Vishay SI1410EDH Schematic [ru]
Si1410EDH
C/W
PRODUCT SUMMARY
V
(V) r
DS
20
SOT-363
SC-70 (6-LEADS)
1
D
2
D
3
G
Top View
DS(on)
0.070 @ VGS = 4.5 V
0.080 @ VGS = 2.5 V 3.4
0.100 @ VGS = 1.8 V 3.0
New Product
N-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
(W) I
D
6
5
D
S
4
(A)
D
3.7
Marking Code
AA XX
Part # Code
YY
Lot Traceability
and Date Code
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
Vishay Siliconix
D
1 kW
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
TA = 25_C 1.56 1.0
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
3.7
2.6 2.0
1.4 0.9
0.81 0.52
20
"12
8
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec 60 80
Steady State
R
thJA
thJF
100 125
34 45
S
V
2.9
A
W
_C/W
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
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1
Si1410EDH
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
DS(on)
g
V
fs
SD
VDS = VGS, I
= 250 mA 0.45 V
D
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V 1
VDS = 16 V, VGS = 0 V, TJ = 85_C 5
VDS = 5 V, VGS = 4.5 V 4 A
VGS = 4.5 V, ID = 3.7 A 0.055 0.070
VGS = 2.5 V, I
VGS = 1.8 V, I
= 3.4 A
D
= 1.7 A
D
VDS = 10 V, ID = 3.7 A 10 S
IS = 1.4 A, VGS = 0 V 0.75 1.1 V
"1 mA
"10 mA
0.065 0.080
0.080 0.100
mA
W
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
d(on)
d(off)
g
V
gs
gd
r
f
= 10 V, VGS = 4.5 V, ID = 3.7 A 0.75 nC
DS
VDD = 10 V, RL = 10 W
VDD = 10 V, RL = 10
ID ^ 1 A, V
= 4.5 V, RG = 6 W
GEN
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
8
6
4
– Gate Current (mA)I
GSS
2
mA)
– Gate Current (I
GSS
10,000
1,000
100
0.1
5.6 8
1.10
0.15 0.25
0.4 0.6
1.9 2.8
ms
1.2 1.8
Gate Current vs. Gate-Source V oltage
10
TJ = 150_C
1
TJ = 25_C
0
0 3 6 9 12 15 18
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2
VGS – Gate-to-Source Voltage (V)
0.01
0 36912
V
– Gate-to-Source Voltage (V)
GS
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
Si1410EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
8
6
4
– Drain Current (A)I
D
2
0
012345
0.15
Output Characteristics Transfer Characteristics
VGS = 5 thru 2 V
1.5 V
1 V
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vishay Siliconix
8
25_C
6
TC = –55_C
4
– Drain Current (A)I
D
2
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VGS – Gate-to-Source Voltage (V)
1000
Capacitance
125_C
0.12
W )
0.09
0.06
– On-Resistance (r
DS(on)
0.03
0.00
– Gate-to-Source Voltage (V)
GS
V
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.0 1.5 3.0 4.5 6.0 7.5
ID – Drain Current (A)
Gate Charge
5
VDS = 10 V
I
= 3.7 A
D
4
3
2
1
800
600
400
C – Capacitance (pF)
200
C
0
048121620
1.8
1.6
W)
1.4
1.2
(Normalized)
– On-Resistance (r
1.0
DS(on)
0.8
C
iss
C
oss
rss
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
VGS = 4.5 V
I
= 3.7 A
D
0
0.0 1.5 3.0 4.5 6.0 7.5
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
Qg – Total Gate Charge (nC)
0.6
–50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
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