Vishay Si1499DH Schematic

New Product

P-Channel 1.2-V (G-S) MOSFET

Si1499DH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.078 at V

0.095 at V

- 8

0.115 at V

0.153 at V

0.424 at V

(Ω)

DS(on)

= - 4.5 V - 1.6

GS

= - 2.5 V - 1.6

GS

= - 1.8 V - 1.6

GS

= - 1.5 V - 1.6

GS

= - 1.2 V

GS

I

D

- 1.6

(A)

c

b

Qg (Typ)

10.5 nC

FEATURES

• TrenchFET® Power MOSFET

• Ultra-Low On-Resistance

APPLICATIONS

• Load Switch for Portable Devices

- Guaranteed Operation at VGS = 1.2 V Critical for Optimized Design and Longer

RoHS

COMPLIANT

Battery Life

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top V i ew

Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

Marking Code

BI XX

Par t # Code

YY

Lot Traceability and Date Code

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

TC = 25 °C

TA = 25 °C

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 8

± 5

c

-1.6

c

- 1.6

a, b, c

- 1.6

a, b, c

- 1.6

c

- 6.5

c

- 1.6

a, b

- 1.3

2.78

1.78

a, b

2.5

a, b

1

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 73338 S-80579-Rev. E, 17-Mar-08

R

thJA

R

thJF

60 80

34 45

°C/W

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1

Si1499DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

V

= VGS, ID = ± 5 mA

DS

VDS = 0 V, VGS = ± 5 V

V

= - 8 V, V

DS

V

= - 8 V, V

DS

V

GS

≤ 5 V, V

DS

= - 4.5 V, ID = - 2.0 A

GS

= - 2.5 V, ID = - 1.9 A

GS

= - 1.8 V, ID = - 0.8 A

GS

= - 1.5 V, ID = - 0.5 A

GS

= - 1.2 V, ID = - 0.100 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 4 V, ID = - 2.0 A

VDS = - 4 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 1.6 A

GS

f = 1 MHz 9.5 Ω

V

= - 4 V, RL = 2 Ω

DD

≅ - 2 A, V

I

D

≅ - 2 A, V

I

D

V

= - 4.5 V, Rg = 1 Ω

GEN

= - 4 V, RL = 2 Ω

DD

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 2.4 A, V

GS

= 0 V

IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C

- 8 V

- 9

- 2.2

mV/°C

- 0.35 - 0.8

- 0.55

± 100 nA

- 1

- 10

- 6.5 A

0.0622 0.078

0.078 0.095

0.094 0.115

0.118 0.153

0.424

8S

650

220

122

10.5 16

1.3

1.9

914

40 60

50 75

60 90

815

40 60

46 70

60 90

- 1.6

- 6.5

- 0.7 - 1.2 V

25 38 ns

711nC

9

16

V

µA

Ω

pFOutput Capacitance

nCGate-Source Charge

ns

A

ns

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Document Number: 73338

S-80579-Rev. E, 17-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1499DH

Vishay Siliconix

10

8

6

- Drain Current (A)I

4

D

2

0

0.0 0.5 1.0 1.5 2.0

V

Drain-to-Source Voltage (V)

-

DS

VGS = 5 thru 2 V

Output Characteristics

0.25

0.20

0.15

VGS = 1.5 V

VGS = 1.8 V

1.5 V

1 V

10

TC = - 55 °C

8

6

- Drain Current (A)I

4

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5

- Gate-to-Source Voltage (V)

V

GS

25 °C

Transfer Characteristics

1000

800

C

iss

600

125 °C

- On-Resistance (mΩ)

0.10

DS(on)

R

0.05

0.00 0246810

I

- Drain Current (A)

D

VGS = 2.5 V

VGS = 4.5 V

On-Resistance vs. Drain Current and Gate Voltage

5

ID = 2 A

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

024681012

VDS = 4 V

VDS = 5.6 V

Qg - Total Gate Charge (nC)

Gate Charge

400

C - Capacitance (pF)

200

0

012345678

C

rss

VDS - Drain-to-Source Voltage (V)

C

oss

Capacitance

1.6

ID = 2 A

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

VGS = 4.5 V

On-Resistance vs. Junction Temperature

VGS = 2.5 V

Document Number: 73338 S-80579-Rev. E, 17-Mar-08

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Vishay Si1499DH Schematic [ru]