VISHAY SI4162DY-GE3 Datasheet

N-Channel 30-V (D-S) MOSFET

Si4162DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.0079 at V

30

0.010 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

I

(A)

D

19.3

17.1

(Typ.)

Q

g

a

8.8 nC

a

FEATURES

• Halogen-free

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

RoHS

COMPLIANT

APPLICATIONS

• DC/DC

SO-8

SD

1

SD

2

SD

3

GD

4

Top Vi ew

Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

7

6

5

- High Side

- VRM

- POL

- Server

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

T

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

DS

GS

I

D

TA = 70 °C Pulsed Drain Current I Avalanche Current Avalanche Energy E

Continuous Source-Drain Diode Current

Maximum Power Dissipation

L = 0.1 mH

T

= 25 °C

C

T

= 25 °C

A

= 25 °C

T

C

T

= 70 °C

C

= 25 °C

T

A

I

P

DM

AS

I

S

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

, T

J

stg

Soldering Recommendations (Peak Temperature) 260

30

± 20

a

19.3

15.4

b, c

13.6

b, c

10.9 70 31 48

a

4.2

b, c

2.1 5

3.2

b, c

2.5

b, c

1.6

- 55 to 150

V

A

mJ

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 68967 S-82621-Rev. A, 03-Nov-08

b, d

t ≤ 10 s

R

thJA

R

thJC

38 50 20 25

°C/W

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1

Si4162DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n - O n D e l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

a

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

≅ 1.0 A, V

I

D

I

D

IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

GS

V

GS

V

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 15 Ω

DD

V

= 15 V, RL = 15 Ω

DD

≅ 1.0 A, V

IS = 4.0 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

= 10 V, ID = 20 A

= 4.5 V, ID = 14 A

= 15 V, ID = 20 A

13V

50 A

32

- 5.5

± 100 nA

1

5

0.0065 0.0079

0.0082 0.010

70 S

1155

= 0 V, f = 1 MHz

GS

260

95

= 10 V, ID = 20 A

GS

20 30

8.8 14

= 4.5 V, ID = 20 A

GS

3.5

2.2

f = 1 MHz 1.0 2.0 Ω

20 30

15 25

= 4.5 V, Rg = 17 Ω

GEN

25 40

10 15

14 20

915

= 10 V, Rg = 1 Ω

GEN

25 40

915

TC = 25 °C

30

70

GS

= 0 V

0.8 1.2 V

21 42 ns

15 30 nC

12.6

8.4

mV/°C

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68967

S-82621-Rev. A, 03-Nov-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4162DY

Vishay Siliconix

70

60

50

40

30

- Drain Current (A)I

D

20

10

0

0.0 0.5 1.0 1.5 2.0

V

DS

VGS=10thru 4 V

- Drain-to-Source Voltage (V)

Output Characteristics

0.012

0.010

VGS=4.5V

0.008

VGS=10V

- On-Resistance (Ω)R

0.006

DS(on)

0.004

VGS=3V

1.0

TC=- 55 °C

0.8

TC= 25 °C

0.6

0.4

- Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TC= 125 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

1500

C

1200

900

600

C - Capacitance (pF)

300

iss

C

oss

0.002 0 10203040506070

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

I

=20A

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 5 10 15 20

Qg- Total Gate Charge (nC)

VDS=15V

VDS=7.5V

VDS=22.5V

Gate Charge

C

rss

0

0 6 12 18 24 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.7

ID=20A

1.5

1.3

- On-Resistance

1.1

(Normalized)

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

T

-Junction Temperature (°C)

J

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 68967 S-82621-Rev. A, 03-Nov-08

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Si4162DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.030

10

TJ= 150 °C

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-Source-to-Drain Voltage (V)

V

SD

TJ= 25 °C

TJ= - 50 °C

Source-Drain Diode Forward Voltage

0.5

0.2

- 0.1

Variance (V)V

- 0.4

GS(th)

- 0.7

ID= 250 µA

ID=5mA

0.025

0.020

0.015

- On-Resistance (Ω)

0.010

DS(on)

R

0.005

0.000 012345678 910

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ=25 °C

On-Resistance vs. Gate-to-Source Voltage

100

80

60

Power (W)

40

20

- 1.0

- 50 - 25 0 25 50 75 100 125 150

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TJ- Temperature (°C)

Threshold Voltage

Limited byR

- Drain Current (A)

D

I

0

Single Pulse Power (Junction-to-Ambient)

100

10

1

0.1

0.01

0.1 1 10 100

*

DS(on)

TA=25 °C

Single Pulse

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

* V

GS

BVDSS Limited

DS(on)

10 µs

100 µs

1ms

10 ms

100 ms

1s 10 s 100 s, DC

is specified

Safe Operating Area, Junction-to-Ambient

011100.0 0.01 0.1

Time (s)

Document Number: 68967

S-82621-Rev. A, 03-Nov-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

25

20

15

10

- Drain Current (A)

D

I

5

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Current Derating*

Si4162DY

Vishay Siliconix

6.0

4.5

3.0

Power (W)

1.5

0.0 0 25 50 75 100 125 150

TC- Case Temperature (°C)

Power, Junction-to-Case

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

2.0

1.6

1.2

Power (W)

0.8

0.4

0.0 0 25 50 75 100 125 150

TA-Ambient Temperature (°C)

Power, Junction-to-Ambient

limit.

Document Number: 68967 S-82621-Rev. A, 03-Nov-08

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Si4162DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

10

1

0.1

0.01 10

0.1

0.05

0.02

-4

Duty Cycle = 0.5

0.2

0.1

Single Pulse

-4

-3

10

0.02

Single Pulse

-2

10

-1

1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.05

-3

10

-2

10

-1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

10

t

1

t

2

t

1

t

2

= 85 °C/W

thJA

(t)

100

100010

01110

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68967.

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Document Number: 68967

S-82621-Rev. A, 03-Nov-08

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192 11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

0.022

(0.559)

0.246 (6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

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Legal Disclaimer Notice

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Vishay

Disclaimer



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Revision: 08-Feb-17

1

Document Number: 91000