Vishay Si3456BDV Schematic

N-Channel 30-V (D-S) MOSFET

T

Si3456BDV

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.035 at V

0.052 at V

TSOP-6

Top View

1

3 mm

Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free)

Marking Code:

2

3

2.85 mm

Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

6Bxxx

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

6

5

4

D

(A)

6.0

4.9

FEATURES

• Halogen free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

®

Power MOSFET

Tested

g

(3) G

(1, 2, 5, 6) D

(4) S

N-Channel MOSFE

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

6.0 4.5

4.8 3.6

1.7 0.9

2.0 1.1

1.3 0.7

30

± 20

± 30

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 92 110

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72544 S09-0530-Rev. D, 06-Apr-09

R

thJA

R

thJF

55 62.5

°C/W

28 40

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1

Si3456BDV

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n D el a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

VDS = 15 V, V

I

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

= 30 V, V

DS

GS

≥ 5 V, V

DS

V

= 10 V, ID = 6 A

GS

V

= 4.5 V, ID = 4.9 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 6 A

IS = 1.7 A, V

= 0 V

GS

= 10 V, ID = 6 A

GS

f = 1 MHz 1.4 2.8 4.8 Ω

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

D

= 10 V, Rg = 6 Ω

GEN

IF = 1.7 A, dI/dt = 100 A/µs

1.0 3.0 V

± 100 nA

1

5

30 A

0.028 0.035

0.041 0.052

12 S

0.8 1.2 V

8.6 13

1.8

nCGate-Source Charge

1.5

10 15

15 25

25 40

10 15

20 40

µA

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

35

30

25

20

15

- Drain Current (A)I

D

10

5

0

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012345

VGS = 10 V thru 6 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

5 V

4 V

3 V

40

35

30

25

20

15

- Drain Current (A)I

D

10

5

0

0123456

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

25 °C

Transfer Characteristics

Document Number: 72544

S09-0530-Rev. D, 06-Apr-09

125 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si3456BDV

Vishay Siliconix

- On-Resistance (Ω)R

DS(on)

0.10

0.08

0.06

VGS = 4.5 V

0.04

0.02

0.00 0 5 10 15 20 25 30 35 40

ID - Drain Current (A)

VGS = 10 V

On-Resistance vs. Drain Current

10

VDS = 15 V I

= 6 A

D

8

6

800

700

600

500

400

300

C - Capacitance (pF)

200

100

C

rss

0

0 5 10 15 20 25 30

1.6

VGS = 10 V I

1.4

1.2

C

iss

C

oss

V - Drain-to-Source Voltage (V)

DS

Capacitance

= 6 A

D

- Gate-to-Source Voltage (V)

GS

V

- Source Current (A)I

S

4

2

0

0246810

Qg - Total Gate Charge (nC)

Gate Charge

40

TJ = 150 °C

10

TJ = 25 °C

1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

0.10

0.08

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

0.00 024681

-

T

Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

ID = 6 A

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

0

Document Number: 72544 S09-0530-Rev. D, 06-Apr-09

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3

Si3456BDV

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.4

0.2

ID = 250 µA

0.0

- 0.2

Variance (V)V

GS(th)

- 0.4

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature ( °C)

Threshold Voltage

100

- Drain Current (A)

D

I

0.01

50

40

30

Power (W)

20

10

0

-

3

10

IDMLimited

P(t) = 0.0001 s

P(t) = 0.001 s

P(t) = 0.01 s

P(t) = 0.1 s P(t) = 1 s

P(t) = 10 s DC

Limited by R

10

1

0.1

I

D(on)

Limited

TA = 25 °C

Single Pulse

DS(on)

10

*

BVDSS Limited

0.1 1 10 100

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

*V

GS

DS(on)

is specified

Safe Operating Area

-

2

1

Single Pulse Power

1 100 6001010

Time (s)

0.1

Thermal Impedance

Normalized Effective Transient

0.01

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2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-

4

10

Single Pulse

-

3

10

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-

2

10

-

1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

t

1

t

2

t

1

t

2

= 92 °C/W

thJA

(t)

thJA

100

Document Number: 72544

S09-0530-Rev. D, 06-Apr-09

Vishay Si3456BDV Schematic [ru]