VISHAY Si2328DS Technical data
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Si2328DS
PRODUCT SUMMARY
VDS (V)
100 0.250 @ V
New Product
N-Channel 100-V (D-S) MOSFET
G
S
ID (A)
1
2
TO-236
(SOT-23)
Top View
Si2328DS (D8)*
*Marking Code
D
3
r
DS(on)
(W)
= 10 V 1.5
GS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
b
b
a
_
a
TA= 25_C
TA= 70_C
L = 0.1 mH
TA= 25_C
TA= 70_C
I
I
E
P
I
DM
AS
I
DS
GS
D
AS
1.5 1.15
1.2 0.92
S
D
stg
1.25 0.73
0.80 0.47
100
"20
6
6
1.8 mJ
0.6 A
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
a
t v 5 sec 80 100
Steady State
R
thJA
thJF
130 170
45 55
V
A
W
_C
_C/W
Document Number: 71796
S-05372—Rev. A, 25-Dec-01
www.vishay.com
1
Si2328DS
DD
L
W
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
b
a
a
a
BR)DSS
I
r
DS(on)
GS(th)
GSS
DSS
D(on)
g
fs
SD
g
gs
gd
VGS = 0 V, ID = 1 mA 100
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V "100 nA
VDS = 80 V, VGS = 0 V 1
VDS = 80 V, VGS = 0 V, TJ = 70_C
VDS w 15 V , VGS = 10 V 6 A
VGS = 10 V, ID = 1.5 A 0.195 0.250
VDS = 15 V, ID = 1.5 A 4 S
IS = 1.0 A, VGS = 0 V 0.8 1.2 V
VDS = 50 V, VGS = 10 V, ID = 1.5 A
Limits
2
75
3.3 4.0
0.47
1.45
V
mA
W
nC
Switching
Turn-On Delay Time t
Rise Time t
Turn-Of f Delay Time t
Fall-Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
d(on)
d(off)
r
f
rr
V
= 50 V, R
V
= 50 V, RL = 33
DD
ID ^ 0.2 A, V
GEN
IF = 1.5 A, di/dt = 100 A/ms
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
12
VGS = 10, 9, 8 V
9
6
– Drain Current (A)I
D
3
Output Characteristics Transfer Characteristics
7 V
6 V
5 V
= 33 W
= 10 V, RG = 6 W
12
9
6
– Drain Current (A)I
D
3
TC = 125_C
7 11
11 17
9 15
10 15
50 100 ns
ns
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2
3, 2, 1 V
0
0246810
VDS – Drain-to-Source Voltage (V)
4 V
25_C
0
02468
VGS – Gate-to-Source Voltage (V)
–55_C
Document Number: 71796
S-05372—Rev. A, 25-Dec-01
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