Vishay Si1563EDH Schematic

New Product

Si1563EDH

Vishay Siliconix

Complementary 20-V (D-S) Low-Threshold MOSFET

PRODUCT SUMMARY

VDS (V) r

0.280 at V

6

5

4

0.360 at V

0.450 at V

0.490 at V

0.750 at V

1.10 at V

D

1

G

2

S

2

N-Channel 20

P-Channel - 20

SOT-363

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

Top View

Ordering Information:

Si1563EDH-T1 Si1563EDH-T1-E3 (Lead (Pb)-free)

DS(on)

GS

Marking Code

(Ω)

= 4.5 V

= 2.5 V

= 1.8 V

= - 4.5 V

= - 2.5 V

= - 1.8 V

EA XX

YY

Lot Traceability and Date Code

Part # Code

I

(A)

D

1.28

1.13

1.0

- 1.0

- 0.81

- 0.67

FEATURES

• TrenchFET® Power MOSFETS: 1.8 V Rated

• ESD Protected: 2000 V

• Thermally Enhanced SC-70 Package

APPLICATIONS

• Load Switching

• PA Switch

• Level Switch

D

1

1 k

G

1

G

N-Channel

2

S

1

3 k

P-Channel

Pb-free

Available

RoHS*

COMPLIANT

S

2

D

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

N-Channel P-Channel

Parameter Symbol 5 s Steady State 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

T

= 25 °C

Continuous Drain Current (T

= 150 °C)

J

A

T

= 85 °C

A

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

TA = 25 °C

= 85 °C

T

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

1.28 1.13 - 1.0 - 0.88

0.92 0.81 - 0.72 - 0.63

0.61 0.48 - 0.61 - 0.48

0.74 0.57 0.30 0.57

0.38 0.30 0.16 0.3

stg

20 - 20

± 12 ± 12

4.0 - 3.0

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

R

thJA

R

thJF

130 170

°C/WSteady State 170 220

80 100

Document Number: 71416 S-80257-Rev. C, 04-Feb-08

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New Product

Si1563EDH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

a

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

SD

Q

t

d(on)

t

d(off)

t

fs

gs

gd

r

f

g

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

= VGS, ID = 100 µA

DS

V

= VGS, ID = - 100 µA

DS

VDS = 0 V, VGS = ± 4.5 V

= 0 V, VGS = ± 12 V

V

DS

V

= 16 V, V

DS

V

= - 16 V, V

DS

V

= 16 V, V

DS

V

= - 16 V, V

DS

≥ 5 V, V

V

DS

V

≤ - 5 V, V

DS

V

= 4.5 V, ID = 1.13 A

GS

V

= - 4.5 V, ID = - 0.88 A

GS

V

= 2.5 V, ID = 0.99 A

GS

V

= - 2.5 V, ID = - 0.71 A

GS

V

= 1.8 V, ID = 0.20 A

GS

V

= - 1.8 V, ID = - 0.20 A

GS

VDS = 10 V, ID = 1.13 A

V

= - 10 V, ID = - 0.88 A

DS

IS = 0.48 V, V

I

= - 0.48 V, V

S

N-Channel

V

= 10 V, V

DS

GS

P-Channel

V

= - 10 V, V

DS

GS

N-Channel

V

= 10 V, RL = 20 Ω

DD

≅ 0.5 A, V

I

D

GEN

P-Channel

V

= - 10 V, RL = 20 Ω

DD

I

≅ - 0.5 A, V

D

GEN

= 0 V

GS

= 0 V

GS

= 0 V, TJ = 85 °C

GS

= 0 V, TJ = 85 °C

GS

= 4.5 V

GS

= - 4.5 V

GS

= 0 V

GS

= 0 V

GS

= 4.5 V, ID = 1.13 A

= - 4.5 V, ID = - 0.88 A

= 4.5 V, Rg = 6 Ω

= - 4.5 V, Rg = 6 Ω

N-Ch 0.45

P-Ch - 0.45

N-Ch ± 1

P-Ch ± 1

N-Ch ± 10

P-Ch ± 10

N-Ch 1

P-Ch - 1

N-Ch 5

P-Ch - 5

N-Ch 2

P-Ch - 2

N-Ch 0.220 0.280

P-Ch 0.400 0.490

N-Ch 0.281 0.360

P-Ch 0.610 0.750

N-Ch 0.344 0.450

P-Ch 0.850 1.10

N-Ch 2.6

P-Ch 1.5

N-Ch 0.8 1.2

P-Ch - 0.8 - 1.2

N-Ch 0.65 1.0

P-Ch 1.2 1.8

N-Ch 0.2

P-Ch 0.3

N-Ch 0.23

P-Ch 0.3

N-Ch 45 70

P-Ch 150 230

N-Ch 85 130

P-Ch 480 720

N-Ch 350 530

P-Ch 840 1200

N-Ch 210 320

P-Ch 850 1200

V

µA

mA

µA

A

Ω

S

V

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 71416

S-80257-Rev. C, 04-Feb-08

New Product

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1563EDH

Vishay Siliconix

- Gate Current (mA)I

10

8

6

4

GSS

2

0

048 12 16

VGS- Gate-to-Source Voltage (V)

Gate-Current vs. Gate-Source Voltage

2.0

VGS = 5 thru 2 V

1.5

1.0

1.5 V

- Gate Current (µA)I

GSS

10000

1000

100

10

0.1

0.01

0.001

TJ = 150 °C

1

TJ = 25 °C

0 391215

V

6

- Gate-to-Source Voltage (V)

GS

Gate-Current vs. Gate-Source Voltage

2.0

TC = - 55 °C

1.5

1.0

25 °C

125 °C

- Drain Current (A)I

D

- On-Resistance (Ω)r

DS(on)

0.5

1 V

0.0 01234

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.6

0.5

0.4

0.3

0.2

0.1

0.0

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

0.0 0.5 1.0 1.5 2.0

Drain Current (A)

-

D

I

0.5

0.0

0.0 0.5 1.0 1.5 2.0

140

120

100

80

60

Capacitance (pF) C-

40

20

0

048 12 16 20

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

C

oss

C

rss

C

iss

On-Resistance vs. Drain Current

Document Number: 71416 S-80257-Rev. C, 04-Feb-08

ID- Drain Current (A)

VDS- Drain-to-Source Voltage (V)

Capacitance

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Vishay Si1563EDH Schematic [ru]