Vishay SI1473DH Schematic

New Product

P-Channel 30-V (D-S) MOSFET

Si1473DH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 30

0.100 at V

0.145 at V

(Ω)

DS(on)

= - 10 V - 1.6

GS

= - 4.5 V - 1.6

GS

c

I

(A)

D

Qg (Typ)

4.1 nC

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch for Portable Devices

RoHS

COMPLIANT

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top V i ew

Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

Marking Code

BJ XX

Par t # Code

YY

Lot Traceability and Date Code

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

TC = 25 °C

TA = 25 °C

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 30

± 20

c

-1.6

c

- 1.6

a, b, c

- 1.6

a, b, c

- 1.6

c

- 6.5

c

- 1.6

a, b, c

- 1.6

2.78

1.78

a, b

2.5

a, b

1

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 sec

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 sec. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 74438 S-70308-Rev. B, 12-Feb-07

R

thJA

R

thJF

60 80

34 45

°C/W

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1

New Product

Si1473DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= - 30 V, V

DS

= - 30 V, V

V

GS

V

GS

≤ 5 V, V

DS

= - 10 V, ID = - 2.0 A

= - 4.5 V, ID = - 1.6 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 10 V, ID = - 2.0 A

VDS = - 15 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 2.5 A

GS

f = 1 MHz 9.2 Ω

V

= - 15 V, RL = 7.5 Ω

DD

≅ - 2 A, V

I

D

V

≅ - 2 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 15 V, RL = 7.5 Ω

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 2 A, V

GS

= 0 V

IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C

- 30 V

- 32

4

mV/°C

- 1 - 3 V

- 100 nA

- 1

- 10

µA

- 3 A

0.084 0.100

0.120 0.145

6S

365

68

51

4.1 6.2

1.2

nCGate-Source Charge

1.7

24 40

60 100

25 40

15 25

48

10 20

15 25

612

- 1.6

- 6.5

- 0.85 - 1.2 V

23 35 ns

15 23 nC

9

14

Ω

pFOutput Capacitance

ns

A

ns

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Document Number: 74438

S-70308-Rev. B, 12-Feb-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1473DH

Vishay Siliconix

)

- On-Resistance (r

DS(on)

10

8

6

4

- Drain Current (A)I D

2

0

0.0 0.6 1.2 1.8 2.4 3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

4 V

Output Characteristics

0.20

0.16

VGS = 4.5 V

0.12

VGS = 10 V

0.0

8

0.04

3 V

2.0

1.6

1.2

TJ = 125 °C

0.8

- Drain Current (A)I D

0.4

0.0 123 45

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

600

480

C

iss

360

240

C - Capacitance (pF)

120

C

oss

0.00

0.0 1.6 3.2 4.8 6.4 8.0

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 2.5 A

8

6

4

- Gate-to-Source Voltage (V)

2

GS

V

0

02468 10

Document Number: 74438 S-70308-Rev. B, 12-Feb-07

ID - Drain Current (A)

VDS = 10 V

VDS = 15 V

VDS = 20 V

Qg - Total Gate Charge (nC)

Gate Charge

- On-Resistance

DS(on)

r

C

rss

0

061218 24 30

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

ID = 2 A

1.4

1.2

1.0

(Normalized)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS = 10 V

On-Resistance vs. Junction Temperature

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VGS = 4.5 V

3

Vishay SI1473DH Schematic [ru]