Vishay Si1551DL Schematic [ru]

PRODUCT SUMMARY

V

C/W

Si1551DL

Vishay Siliconix

Complementary 20-V (D-S) MOSFET

V

(V) r

DS

1.9 @ VGS = 4.5 V 0.30

N-Channel 20 3.7 @ VGS = 2.7 V 0.22 0.72

4.2 @ VGS = 2.5 V 0.21

0.995 @ VGS = −4.5 V −0.44

P-Channel −20

1.600 @ VGS = −2.7 V −0.34

1.800 @ VGS = −2.5 V −0.32

DS(on)

(W) I

(A) Qg (Typ)

D

0.52

SOT-363

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

Top View

Ordering Information: Si1551DL-T1

Si1551DL-T1—E3 (Lead (Pb)-Free)

6

D

1

Marking Code

5

G

2

S

4

2

RD XX

YY

Lot Traceability
and Date Code

Part # Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

N-Channel P-Channel

Parameter Symbol

Drain-Source Voltage V

Gate-Source Voltage V

a

TA = 25_C

TA = 85_C

TA = 25_C

TA = 85_C

P

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

I

DM

I

DS

GS

D

S

D

stg

5 secs Steady State 5 secs Steady State

20 −20

"12

0.30 0.29 −0.44 −0.41

0.22 0.21 −0.31 −0.30

0.6 −1.0

0.25 0.23 −0.25 −0.23

0.30 0.27 0.30 0.27

0.16 0.14 0.16 0.14

−55 to 150 _C

Unit

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71255
S-42353—Rev. C, 20-Dec-04

a

t v 5 sec

Steady State

R

thJA

thJF

360 415

400 460

300 350

_C/W

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1

Si1551DL

G

Th

ld Vol

V

V

T

l G

Ch

Q

N-Channel

C

VDD = 10 V, RL = 20 W

g

I

D

^ 0.5 A, V

GEN

= 4.5 V, Rg = 6 W

Source-Drain

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

ate

resho

tage

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

a

a

a

a

Dynamicb

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

VDS = VGS, I

VDS = VGS, I

VDS = 0 V, VGS = "12 V

= 250 mA N-Ch 0.6 1.5

D

= −250 mA P-Ch −0.6 −1.5

D

N-Ch "100

P-Ch "100

nA

VDS = 20 V, VGS = 0 V N-Ch 1

VDS = −20 V, VGS = 0 V P-Ch −1

VDS = 20 V, VGS = 0 V, TJ = 85_C N-Ch 5

mA

VDS = −20 V, VGS = 0 V, TJ = 85_C P-Ch −5

VDS w 5 V, VGS = 4.5 V N-Ch 0.6

VDS p −5 V, VGS = −4.5 V P-Ch −1.0

A

VGS = 4.5 V, ID = 0.29 A N-Ch 1.55 1.9

VGS = −4.5 V, ID = −0.41 A P-Ch 0.850 0.995

VGS = 2.7 V, ID = 0.1 A N-Ch 2.8 3.7

VGS = −2.7 V, ID = −0.25 A P-Ch 1.23 1.600

W

VGS = 2.5 V, ID = 0.1 A N-Ch 3.0 4.2

VGS = −2.5 V, ID = −0.25 A P-Ch 1.4 1.800

fs

VDS = −10 V, ID = −0.41 A P-Ch 0.8

IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2

VDS = 10 V, ID = 0.29 A N-Ch 0.3

SD

IS = −0.23 A, VGS = 0 V P-Ch −0.8 −1.2

S

V

ota

ate

arge

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain
Reverse Recovery Time

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

300 ms, duty cycle v 2%.

g

V

= 10 V, VGS = 4.5 V, ID = 0.29 A

gs

gd

d(on)

r

d(off) V

f

t

rr

DS

V

= −10 V, VGS = −4.5 V, ID = −0.41 A

DS

ID ^ 0.5 A, V

I

^ −0.5 A, V

D

IF = 0.23 A, di/dt = 100 A/ms N-Ch 20 40

IF = −0.23 A, di/dt = 100 A/ms P-Ch 25 40

N-Channel

P-Channel

N-Channel

V

= 10 V, R

= 4.5 V, Rg = 6 W

GEN

P-Channel

= −10 V, RL = 20 W

DD

= −4.5 V, Rg = 6 W

GEN

= 20 W

N-Ch 0.72 1.5

P-Ch 0.52 1.8

N-Ch 0.22

P-Ch 0.11

N-Ch 0.13

P-Ch 0.14

N-Ch 23 40

P-Ch 7.5 15

N-Ch 30 60

P-Ch 20 40

N-Ch 10 20

P-Ch 8.5 17

N-Ch 15 30

P-Ch 12 24

n

ns

conditions for extended periods may affect device reliability.

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Document Number: 71255

S-42353—Rev. C, 20-Dec-04

Si1551DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

0.6

0.5

0.4

0.3

0.2

− Drain Current (A)I

D

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V)

VGS = 5 thru 3.5 V

On-Resistance vs. Drain Current

6

5

W )

VGS = 2.5 V

4

VGS = 2.7 V

3

− On-Resistance (r

2

DS(on)

1

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

Output Characteristics Transfer Characteristics

2.5 V

1.5 V

VGS = 4.5 V

3 V

2 V

0.6

0.5

0.4

0.3

0.2

− Drain Current (A)I

D

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

TC = −55_C

25_C

125_C

Capacitance

100

80

C

60

40

C − Capacitance (pF)

20

C

0

048121620

C

oss

rss

iss

5

VDS = 10 V
I

= 0.29 A

D

4

3

2

− Gate-to-Source Voltage (V)

GS

1

V

0

0.0 0.2 0.4 0.6 0.8

Qg − Total Gate Charge (nC)

Document Number: 71255
S-42353—Rev. C, 20-Dec-04

− Drain Current (A)

I

D

Gate Charge

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.8

VGS = 4.5 V
I

= 0.29 A

1.6

1.4

1.2

− On-Resiistance
(Normalized)

1.0

DS(on)

r

0.8

0.6

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

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