Vishay Si4336DY Datasheet

Si4336DY

30

C/W

PRODUCT SUMMARY

V

DS

(V)

r

DS(on)

0.00325 @ VGS = 10 V 25

0.0042 @ VGS = 4.5 V 22

SD

1

SD

2

SD

3

GD

4

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

D Ultra Low On-Resistance Using High Density

TrenchFETr Gen II Power MOSFET Technology

D Q

Optimized

(W)

SO-8

I

(A)

D

8

7

6

5

g

D 100% R

Tested

g

APPLICATIONS

D Synchronous Buck Low-Side

− Notebook

− Server

− Workstation

D Synchronous Rectifier, POL

D

G

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Top View

Ordering Information: Si4336DY

Si4336DY-T1 (with Tape and Reel)

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Avalanche Current L = 0.1 mH I

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

I

P

I

DM

I

AS

DS

GS

D

25 17

20 13

S

D

stg

2.9 1.3

3.5 1.6

2.2 1

30

"20

70

50

−55 to 150

THERMAL RESISTANCE RATINGS

V

A

W

_C

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72417
S-31858—Rev. A, 15-Sep-03

Parameter Symbol Typical Maximum Unit

a

t v 10 sec

Steady State

R

thJA

thJF

29 35

67 80

13 16

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_C/W

1

Si4336DY

Drain-Source On-State Resistance

a

r

W

VDD = 15 V, RL = 15 W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

-

a

a

a

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

V

SD

iss

oss

rss

g

gs

gd

G

d(on)

r

d(off)

f

rr

VDS = VGS, I

= 250 mA

D

VDS = 0 V, VGS = "20 V

VDS = 30 V, VGS = 0 V 1

VDS = 30 V, VGS = 0 V, TJ = 55_C

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 25 A

VGS = 4.5 V, ID = 22 A 0.0033 0.0042

VDS = 15 V, ID = 25 A 110 S

IS = 2.9 A, VGS = 0 V 0.72 1.1 V

V

= 15 V, VGS = 0 V, f = 1 MHz

DS

V

= 15 V, VGS = 4.5 V, ID = 20 A

DS

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

= 10 V, RG = 6 W

GEN

IF = 2.9 A, di/dt = 100 A/ms

1.0 3.0 V

"100 nA

5

30 A

0.0026 0.00325

5600

860

415

32 50

16.5

8.5

0.8 1.3 2.0

24 35

16 25

90 140

32 50

45 70

mA

pF

nC

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

60

50

40

30

20

− Drain Current (A)I

D

10

0

0.0 0.4 0.8 1.2 1.6 2.0

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2

Output Characteristics Transfer Characteristics

VGS = 10 thru 4 V

VDS − Drain-to-Source Voltage (V)

3 V

60

50

40

30

20

− Drain Current (A)I

D

10

TC = 125_C

25_C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

Document Number: 72417

S-31858—Rev. A, 15-Sep-03

−55_C