Vishay Si1419DH Schematic [ru]
Si1419DH
200
Conti
t (TJ = 150_C)
a
I
C/W
PRODUCT SUMMARY
V
(V) r
DS
−
−
5.0 @ VGS = −10 V
5.1 @ VGS = −6 V −0.37
SC-70 (6-LEADS)
1
D
2
D
3
G
SOT-363
DS(on)
(W) I
New Product
P-Channel 200-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS
(A) Qg (T yp)
D
−0.38
D
6
5
D
S
4
4.1
Marking Code
BH XX
Part # Code
YY
Lot Traceability
and Date Code
D Small, Thermally Enhanced SC-70
Package
D Ultra Low On-Resistance
APPLICATIONS
D Active Clamp Switch in DC/DC Power
Supplies
Vishay Siliconix
S
G
D
Pb-free
Available
Top View
Ordering Information: Si1419DH-T1—E3
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
=
nuous Drain Curren
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
DM
I
I
AS
E
P
DS
GS
AS
D
S
D
stg
−0.38
−0.27 −0.22
−1.3 −0.83
1.56 1.0
0.81 0.52
−200
"20
−0.5
−1.9
0.18 mJ
−55 to 150 _C
THERMAL RESISTANCE RATINGS
V
−0.3
A
W
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73241
S-50368—Rev. B, 28-Feb-05
Parameter Symbol Typical Maximum Unit
a
t v 5 sec
Steady State
R
thJA
thJF
60 80
100 125
34 45
_C/W
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1
Si1419DH
DS
,
GS
,
D
VDD = −100 V, RL = 100 W
g
ns
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
g
r
f
rr
rr
conditions for extended periods may affect device reliability.
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= −100 mA −2.5 −4.5 V
D
"100 nA
VDS = −200 V, VGS = 0 V −1
VDS = −200 V, VGS = 0 V, TJ = 85_C −5
VDS = −15 V, VGS = −10 V −0.5 A
VGS = −10 V, ID = −0.4 A 3.98 5.0
VGS = −6 V, ID = −0.4 A 4.06 5.1
VDS = −10 V, ID = −0.4 A 1.0 S
IS = −0.4 A, VGS = 0 V −0.80 −1.1 V
4.1 6.2
V
= −100 V, VGS = −10 V, ID = −0.4 A 0.8 nC
DS
1.3
f = 1.0 MHz 17 W
6 9
VDD = −100 V, RL = 100 W
ID ^ −1 A, V
= −4.5 V, Rg = 6 W
GEN
12 18
12 18
12 18
IF = −0.4 A, di/dt = 100 A/ms
55 83
130 200 nC
mA
W
ns
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2
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.4
0.3
0.2
− Drain Current (A)I
D
0.1
0.0
0246810
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
4 V
VDS − Drain-to-Source Voltage (V)
0.5
0.4
0.3
0.2
− Drain Current (A)I
D
0.1
TC = 125_C
25_C
0.0
012345
VGS − Gate-to-Source Voltage (V)
Document Number: 73241
S-50368—Rev. B, 28-Feb-05
−55_C
Si1419DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 6 V
VGS = 10 V
ID − Drain Current (A)
Gate Charge
VGS = 100 V
I
= 0.4 A
D
C − Capacitance (pF)
W )
− On-Resistance (r
DS(on)
8
7
6
5
4
3
2
1
0
0.0 0.1 0.2 0.3 0.4 0.5
10
8
Vishay Siliconix
250
200
150
100
50
C
rss
0
0 30 60 90 120 150
V
On-Resistance vs. Junction Temperature
2.2
1.9
VGS = 10 V
I
= 0.4 A
D
Capacitance
C
iss
C
oss
− Drain-to-Source Voltage (V)
DS
− Gate-to-Source Voltage (V)
GS
V
− Source Current (A)I
S
6
4
2
0
0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2
1
TJ = 150_C
TJ = 25_C
0.1
1.6
1.3
− On-Resiistance
(Normalized)
1.0
DS(on)
r
0.7
0.4
−50 −25 0 25 50 75 100 125 150
12
10
W )
8
6
− On-Resistance (r
4
DS(on)
2
T
− Junction Temperature (_C)
J
ID = 0.4 A
0.01
0 0.3 0.6 0.9
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 73241
S-50368—Rev. B, 28-Feb-05
1.2 1.5
0
0246810
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3
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