Vishay Si2333CDS Schematic

P-Channel 12-V (D-S) MOSFET

Si2333CDS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.035 at V

- 12

0.045 at V

0.059 at V

DS(on)

GS

(Ω)

= - 4.5 V

= - 2.5 V

= - 1.8 V

I

D

- 5.1

- 4.5

- 3.9

(A)

a

Qg (Typ.)

9 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

®

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• PA Switch

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2333CDS (O3)*

* Marking Code

Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free) Si2333CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

= 25 °C

T

C

T

= 25 °C

A

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

- 12 ± 8

V

- 7.1

I

D

I

DM

I

S

- 5.7

- 5.1

- 4.0

- 20

- 1.0

- 0.63

b, c

A

b, c

2.5

P

D

T

, T

J

stg

1.6

b, c

1.25

b, c

0.8

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s. d. Maximum under Steady State conditions is 166 °C/W.

Document Number: 68717 S09-2433-Rev. C, 16-Nov-09

b, d

≤ 5 s

Steady State

R

thJA

R

thJF

75 100

40 50

°C/W

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Si2333CDS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n D el a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

Δ

V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

= - 1 A, V

I

D

IF = - 1.0 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA

DS

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 12 V, V

DS

= - 12 V, V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 5.1 A

GS

V

= - 2.5 V, ID = - 4.5 A

GS

V

= - 1.8 V, ID = - 2.0 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 5 V, ID = - 5.3 A

= - 6 V, V

DS

= - 6 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 5.1 A

GS

= - 2.5 V, ID = - 5.1 A

GS

f = 1 MHz 4.0 Ω

V

= - 6 V, RL = 6 Ω

DD

= - 4.5 V, RG = 1 Ω

GEN

TC = 25 °C

IS = - 1.0 A

= 0 V

= - 4.5 V

- 12 V

- 13

2.6

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 20 A

0.0285 0.035

0.036 0.045

0.046 0.059

18.5 S

1225

315

260

15 25

915

1.9

3.8

13 20

35 60

45 70

12 20

- 1.0

- 20

- 0.7 - 1.2 V

32 50 ns

20 40 nC

16

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68717

S09-2433-Rev. C, 16-Nov-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2333CDS

Vishay Siliconix

20

15

10

- Drain Current (A)I

D

5

0

0.0 0.5 1.0 1.5 2.0

V

DS

VGS=5V thru 2.5 V

VGS=1.5V

VGS=1V

- Drain-to-Source Voltage (V)

Output Characteristics

0.10

0.08

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

VGS=1.8V

V

GS

VGS=2.5V

VGS=4.5V

=2V

2.0

1.5

TC= 25 °C

1.0

- Drain Current (A)I

D

0.5

TC= 125 °C

0.0

0.0 0.3 0.6 0.9 1.2 1.5

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

2400

1800

C

iss

1200

C - Capacitance (pF)

600

C

rss

C

oss

TC=- 55 °C

0.00 0 5 10 15 20

On-Resistance vs. Drain Current and Gate Voltage

8

ID=5.1A

6

4

- Gate-to-Source Voltage (V) 2

GS

V

0

0 5 10 15 20 25

Qg- Total Gate Charge (nC)

Document Number: 68717 S09-2433-Rev. C, 16-Nov-09

ID- Drain Current (A)

VDS=3V

VDS=6V

Gate Charge

VDS=9V

0

036912

VDS- Drain-to-Source Voltage (V)

Capacitance

1.6

ID=5.1A

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=2.5V

On-Resistance vs. Junction Temperature

VGS=4.5V

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Vishay Si2333CDS Schematic [ru]