Vishay Si1905BDH Schematic

New Product

Dual P-Channel 1.8-V (G-S) MOSFET

Si1905BDH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.542 at V

- 8

1.2 at V

(Ω)

DS(on)

= - 4.5 V - 0.63

GS

= - 2.5 V - 0.52

GS

= - 1.8 V - 0.20

GS

(Typ)

I

(A)

D

Q

g

10.5 nC0.798 at V

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

•

Load Switch for Portable Devices

RoHS

COMPLIANT

SOT-363

SC-70 (6-LEADS)

S

1

G

2

1

D

3

2

Top View

Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free)

6

D

1

Marking Code

5

G

2

S

4

2

DJ XX

Par t # Code

YY

Lot Traceability and Date Code

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

TC = 25 °C

= 25 °C

T

A

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 8

± 8

- 0.63

- 0.50

a, b

- 0.58

a, b

- 0.47

- 1.8

- 0.30

a, b

- 0.25

0.357

- 0.301

a, b

0.301

a, b

0.95

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t ≤ 5 s

Steady State 400 460

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 400 °C/W.

Document Number: 74638 S-72340-Rev. B, 05-Nov-07

R

thJA

R

thJF

360 415

°C/W

300 350

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1

New Product

Si1905BDH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

R

t

d(on)

t

d(off)

gd

g

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = - 8 V

V

= - 8 V, V

DS

V

= - 8 V, V

DS

≤ 5 V, V

DS

V

= - 4.5 V, ID = - 0.58 A

GS

V

= - 2.5 V, ID = - 0.47 A

GS

V

= - 1.8 V, ID = - 0.2 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 4 V, ID = - 0.58 A

VDS = - 4 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 0.58 A

GS

f = 1 MHz 6.3 Ω

V

= - 4 V, RL = 8.7 Ω

DD

≅ - 0.46 A, V

I

D

= - 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 1.4 A, V

GS

= 0 V

IF = - 1.4 A, di/dt = 100 A/µs, TJ = 25 °C

- 8 V

7.15

- 1.66

mV/°C

- 0.45 - 1.0 V

- 100 nA

- 1

- 10

- 1.8 A

0.450 0.542

0.655 0.798

0.950 1.2

1.2 S

62

30

12

1.0 1.5

0.19

0.20

914

40 60

50 75

60 90

- 0.30

- 1.8

- 0.8 - 1.2 V

25 38 ns

711nC

9

16

µA

Ω

pFOutput Capacitance

nCGate-Source Charge

ns

A

ns

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Document Number: 74638

S-72340-Rev. B, 05-Nov-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1905BDH

Vishay Siliconix

- Drain Current (A)I

D

- On-Resistance (Ω)r

DS(on)

1.8

1.5

1.2

0.9

0.6

0.3

0

0 0.6 1.2 1.8 2.4 3.0

- Drain-to-Source Voltage (V)

V

DS

VGS = 5 V thru 2.5 V

VGS = 2 V

VGS = 1.5 V

Output Characteristics

2.0

VGS = 1.8 V

1.6

1.2

VGS = 2.5 V

0.8

0.4

VGS = 4.5 V

0.5

0.4

0.3

0.2

- Drain Current (A)I

D

0.1

0

0 0.6 1.2 1.8 2.4

TJ = 25 °C

TJ = 125 °C

TJ = - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

100

80

C

60

40

C - Capacitance (pF)

20

iss

C

oss

0

0 0.3 0.6 0.9 1.2 1.5 1.8

On-Resistance vs. Drain Current and Gate Voltage

5

I

= 0.57 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0 0.3 0.6 0.9 1.2

Document Number: 74638 S-72340-Rev. B, 05-Nov-07

ID - Drain Current (A)

VDS = 4 V

VDS = 6.4 V

Qg - Total Gate Charge (nC)

Gate Charge

0

02468

1.8

1.5

1.2

0.9

(Normalized)

- On-Resistance

0.6

DS(on)

r

0.3

0

- 50 - 25 0 25 50 75 100 125 150

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V, ID = 0.57 A V

= 2.5 V, ID = 0.47 A

GS

VGS = 1.8 V, ID = 0.06 A

TJ- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Vishay Si1905BDH Schematic [ru]