Vishay Si1433DH Schematic

New Product

P-Channel 30-V (D-S) MOSFET

Si1433DH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 30

DS(on)

0.150 at V

0.260 at V

GS

FEATURES

(Ω)I

= - 10 V

= - 4.5 V

(A)

D

- 2.2

- 1.6

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top View

Ordering Information: Si1433DH-T1 Si1433DH-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

• TrenchFET® Power MOSFETS: 1.8 V Rated

• Thermally Enhanced SC-70 Package

APPLICATIONS

• Load Switches

Marking Code

BE XX

- Notebook PC

- Servers

YY

Lot Traceability and Date Code

Part # Code

Pb-free

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 85 °C

A

TA = 25 °C

T

= 85 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 2.2 - 1.9

- 1.7 - 1.4

- 1.4 - 0.9

1.45 0.95

0.75 0.5

- 30

± 20

- 8

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 105 130

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72323 S-71951-Rev. B, 10-Sep-07

R

thJA

R

thJF

65 85

°C/W

38 48

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New Product

Si1433DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

r

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

V

DS

I

D

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = - 100 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 16 V, V

DS

= - 16 V, V

DS

= - 5 V, V

DS

V

= - 10 V, ID = - 2.2 A

GS

V

= - 4.5 V, ID = - 1.6 A

GS

= 0 V, TJ = 85 °C

GS

VDS = - 10 V, ID = - 2.2 A

IS = - 1.2 A, V

= - 15 V, V

V

= - 15 V, RL = 15 Ω

DD

≅ - 1 A, V

GS

= - 4.5 V, ID = - 2.2 A

GS

= - 10 V, RG = 6 Ω

GEN

= 0 V

= - 4.5 V

= 0 V

- 1 - 3 V

± 100 nA

- 1

- 5

µA

- 4 A

0.120 0.150

0.210 0.260

4S

- 0.85 - 1.2 V

3.1 5

1.0

nCGate-Source Charge

1.6

11 17

17 26

18 27

13 20

Ω

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

8

7

6

5

4

- Drain Current (A)I 3

D

2

1

0

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012345

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

4 V

3 V

Output Characteristics

8

7

6

5

4

3

- Drain Current (A)I D

2

1

0

012345

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

25 °C

Transfer Characteristics

Document Number: 72323

S-71951-Rev. B, 10-Sep-07

125 °C

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1433DH

Vishay Siliconix

0.75

0.60

0.45

0.30

- On-Resistance (Ω)r

DS(on)

0.15

0.00

VGS = 4.5 V

VGS = 10 V

012345678

ID - Drain Current (A)

On-Resistance vs. Drain Current

10

VDS = 15 V I

= 2.2 A

D

8

6

350

280

C

210

140

C - Capacitance (pF)

70

C

0

0 6 12 18 24 30

C

oss

rss

VDS - Drain-to-Source Voltage (V)

iss

Capacitance

1.6

VGS = 10 V I

= 2.2 A

1.4

1.2

D

4

- Gate-to-Source Voltage (V) 2

GS

V

0

0123456

Qg - Total Gate Charge (nC)

10

1

- Source Current (A)I

S

0.1

0.00 0.3 0.6 0.9

TJ = 150 °C

V

- Source-to-Drain Voltage (V)

SD

Source-Drain Diode Forward Voltage

Gate Charge

TJ = 25 °C

1.2 1.5

- On-Resistancer

1.0

(Normalized)

DS(on)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.70

0.56

0.42

ID = 2.2 A

0.28

- On-Resistance (Ω)r

DS(on)

0.14

0.00 0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72323 S-71951-Rev. B, 10-Sep-07

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Vishay Si1433DH Schematic [ru]