VISHAY SI2308BDS-T1-GE3 Datasheet

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Top View

SOT-23 (TO-236)

1

G

2

S

D
3

N-Channel MOSFET

G

D

S

N-Channel 60 V (D-S) MOSFET

Marking Code: Si2308BDS (L8)

PRODUCT SUMMARY

VDS (V) 60
R

max. (Ω) at VGS = 10 V 0.156

DS(on)

R

max. (Ω) at VGS = 4.5 V 0.192

DS(on)

Q

typ. (nC) 2.3

g

a

I

(A)

D

Configuration Single

Si2308BDS

Vishay Siliconix

FEATURES

• Halogen-free according to IEC 61249-2-21
available

• TrenchFET® power MOSFET

• 100 % Rg and UIS tested

• Material categorization:
for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Battery Switch

• DC/DC Converter

2.1

ORDERING INFORMATION

Package TSOP-6 Single
Lead (Pb)-free SI2308BDS-T1-E3

Lead (Pb)-free and halogen-free

SI2308BDS-T1-GE3
SI2308BDS-T1-BE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V
Gate-source voltage V

= 25 °C

T

C

T

= 70 °C 1.8

Continuous drain current (T

= 150 °C)

J

C

T

= 25 °C 1.9

A

TA = 70 °C 1.5

Pulsed drain current I

T

= 25 °C

Continuous source-drain diode current

Avalanche current
Single pulse avalanche energy E

Maximum power dissipation

C

T

= 25 °C 0.91

A

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C 1.06

C

T

= 25 °C 1.09

A

I

P

TA = 70 °C 0.7

Operating junction and storage temperature range TJ, T

I

DM

I

AS

DS

GS

D

S

AS

D

stg

60

±20

2.3

b,c

b,c

8

1.39

b,c

6

1.8

1.66

b,c

b,c

W

-55 to +150 °C

V

A

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R

Notes

a. T

= 25 °C

C

b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W

S21-0226-Rev. D, 08-Mar-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

b, d

t ≤ 5 s R

thJA

thJF

1

For technical questions, contact: [e-mail]

90 115
60 75

Document Number: 69958

°C/W

Si2308BDS

www.vishay.com

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

V

temperature coefficient ΔVDS/T

DS

V

temperature coefficient ΔV

GS(th)

Gate-source threshold voltage V

Gate-source leakage I

Zero gate voltage drain current I

On-state drain current

Drain-source on-state resistance

Forward Transconductance

Dynamic

b

a

a

a

Input capacitance C

Reverse transfer capacitance C

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

Gate resistance R

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

DS

J

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

oss

rss

g

gs

gd

g

d(on)

r

-1015

d(off)

f

d(on)

r

-1117

d(off)

f

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

Pulse diode forward current

a

Body diode voltage V

Body diode reverse recovery time t

Body diode reverse recovery charge Q

Reverse recovery fall time t

Reverse recovery rise time t

S

I

SM

SD

rr

rr

a

b

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VDS = 0 V, ID = 250 μA 60 - - V

ID = 250 μA

V

= VGS, ID = 250 μA 1 - 3 V

DS

-55-

--5-

VDS = 0 V, VGS = ± 20 V - - ± 100 nA

V

V

DS

= 60 V, V

DS

= 60 V, V

GS

≥ -5 V, V

DS

V

= 10 V, ID = 1.9 A - 0.130 0.156

GS

V

= 4.5 V, ID = 1.7 A - 0.160 0.192

GS

V

= 15 V, ID = 1.9 A - 5 - S

DS

= 0 V - - 1

GS

= 0 V, TJ = 55 °C - - 10

= 10 V 8 - - A

GS

- 190 -

VDS = 30 V, V

= 0 V, f = 1 MHz

GS

-26-

-15-

V

= 30 V, V

DS

= 10 V, ID = 1.9 A - 4.5 6.8

GS

-2.33.5

V

DS

= 30 V, V

= 4.5 V, ID = 1.9 A

GS

-0.8-

-1-

f = 1 MHz 0.6 2.8 5.6 Ω

-46

V

I

≅ 1.5 A, V

D

= 30 V, RL = 20 Ω

DD

= 10 V, Rg = 1 Ω

GEN

-1015

- 7 10.5

-1523

V

I

= 1.5 A, V

D

= 30 V, RL = 20 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

-1624

-1117

TC = 25 °C - - 1.39

--8

IS = 1.5 A - 0.8 1.2 V

-1523ns

IF = 1.5 A, dI/dt = 100 A/μs, TJ = 25 °C

-1015nC

-12-

-3-

Vishay Siliconix

mV/°C

μA

Ω

pFOutput capacitance C

nC

ns

A

ns

S21-0226-Rev. D, 08-Mar-2021

2

Document Number: 69958

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

2

4

6

8

10

012345

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

VGS=10Vthru5V

VGS=2V

VGS=3V

VGS=4V

0.06

0.12

0.18

0.24

0.30

0246810

- On-Resistance (Ω)

R

DS(on)

ID- Drain Current (A)

VGS=10V

VGS=4.5V

0

2

4

6

8

10

012345

I

D

=1.9A

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

VDS=48V

VDS=30V

C

rss

0

60

120

180

240

300

0 102030405060

C

iss

VDS- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

oss

0.5

0.8

1.1

1.4

1.7

2.0

- 50 - 25 0 25 50 75 100 125 150

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance

R

DS(on)

VGS=10V,ID=1.9A

VGS=4.5V,ID=1.7A

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

Si2308BDS

Vishay Siliconix

4

3

TC=- 55 °C

2

- Drain Current (A)I

D

1

0

0.0 0.7 1.4 2.1 2.8 3.5

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

TC= 125 °C

TC=25 °C

On-Resistance vs. Drain Current

S21-0226-Rev. D, 08-Mar-2021

Gate Charge

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Junction Temperature

3

For technical questions, contact: [e-mail]

Capacitance

Document Number: 69958

1.2

1.5

1.8

2.1

2.4

- 50 - 25 0 25 50 75 100 125 150

I

D

= 250 µA

(V)V

GS(th)

TJ- Temperature (°C)

0.10

0.15

0.20

0.25

0.30

0.35

345678910

- On-Resistance (Ω)R

DS(on)

VGS- Gate-to-Source Voltage (V)

TJ= 25 °C

TJ= 125 °C

ID=1.9A

10

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

Si2308BDS

Vishay Siliconix

TJ= 150 °C

1

- Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

Threshold Voltage

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

8

)W

6

(
rewo

P

4

2

0

0.1 0.01

T A = 25 °C

Single Pulse

1 600 10

Time (s)

Single Pulse Power, Junction-to-Ambient

100

S21-0226-Rev. D, 08-Mar-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

10

Limited by R

1

- Drain Current (A)I

0.1

D

Single Pulse

0.01

0.1 1 10

* V

*

DS(on)

TA= 25 °C

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

BVDSS Limited

DS(on)

is specified

100 µs

1ms

10 ms

100 ms

1s,10s
DC

100

Safe Operating Area

4

For technical questions, contact: [e-mail]

Document Number: 69958

0.0

0.3

0.6

0.9

1.2

0 25 50 75 100 125 150

T

A

- Ambient Temperature (°C)

Power (W)

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

3.0

2.4

1.8

1.2

- Drain Current (A)

D

I

0.6

0.0
0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Current Derating

Si2308BDS

Vishay Siliconix

a

2.0

1.6

1.2

Power (W)

0.8

0.4

0.0
0 25 50 75 100 125 150

T

- Case Temperature (°C)

C

Power Junction-to-Case Power Junction-to-Ambient

Note

a. The power dissipation P

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

D

package limit

S21-0226-Rev. D, 08-Mar-2021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

5

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 69958

10

-3

10

-2

1 10 600 10

-1

10

-4

100

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

t n e i s n a r T e v i t c e f f E d e z i l a m r o N

e c n a d e p m I l a m r e h T

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 130 °C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface Mounted

P

DM

10

-3

10

-2

1 10 10

-1

10

-4

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

t n e i s n a r T e v

i

t c e f f E d e z i l a m

r
o N

e c n a d e

p
m I

l a

m
r

e
h T

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Si2308BDS

Vishay Siliconix

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69958

.

S21-0226-Rev. D, 08-Mar-2021

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6

Document Number: 69958

SOT-23 (TO-236): 3-LEAD

b

3

1

Package Information

Vishay Siliconix

E

E

1

2

S

A

A

2

A

1

Dim

A 0.89 1.12 0.035 0.044

A

1

A

2

b 0.35 0.50 0.014 0.020

c 0.085 0.18 0.003 0.007

D 2.80 3.04 0.110 0.120

E 2.10 2.64 0.083 0.104

E

1

e 0.95 BSC 0.0374 Ref

e

1

L 0.40 0.60 0.016 0.024

L

1

S 0.50 Ref 0.020 Ref

q 3°8°3°8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

e

e

1

D

0.10 mm

Seating Plane

C

0.004"

C

C

q

L

L

1

MILLIMETERS INCHES

Min Max Min Max

0.01 0.10 0.0004 0.004

0.88 1.02 0.0346 0.040

1.20 1.40 0.047 0.055

1.90 BSC 0.0748 Ref

0.64 Ref 0.025 Ref

0.25 mm

Gauge Plane

Seating Plane

Document Number: 71196
09-Jul-01

www.vishay.com

1

RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826

Vishay Siliconix

0.106
(2.692)

0.037

(0.950)

0.053

(1.341)

0.097

(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.022

(0.559)

0.049

0.029

(1.245)

(0.724)

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Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25

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Revision: 01-Jan-2022

1

Document Number: 91000