Vishay Si1403BDL Schematic

New Product

P-Channel 2.5-V (G-S) MOSFET

Si1403BDL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.150 at V

- 20

0.175 at V

0.265 at V

(Ω)I

DS(on)

= - 4.5 V

GS

= - 3.6 V

GS

= - 2.5 V

GS

FEATURES

(A) Qg (Typ)

D

- 1.5

- 1.4

2.9

- 1.2

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top View

Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

• TrenchFET® Power MOSFET

Marking Code

OD XX

YY

Lot Traceability and Date Code

Part # Code

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 85 °C

A

TA = 25 °C

T

= 85 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 1.5 - 1.4

- 1.2 - 1.0

- 0.8 - 0.8

0.625 0.568

0.400 0.295

- 20

± 12

- 5

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 180 220

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 73253 S-71951-Rev. B, 10-Sep-07

R

thJA

R

thJF

165 200

°C/W

105 130

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New Product

Si1403BDL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Source-Drain Reverse Recovery Time

Body Diode Reverse Recovery Charge

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Q

rr

V

DS

I

D

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

= - 20 V, V

DS

= - 20 V, V

DS

= - 5 V, V

DS

V

= - 4.5 V, ID = - 1.5 A

GS

V

= - 3.6 V, ID = - 1.4 A

GS

V

= - 2.5 V, ID = - 0.8 A

GS

= 0 V

GS

= 0 V, TJ = 85 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 1.5 A

IS = - 0.8 A, V

= - 10 V, V

GS

= 0 V

GS

= - 4.5 V, ID = - 1.5 A

f = 1.0 MHz 9 Ω

V

= - 10 V, RL = 10 Ω

DD

≅ - 1 A, V

= - 4.5 V, Rg = 6 Ω

GEN

IF = - 0.8 A, di/dt = 100 A/µs

- 0.6 - 1.3 V

± 100 nA

- 1

- 5

- 2 A

0.120 0.150

0.140 0.175

0.220 0.265

3.4 S

- 0.8 - 1.1 V

29 4.5

0.65

1.0

13 20

30 45

28 42

13 20

12 25

48nC

µA

Ω

nCGate-Source Charge

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

4.0

3.2

2.4

1.6

- Drain Current (A)I

D

0.8

0.0

0.0 0.8 1.6 2.4 3.2 4.0

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VGS = 5 thru 2.5 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

2 V

1.5 V

1, 0.5 V

4.0

TC = - 55 °C

3.2

2.4

1.6

- Drain Current (A)I

D

0.8

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Gate-to-Source Voltage (V)

V

GS

25 °C

Transfer Characteristics

Document Number: 73253

S-71951-Rev. B, 10-Sep-07

125 °C

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.40

Si1403BDL

Vishay Siliconix

500

0.32

VGS = 2.5 V

0.24

- On-Resistance (Ω)r

0.16

DS(on)

0.08

0.00 01234

On-Resistance vs. Drain Current

5

VDS = 10 V I

= 1.5 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

V

1

ID - Drain Current (A)

VGS = 3.6 V

VGS = 4.5 V

400

300

200

C - Capacitance (pF)

100

0

048121620

1.6

1.4

1.2

1.0

- On-Resistance (Normalized)

DS(on)

r

0.8

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V I

= 1.5 A

D

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10

1

- Source Current (A)I

S

0.1

0.0 0.3 0.6 0.9 1.2 1.5

Source-Drain Diode Forward Voltage

Document Number: 73253 S-71951-Rev. B, 10-Sep-07

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

V

- Source-to-Drain Voltage (V)

SD

TJ = 25 °C

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.40

0.35

0.30

0.25

0.20

- On-Resistance (Ω)r

0.15

0.10

DS(on)

0.05

0.00 012345

ID = 0.8 A

VGS - Gate-to-Source Voltage (V)

ID = 1.5 A

On-Resistance vs. Gate-to-Source Voltage

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Vishay Si1403BDL Schematic [ru]