VISHAY SI2308BDS-T1-GE3 Datasheet
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SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
G
D
S
N-Channel 60 V (D-S) MOSFET
Marking Code: Si2308BDS (L8)
PRODUCT SUMMARY
VDS (V) 60
R
max. (Ω) at VGS = 10 V 0.156
DS(on)
R
max. (Ω) at VGS = 4.5 V 0.192
DS(on)
Q
typ. (nC) 2.3
g
a
I
(A)
D
Configuration Single
Si2308BDS
Vishay Siliconix
FEATURES
• Halogen-free according to IEC 61249-2-21
available
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Battery Switch
• DC/DC Converter
2.1
ORDERING INFORMATION
Package TSOP-6 Single
Lead (Pb)-free SI2308BDS-T1-E3
Lead (Pb)-free and halogen-free
SI2308BDS-T1-GE3
SI2308BDS-T1-BE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
= 25 °C
T
C
T
= 70 °C 1.8
Continuous drain current (T
= 150 °C)
J
C
T
= 25 °C 1.9
A
TA = 70 °C 1.5
Pulsed drain current I
T
= 25 °C
Continuous source-drain diode current
Avalanche current
Single pulse avalanche energy E
Maximum power dissipation
C
T
= 25 °C 0.91
A
L = 0.1 mH
T
= 25 °C
C
T
= 70 °C 1.06
C
T
= 25 °C 1.09
A
I
P
TA = 70 °C 0.7
Operating junction and storage temperature range TJ, T
I
DM
I
AS
DS
GS
D
S
AS
D
stg
60
±20
2.3
b,c
b,c
8
1.39
b,c
6
1.8
1.66
b,c
b,c
W
-55 to +150 °C
V
A
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. T
= 25 °C
C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
S21-0226-Rev. D, 08-Mar-2021
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
b, d
t ≤ 5 s R
thJA
thJF
1
For technical questions, contact: pmostechsupport@vishay.com
90 115
60 75
Document Number: 69958
°C/W
Si2308BDS
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
V
temperature coefficient ΔVDS/T
DS
V
temperature coefficient ΔV
GS(th)
Gate-source threshold voltage V
Gate-source leakage I
Zero gate voltage drain current I
On-state drain current
Drain-source on-state resistance
Forward Transconductance
Dynamic
b
a
a
a
Input capacitance C
Reverse transfer capacitance C
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
DS
J
GS(th)/TJ
GS(th)
GSS
DSS
I
V
D(on)
R
DS(on)
g
fs
iss
oss
rss
g
gs
gd
g
d(on)
r
-1015
d(off)
f
d(on)
r
-1117
d(off)
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
Pulse diode forward current
a
Body diode voltage V
Body diode reverse recovery time t
Body diode reverse recovery charge Q
Reverse recovery fall time t
Reverse recovery rise time t
S
I
SM
SD
rr
rr
a
b
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
VDS = 0 V, ID = 250 μA 60 - - V
ID = 250 μA
V
= VGS, ID = 250 μA 1 - 3 V
DS
-55-
--5-
VDS = 0 V, VGS = ± 20 V - - ± 100 nA
V
V
DS
= 60 V, V
DS
= 60 V, V
GS
≥ -5 V, V
DS
V
= 10 V, ID = 1.9 A - 0.130 0.156
GS
V
= 4.5 V, ID = 1.7 A - 0.160 0.192
GS
V
= 15 V, ID = 1.9 A - 5 - S
DS
= 0 V - - 1
GS
= 0 V, TJ = 55 °C - - 10
= 10 V 8 - - A
GS
- 190 -
VDS = 30 V, V
= 0 V, f = 1 MHz
GS
-26-
-15-
V
= 30 V, V
DS
= 10 V, ID = 1.9 A - 4.5 6.8
GS
-2.33.5
V
DS
= 30 V, V
= 4.5 V, ID = 1.9 A
GS
-0.8-
-1-
f = 1 MHz 0.6 2.8 5.6 Ω
-46
V
I
≅ 1.5 A, V
D
= 30 V, RL = 20 Ω
DD
= 10 V, Rg = 1 Ω
GEN
-1015
- 7 10.5
-1523
V
I
= 1.5 A, V
D
= 30 V, RL = 20 Ω
DD
= 4.5 V, Rg = 1 Ω
GEN
-1624
-1117
TC = 25 °C - - 1.39
--8
IS = 1.5 A - 0.8 1.2 V
-1523ns
IF = 1.5 A, dI/dt = 100 A/μs, TJ = 25 °C
-1015nC
-12-
-3-
Vishay Siliconix
mV/°C
μA
Ω
pFOutput capacitance C
nC
ns
A
ns
S21-0226-Rev. D, 08-Mar-2021
2
Document Number: 69958
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0
2
4
6
8
10
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
VGS=10Vthru5V
VGS=2V
VGS=3V
VGS=4V
0.06
0.12
0.18
0.24
0.30
0246810
- On-Resistance (Ω)
R
DS(on)
ID- Drain Current (A)
VGS=10V
VGS=4.5V
0
2
4
6
8
10
012345
I
D
=1.9A
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
V
GS
VDS=48V
VDS=30V
C
rss
0
60
120
180
240
300
0 102030405060
C
iss
VDS- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
VGS=10V,ID=1.9A
VGS=4.5V,ID=1.7A
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Si2308BDS
Vishay Siliconix
4
3
TC=- 55 °C
2
- Drain Current (A)I
D
1
0
0.0 0.7 1.4 2.1 2.8 3.5
V
- Gate-to-Source Voltage (V)
GS
Transfer Characteristics
TC= 125 °C
TC=25 °C
On-Resistance vs. Drain Current
S21-0226-Rev. D, 08-Mar-2021
Gate Charge
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
On-Resistance vs. Junction Temperature
3
For technical questions, contact: pmostechsupport@vishay.com
Capacitance
Document Number: 69958
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