Vishay Si1411DH Schematic [ru]
Si1411DH
150
Conti
t (TJ = 150_C)
a
I
C/W
PRODUCT SUMMARY
V
(V) r
DS
−
−
2.6 @ VGS = −10 V
2.7 @ VGS = −6 V −0.51
SC-70 (6-LEADS)
1
D
2
D
3
G
SOT-363
DS(on)
Top View
(W) I
New Product
P-Channel 150-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS
(A) Qg (T yp)
D
−0.52
D
6
5
D
S
4
Ordering Information: Si1411DH-T1—E3
4.2 nC
Marking Code
BG XX
Part # Code
YY
D Small, Thermally Enhanced SC-70 Package
D Ultra Low On-Resistance
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
Lot Traceability
and Date Code
Vishay Siliconix
S
G
D
P-Channel MOSFET
Product Is
Completely
Pb-free
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
=
nuous Drain Curren
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pluse Avalanch Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
DM
I
I
AS
E
P
DS
GS
AS
D
S
D
stg
−0.52
−0.38 −0.3
−1.3 −0.83
1.56 1.0
0.81 0.52
−150
"20
−0.8
−2.1
0.22 mJ
−55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec
Steady State
R
thJA
thJF
60 80
100 125
34 45
V
−0.42
A
W
_C/W
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
www.vishay.com
1
Si1411DH
DS
,
GS
,
D
VDD = −75 V, RL = 75 W
g
ns
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
g
r
f
rr
rr
conditions for extended periods may affect device reliability.
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= −100 mA −2.5 −4.5 V
D
"100 nA
VDS = −150 V, VGS = 0 V −1
VDS = −150 V, VGS = 0 V, TJ = 85_C −5
VDS = −15 V, VGS = −10 V −0.8 A
VGS = −10 V, ID = −0.5 A 2.05 2.6
VGS = −6 V, ID = −0.5 A 2.14 2.7
VDS = −10 V, ID = −0.5 A 1.5 S
IS = −1.4 A, VGS = 0 V −0.80 −1.1 V
4.2 6.3
V
= −75 V, VGS = −10 V, ID = −0.5 A 0.9 nC
DS
1.3
f = 1.0 MHz 8.5 W
4.5 7
VDD = −75 V, RL = 75 W
ID ^ −1 A, V
GEN
= −4.5 V, Rg = 6 W
11 17
9 14
11 17
IF = −0.5 A, di/dt = 100 A/ms
36 55
65 100 nC
mA
W
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.8
0.7
VGS = 10 thru 5 V
0.6
0.5
0.4
0.3
− Drain Current (A)I
D
0.2
0.1
4 V
3 V
0.0
0246810
VDS − Drain-to-Source Voltage (V)
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Output Characteristics Transfer Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
− Drain Current (A)I
D
0.2
TC = 125_C
25_C
0.1
0.0
012345
VGS − Gate-to-Source Voltage (V)
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
−55_C
Si1411DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 6 V
VGS = 10 V
ID − Drain Current (A)
Gate Charge
VDS = 75 V
I
= 0.5 A
D
C − Capacitance (pF)
W )
− On-Resistance (r
DS(on)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
10
8
Vishay Siliconix
250
200
150
100
50
C
rss
0
0 30 60 90 120 150
V
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
I
= 0.5 A
2.0
D
Capacitance
C
iss
C
oss
− Drain-to-Source Voltage (V)
DS
− Gate-to-Source Voltage (V)
GS
V
0.1
− Source Current (A)I
S
6
4
2
0
0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2
1
TJ = 150_C
TJ = 25_C
1.5
1.0
− On-Resiistance
(Normalized)
DS(on)
r
0.5
0.0
−50 −25 0 25 50 75 100 125 150
6
5
W )
4
3
− On-Resistance (r
2
DS(on)
1
T
− Junction Temperature (_C)
J
ID = 0.5 A
0.01
0 0.3 0.6 0.9
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
1.2 1.5
0
0246810
www.vishay.com
3
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