VISHAY SI4174DY-GE3 Datasheet

New Product

D

N-Channel 30-V (D-S) MOSFET

Si4174DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.0095 at V

30

0.013 at V

DS(on)

(Ω)

GS

GS

= 10 V

= 4.5 V

I

D

(A)

17

14.5

a

Qg (Typ.)

8 nC

FEATURES

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

®

Power MOSFET

and UIS Tested

g

APPLICATIONS

• Notebook CPU Core

- High-Side Switch

SO-8

SD

1

SD

2

SD

3

GD

4

Top View

Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

7

6

5

G

N-Channel MOSFET

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T
T
TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current
Avalanche Energy

T
T

L = 0.1 mH

T

Maximum Power Dissipation

T
T
TA = 70 °C

Operating Junction and Storage Temperature Range

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

30

± 20

V

17

I

D

I

DM

I

S

I

AS

E

AS

13.5

12

9.6

2.2

50

4.5

20

20

b, c

b, c

b, c

A

mJ

5

P

D

T

, T

J

stg

3.2

b, c

2.5

b, c

1.6

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 68998
S-82773-Rev. A, 17-Nov-08

b, d

t ≤ 10 s

R

thJA

R

thJF

38 50
20 25

°C/W

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New Product

Si4174DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

V

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

DS

V

DS

V

DS

V

DS

VDS = V

V

DS

V

DS

= 30 V, V

DS

V

V

V

= 15 V, V

= 15 V, V

= 15 V, V

, ID = 250 µA

GS

= 0 V, V

GS

= 30 V, V

≥ 5 V, V

= 10 V, ID = 10 A

GS

GS

= 15 V, ID = 10 A

DS

GS

= 0 V, TJ = 55 °C

GS

GS

= 4.5 V, ID = 7 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 10 A

GS

= 4.5 V, ID = 10 A

GS

= ± 20 V

= 0 V

= 10 V

f = 1 MHz 0.3 1.3 2.6 Ω

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

I

D

V

≅ 10 A, V

I

D

DD

= 4.5 V, Rg = 1 Ω

GEN

= 15 V, RL = 1.5 Ω

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 3 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30 V

34

- 4.7

mV/°C

1.0 2.2 V

± 100 nA

1

10

30 A

0.0078 0.0095

0.0108 0.0130

30 S

985

205

76

18 27

812

2.4

2.3

14 25

12 24

19 35

918

816

10 20

16 30

918

4.5

50

0.76 1.1 V

14 28 ns

510nC

8

6

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 68998

S-82773-Rev. A, 17-Nov-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4174DY

Vishay Siliconix

50

40

30

20

- Drain Current (A)I

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS=10thru 4 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.015

0.013

VGS=4.5V

0.011

VGS=3V

8.0

6.4

4.8

3.2

- Drain Current (A)I

D

1.6

0.0
012345

TC= 25 °C

TC= 125 °C

V

GS

TC= - 55 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

1300

C

iss

1040

780

- On-Resistance (Ω)R

0.009

DS(on)

0.007

0.005
0 1020304050

VGS=10V

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID=10A

8

6

VDS=10V

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 3.7 7.4 11.1 14.8 18.5

Qg- Total Gate Charge (nC)

VDS=15V

VDS=20V

Gate Charge

520

C - Capacitance (pF)

260

C

0

0 2.4 4.8 7.2 9.6 12

C

oss

rss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

1.6

1.4

1.2

- On-Resistance
(Normalized)

1.0

DS(on)

R

0.8

0.6

ID=10A

VGS=10V

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 68998
S-82773-Rev. A, 17-Nov-08

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