0322-Rev. D, 02-Mar-09

- 55 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.30

Si4434DY

Vishay Siliconix

2500

0.24

0.18

0.12

- On-Resistance (Ω)

DS(on)

R

0.06

0.00

- Gate-to-Source Voltage (V)

GS

V

VGS = 6 V

0 8 16 24 32 40

ID - Drain Current (A)

VGS = 10 V

On-Resistance vs. Drain Current

10

VDS = 100 V I

= 3.0 A

D

8

6

4

2

2000

1500

1000

C - Capacitance (pF)

500

0

0 50 100 150 200 250

2.5

VGS = 10 V I

= 3.0 A

D

2.0

1.5

- On-Resistance (Normalized)

DS(on)

R

1.0

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

0

0 7 14 21 28 35

50

10

- Source Current (A)

S

I

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

DS

Source-Drain Diode Forward Voltage

Document Number: 72562 S09-0322-Rev. D, 02-Mar-09

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

- Source-to-Drain Voltage (V)

V

TJ = 25 °C

0.5

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.25

0.20

ID = 3.0 A

0.15

0.10

- On-Resistance (Ω)

DS(on)

R

0.05

0.00 0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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Si4434DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.0 60

0.5

ID = 250 µA

0.0

Variance (V)V

- 0.5

GS(th)

- 1.0

- 1.5

- 50 - 25 0 25 50 75 100 125 150

T

- Temperature (°C)

J

Threshold Voltage

100

10

0.1

- Drain Current (A)

D

I

0.01

1

Limited by

*

R

DS(on)

TC = 25 °C

Single Pulse

Power (W)

50

40

30

20

10

0

0.10.01

1 10010

Time (s)

Single Pulse Power

1 ms

10 ms

100 ms

1 s

10 s

DC

0.1

Thermal Impedance

Normalized Effective Transient

0.01

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2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-4

10

Single Pulse

0.001

0.1 10 100 1000

1

VDS - Drain-to-Source Voltage (V)

> minimum VGS at which R

* V

GS

DS(on)

is specified

Safe Operating Area, Junction-to-Case

Notes:

P

DM

t

1

t

2

t

thJA

100

1

t

2

= 65 °C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-3

10

-2

10

-1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 72562

S09-0322-Rev. D, 02-Mar-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.01

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Thermal Impedance

Normalized Effective Transient

Si4434DY

Vishay Siliconix

1 100010

10 100

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72562

Document Number: 72562

.

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S09-0322-Rev. D, 02-Mar-09

5

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192 11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

0.022

(0.559)

0.246 (6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice

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Vishay

Disclaimer



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Revision: 08-Feb-17

1

Document Number: 91000