Vishay Si1400DL Schematic [ru]
New Product
N-Channel 20-V (D-S) MOSFET
Si1400DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) r
- 20
DS(on)
0.150 at V
0.235 at V
GS
GS
(Ω)I
= 4.5 V
= 2.5 V
D
(A)
1.7
1.3
SOT-363
SC-70 (6-LEADS)
D
1
D
2
G
3
Top View
Ordering Information: Si1400DL-T1
Si1400DL-T1-E3 (Lead (Pb)-free)
D
6
5
D
S
4
FEATURES
• TrenchFET® Power MOSFET: 2.5 V Rated
Marking Code
ND XX
YY
Lot Traceability
and Date Code
Part # Code
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
= 150 °C)
J
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
a
a
Operating Junction and Storage Temperature Range
TA = 25 °C
T
= 85 °C
A
TA = 25 °C
T
= 85 °C
A
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
, T
J
stg
1.7 1.6
1.2 1.0
0.8 0.8
0.625 0.568
0.40 0.295
20
± 12
5
W
- 55 to 150 °C
V
A
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
Steady State 180 220
Maximum Junction-to-Foot (Drain) Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71179
S-71951-Rev. C, 10-Sep-07
R
thJA
R
thJF
165 200
°C/W
105 130
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New Product
Si1400DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
Total Gate Charge
Gate-Drain Charge
Tur n - O n D e l ay Time
Rise Time
Turn-Off Delay Time
Fall Ti me
Source-Drain Reverse Recovery Time
V
GS(th)
I
GSS
I
DSS
I
V
D(on)
a
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
V
V
DS
I
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
= VGS, ID = 250 µA
DS
VDS = 0 V, VGS = ± 12 V
V
= 16 V, V
DS
V
V
DS
DS
GS
GS
= 16 V, V
GS
≥ 5 V, V
= 4.5 V, ID = 1.7 A
= 2.5 V, ID = 1.3 A
= 0 V
GS
= 0 V, TJ = 85 °C
= 4.5 V
GS
VDS = 10 V, ID = 1.7 A
IS = 0.8 A, V
= 10 V, V
V
= 10 V, RL = 20 Ω
DD
≅ 1 A, V
D
GS
GEN
= 0 V
GS
= 4.5 V, ID = 1.7 A
= 4.5 V, Rg = 6 Ω
IF = 0.8 A, di/dt = 100 A/µs
0.6 V
± 100 nA
1
5
µA
2A
0.123 0.150
0.195 0.235
Ω
5S
0.78 1.1 V
2.1 4.0
0.3
nCGate-Source Charge
0.4
10 17
30 50
14 25
ns
815
30 50
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
2.5 V
2 V
1.5 V
4
3
2
Drain Current (A)I
-
D
1
0
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2
VGS = 4.5 thru 3 V
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
- Drain-to-Source Voltage (V)
DS
Output Characteristics
5
4
3
2
Drain Current (A)I
-
D
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0
TC = 125 °C
25 °C
V
- Gate-to-Source Voltage (V)
GS
Transfer Characteristics
Document Number: 71179
S-71951-Rev. C, 10-Sep-07
-55 °C
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