Vishay Si1330EDL Schematic [ru]

Si1330EDL

Conti

t (TJ = 150_C)

a

I

A

C/W

PRODUCT SUMMARY

V

DS

(V)

60

SC-70 (3-LEADS)

G

1

S

2

r

DS(on)

2.5 @ VGS = 10 V

3 @ VGS = 4.5 V 0.23

8 @ VGS = 3 V 0.05

SOT-323

New Product

N-Channel 60-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

I

(W)

3

D

(A)

D

0.25

Marking Code

KD XX

Part # Code

YY

Lot Traceability
and Date Code

D ESD Protected: 2000 V

APPLICATIONS

D P-Channel Driver

− Notebook PC

− Servers

G

Vishay Siliconix

D

Top View

Ordering Information: Si1330EDL-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

0.25

0.2 0.19

S

D

stg

0.26 0.23

0.31 0.28

0.20 0.18

60

"20

1.0

−55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec

Steady State

R

thJA

thJF

355 400

380 450

285 340

S

V

0.24

W

_C

_C/W

Document Number: 72861
S-40853—Rev. A, 03-May-04

www.vishay.com

1

Si1330EDL

V

m

D(on)

DS(on)

ID ^ 0.25 A

ID ^

V

= 10V

T

Off Ti

Rg 10 W

Vishay Siliconix

New Product

SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage V

Dynamic

b

b

b

b

r

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

SD

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "10 V "1

VDS = 60 V, VGS = 0 V 1

VDS = 60 V, VGS = 0 V, TJ = 55_C

VGS = 10 V, VDS = 7.5 V 0.5

VGS = 4.5 V, VDS = 10 V 0.4

VGS = 3 V, VDS = 10 V 0.05

VGS = 10 V, ID = 0.25 A 1.0 2.5

VGS = 4.5 V, ID = 0.2 A 1.4 3

VGS = 3 V, ID = 0.025 A 3.0 8

VDS = 10 V, ID = 0.25 A 350 mS

IS = 0.23 A, VGS = 0 V 0.83 1.2 V

Limits

60

1 2.0 2.5

mA

10

A

W

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Time

-

urn-

me

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.

t

d(on)

t

d(off)

g

gs

gd

g

t

r

t

f

VDS = 10 V, VGS = 4.5 V

^ 0.25 A

I

VDD = 30 V, RL = 150 W

0.2 A,
Rg = 10 W

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1.0

0.8

0.6

0.4

− Drain Current (A)I
D

0.2

0.0
012345

Output Characteristics Transfer Characteristics

VGS = 10, 7 V

VDS − Drain-to-Source Voltage (V)

6 V

5 V

4 V

3 V

GEN

0.4 0.6

0.11

0.15

173

3.8 10

4.8 15

12.8 20

9.6 15

1.0

0.8

0.6

0.4

− Drain Current (A)I
D

0.2

0

012345

VGS − Gate-to-Source Voltage (V)

TJ = −55_C

25_C

nC

W

ns

125_C

www.vishay.com

2

Document Number: 72861

S-40853—Rev. A, 03-May-04