Vishay Si1902DL Schematic

Dual N-Channel 20-V (D-S) MOSFET

e

A

X

Lot T

Y

Si1902DL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.385 at V

20

0.630 at V

(Ω)I

DS(on)

= 4.5 V 0.70

GS

= 2.5 V 0.54

GS

D

(A)

FEATURES

• TrenchFET® Power MOSFETS: 2.5 V Rated

SOT-363

SC-70 (6-LEADS)

S

1

G

2

1

D

3

2

Top V

iew

Ordering Information: Si1902DL-T1 (with Tape and Reel)

Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)

D

6

1

5

G

2

S

4

2

M arking Cod

Marking Code

P

X

PA

YY

Y

Lot Traceability and Date Code

Part # Code

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

TA = 25 °C

= 85 °C 0.50 0.48

T

A

a

T

= 25 °C

A

T

= 85 °C 0.16 0.14

A

Operating Junction and Storage Temperature Range T

DS

GS

I

D

I

DM

I

S

P

D

, T

J

stg

0.70 0.66

0.25 0.23

0.30 0.27

20

±12

1.0

W

- 55 to 150 °C

V

A

Pb-free

Available

RoHS*

COMPLIANT

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain)

t ≤ 5 sec

Steady State 400 460

R

Steady State R

Notes

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 71080 S-51415–Rev. H, 03-Apr-06

thJA

thJF

360 415

°C/W

300 350

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1

Si1902DL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

V

SD

Total Gate Charge Qg

Gate-Source Charge Q

Gate-Drain Charge Q

Tur n - O n Del ay T i m e t

Rise Time t

Turn-Off DelayTime t

Fall Time t

Source-Drain Reverse Recovery Time

gs

gd

d(on)

r

d(off)

f

t

rr

V

DS

0.30

I

10 20

D

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

= VGS, ID = 250 µA 0.6 1.5 V

DS

VDS = 0 V, VGS = ± 12 V ± 100

V

= 16 V, VGS = 0 V 1

DS

V

DS

= 16 V

DS

V

GS

V

GS

V

DS

= 0 V, TJ = 85°C 5

GS

≥ 5 V, V

= 4.5 V 1.0 A

GS

= 4.5 V, ID = 0.66 A 0.320 0.385

= 2.5 V, ID = 0.40 A 0.560 0.630

= 10 V, ID = 0.66 A 1.5 S

IS = 0.23 A, VGS = 0 V 0.8 1.2 V

0.8 1.2

= 10 V, V

= 4.5 V, ID = 0.66 A

GS

0.06

10 20

V

= 10 V, RL = 20 Ω

DD

≅ 0.5 A, V

= 4.5 V, RG = 6 Ω

GEN

16 30

10 20

IF = 0.23 A, di/dt = 100 A/µs 20 40

nA

µA

Ω

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

1.0

VGS = 5 thru 2.5 V

0.8

0.6

0.4

– Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

– Drain-to-Source Voltage (V)

V

DS

1.5 V

Output Characteristics

2 V

1 V

1.0

0.8

0.6

0.4

– Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5

V

TC = 125 °C

25 °C

– Gate-to-Source Voltage (V)

GS

- 55 °C

Transfer Characteristics

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Document Number: 71080

S-51415–Rev. H, 03-Apr-06

1.0

)

Si1902DL

Vishay Siliconix

TYPICAL CHARACTERISTICS T

)

0.8

Ω

V

= 2.5 V

0.6

0.4

– On-Resistance (r

DS(on)

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0

On-Resistance vs. Drain Current

5

V

= 10 V

DS

= 0.66 A

I

D

4

3

GS

I

– Drain Current (A)

= 25 °C, unless otherwise noted

A

V

= 4.5 V

GS

C – Capacitance (pF)

100

80

C

60

40

C

oss

20

C

rss

0

0 4 8 121620

VDS – Drain-to-Source Voltage (V)

iss

Capacitance

1.6

V

= 4.5 V

GS

= 0.66 A

I

1.4

1.2

D

– Gate-to-Source Voltage (V)

GS

V

– Source Current (A)I

S

2

1

0

0.0 0.2 0.4 0.6 0.8

Qg – Total Gate Charge (nC)

Gate Charge

1

T

= 150 °C

J

T

= 25 °C

J

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

– Source-to-Drain Voltage (V

Surge-Drain Diode Forward Voltage

– On-Resistancer

DS(on)

Ω)

– On-Resistance (r

DS(on)

1.0

(Normalized)

0.8

0.6

- 50 - 25

025 50 7

– Junction T emperature (°C)

T

J

5 100 125 150

On-Resistance vs. Junction Temperature

1.0

0.8

I

= 0.66 A

0.6

0.4

0.2

0.0 012345

VGS – Gate-to-Source Voltage (V)

D

On-Resistance vs. Gate-to-Source Voltage

Document Number: 71080 S-51415–Rev. H, 03-Apr-06

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Vishay Si1902DL Schematic [ru]