VISHAY Si1869DH Technical data
Si1869DH
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Load Switch with Level-Shift
PRODUCT SUMMARY
V
(V) R
DS2
0.165 at V
1.8 to 20
0.222 at V
0.303 at V
DESCRIPTION
The Si1869DH includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1869DH operates on
supply lines from 1.8 V to 20 V, and can drive loads up to
1.2 A.
(Ω)I
DS(on)
= 4.5 V ± 1.2
IN
= 2.5 V ± 1.0
IN
= 1.8 V ± 0.7
IN
D
(A)
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
• ESD Protected: 2000 V On Input Switch,
V
ON/OFF
• 165 mΩ Low R
• 1.8 to 20 V Input
• 1.5 to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift for Portable Devices
®
Power MOSFETs: 1.8 V Rated
DS(on)
APPLICATION CIRCUITS
Si1869DH
V
ON/OFF
R2
IN
R1
C
i
4
Q2
6
5
Q1
1
R2
2, 3
6
40
t
35
IL = 1 A
(Time µs)
30
25
20
15
10
5
0
02468 10
= 3 V
V
ON/OFF
C
= 10 µF
i
= 1 µF
C
o
t
d(off)
t
r
R2 (kΩ)
Note: For R2 switching variations with other VIN/R1
combinations see Typical Characteristics
V
OUT
C1
C
o
LOAD
GND
f
t
d(on)
Switching Variation
R2 at V
= 2.5 V, R1 = 20 kΩ
IN
COMPONENTS
R1 Pull-Up Resistor Typical 10 kΩ to 1 MΩ*
R2 Optional Slew-Rate Control Typical 0 to 100 kΩ*
C1 Optional Slew-Rate Control Typical 1000 pF
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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Si1869DH
SC
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Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
70-6
To p View
R2
D2
D2
1
2
3
6
5
4
R1, C1
ON/OFF
S2
Marking Code
VC XX
YY
Lot T raceability
and Date Code
Part # Code
S2
ON/OFF
Si1869DH
4
5
Q2
Q1
2, 3
D2
6
R1,
C1
Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free)
Si1869DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage (D2-S2) V
ON/OFF Voltage V
Load Current
Continuous Intrinsic Diode Conduction
Maximum Power Dissipation
a
Continuous
a
a, b
b, c
Operating Junction and Storage Temperature Range T
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)
DS
IN
ON/OFF
I
L
I
S
P
D
, T
J
stg
ESD
- 20
20
8
± 1.2
± 3
- 0.4
1.0
- 55 to 150
2
VInput Voltage V
APulsed
W
°C
kV
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (Continuous Current)
a
Maximum Junction-to-Foot (Q2) R
R
thJA
thJF
100 125
44 55
°C/W
SPECIFICATIONS TJ = 25 °C unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Reverse Leakage Current I
Diode Forward Voltage V
FL
SD
VIN = 8 V, V
IS = - 0.4 A 0.4 0.6 1.1 V
ON Characteristics
Input Voltage Range V
Drain to Source Breakdown Voltage
On-Resistance (P-Channel) at 1 A R
On-State (P-Channel) Drain-Current I
Notes:
IN
V
DS
DS(on)
D(on)
VGS = 0 V, ID = - 250 µA- 20
V
= 1.5 V, VIN = 4.5 V, ID = 1.2 A 0.132 0.165
ON/OFF
= 1.5 V, VIN = 2.5 V, ID = 1.0 A 0.177 0.222
ON/OFF
= 1.5 V, VIN = 1.8 V, ID = 0.7 A 0.242 0.303
V
ON/OFF
V
≤ 0.2 V, VIN = 5 V, V
IN-OUT
V
≤ 0.3 V, VIN = 3 V, V
IN-OUT
a. Surface mounted on FR4 board.
= 20 V, V
b. V
IN
c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
= 8 V, TA = 25 °C.
ON/OFF
= 0 V 1 µA
ON/OFF
1.8 20
= 1.5 V 1
ON/OFF
= 1.5 V 1
ON/OFF
V
ΩV
A
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Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
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