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SI1410EDH

Datasheet SI1410EDH Datasheet (Vishay) [ru]

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PRODUCT SUMMARY
V
(V) r
DS
20
SOT-363
SC-70 (6-LEADS)
1
D
2
D
3
G
Top View
DS(on)
0.070 @ VGS = 4.5 V
0.080 @ VGS = 2.5 V 3.4
0.100 @ VGS = 1.8 V 3.0
New Product
N-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
(W) I
D
6
5
D
S
4
(A)
D
3.7
Marking Code
AA XX
Part # Code
YY
Lot Traceability and Date Code
D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching D PA Switch D Level Switch
Vishay Siliconix
D
1 kW
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C TA = 85_C
TA = 25_C 1.56 1.0 TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
3.7
2.6 2.0
1.4 0.9
0.81 0.52
20
"12
8
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec 60 80
Steady State
R
thJA
thJF
100 125
34 45
S
V
2.9
A
W
_C/W
Document Number: 71409 S-03185—Rev. A, 05-Mar-01
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1
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
DS(on)
g
V
fs
SD
VDS = VGS, I
= 250 mA 0.45 V
D
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V 1
VDS = 16 V, VGS = 0 V, TJ = 85_C 5
VDS = 5 V, VGS = 4.5 V 4 A VGS = 4.5 V, ID = 3.7 A 0.055 0.070
VGS = 2.5 V, I VGS = 1.8 V, I
= 3.4 A
D
= 1.7 A
D
VDS = 10 V, ID = 3.7 A 10 S
IS = 1.4 A, VGS = 0 V 0.75 1.1 V
"1 mA
"10 mA
0.065 0.080
0.080 0.100
mA
W
Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
d(on)
d(off)
g
V
gs gd
r
f
= 10 V, VGS = 4.5 V, ID = 3.7 A 0.75 nC
DS
VDD = 10 V, RL = 10 W
VDD = 10 V, RL = 10
ID ^ 1 A, V
= 4.5 V, RG = 6 W
GEN
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
8
6
4
– Gate Current (mA)I
GSS
2
mA)
– Gate Current (I
GSS
10,000
1,000
100
0.1
5.6 8
1.10
0.15 0.25
0.4 0.6
1.9 2.8
ms
1.2 1.8
Gate Current vs. Gate-Source V oltage
10
TJ = 150_C
1
TJ = 25_C
0
0 3 6 9 12 15 18
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2
VGS – Gate-to-Source Voltage (V)
0.01 0 36912
V
– Gate-to-Source Voltage (V)
GS
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
8
6
4
– Drain Current (A)I
D
2
0
012345
0.15
Output Characteristics Transfer Characteristics
VGS = 5 thru 2 V
1.5 V
1 V
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vishay Siliconix
8
25_C
6
TC = –55_C
4
– Drain Current (A)I
D
2
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS – Gate-to-Source Voltage (V)
1000
Capacitance
125_C
0.12
W )
0.09
0.06
– On-Resistance (r
DS(on)
0.03
0.00
– Gate-to-Source Voltage (V)
GS
V
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.0 1.5 3.0 4.5 6.0 7.5 ID – Drain Current (A)
Gate Charge
5
VDS = 10 V I
= 3.7 A
D
4
3
2
1
800
600
400
C – Capacitance (pF)
200
C
0
048121620
1.8
1.6
W)
1.4
1.2
(Normalized)
– On-Resistance (r
1.0
DS(on)
0.8
C
iss
C
oss
rss
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
VGS = 4.5 V I
= 3.7 A
D
0
0.0 1.5 3.0 4.5 6.0 7.5
Document Number: 71409 S-03185—Rev. A, 05-Mar-01
Qg – Total Gate Charge (nC)
0.6 –50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
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Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
– Source Current (A)I
S
0.1
0.2
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C
1
0 0.3 0.6 0.9
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
TJ = 25_C
1.2 1.5
Threshold Voltage
W )
– On-Resistance (r
DS(on)
0.25
0.20
0.15 ID = 3.7 A
0.10
0.05
0.00
0123456
Single Pulse Power, Junction-to-Ambient
35
0.1
–0.0
–0.1
Variance (V)V
GS(th)
–0.2
–0.3
–0.4
–50 –25 0 25 50 75 100 125 150
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01 10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–4
ID = 250 mA
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
–3
10
28
21
Power (W)
14
7
0
0.1 1010.010.001
Time (sec)
Notes:
P
DM
t
1
t
2
t
thJA
t
thJA
100
1 2
(t)
= 100_C/W
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM – TA = PDMZ
4. Surface Mounted
–2
10
–1
1 10 60010
Square Wave Pulse Duration (sec)
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4
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
Single Pulse
–4
10
–3
10
–2
10
Square Wave Pulse Duration (sec)
Thermal Impedance
Normalized Effective Transient
Vishay Siliconix
–1
11010
Document Number: 71409 S-03185—Rev. A, 05-Mar-01
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5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1
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