Si1330EDL
Conti
t (TJ = 150_C)
a
I
A
C/W
PRODUCT SUMMARY
V
DS
(V)
60
SC-70 (3-LEADS)
G
1
S
2
r
DS(on)
2.5 @ VGS = 10 V
3 @ VGS = 4.5 V 0.23
8 @ VGS = 3 V 0.05
SOT-323
New Product
N-Channel 60-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
I
(W)
3
D
(A)
D
0.25
Marking Code
KD XX
Part # Code
YY
Lot Traceability
and Date Code
D ESD Protected: 2000 V
APPLICATIONS
D P-Channel Driver
− Notebook PC
− Servers
G
Vishay Siliconix
D
Top View
Ordering Information: Si1330EDL-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
=
nuous Drain Curren
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
P
DM
I
DS
GS
D
0.25
0.2 0.19
S
D
stg
0.26 0.23
0.31 0.28
0.20 0.18
60
"20
1.0
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec
Steady State
R
thJA
thJF
355 400
380 450
285 340
S
V
0.24
W
_C
_C/W
Document Number: 72861
S-40853—Rev. A, 03-May-04
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1
Si1330EDL
V
m
D(on)
DS(on)
ID ^ 0.25 A
ID ^
V
= 10V
T
Off Ti
Rg 10 W
Vishay Siliconix
New Product
SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
b
b
b
b
r
(BR)DSS
GS(th)
GSS
DSS
I
D(on)
DS(on)
g
fs
SD
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "10 V "1
VDS = 60 V, VGS = 0 V 1
VDS = 60 V, VGS = 0 V, TJ = 55_C
VGS = 10 V, VDS = 7.5 V 0.5
VGS = 4.5 V, VDS = 10 V 0.4
VGS = 3 V, VDS = 10 V 0.05
VGS = 10 V, ID = 0.25 A 1.0 2.5
VGS = 4.5 V, ID = 0.2 A 1.4 3
VGS = 3 V, ID = 0.025 A 3.0 8
VDS = 10 V, ID = 0.25 A 350 mS
IS = 0.23 A, VGS = 0 V 0.83 1.2 V
Limits
60
1 2.0 2.5
mA
10
A
W
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Time
-
urn-
me
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
t
d(on)
t
d(off)
g
gs
gd
g
t
r
t
f
VDS = 10 V, VGS = 4.5 V
^ 0.25 A
I
VDD = 30 V, RL = 150 W
0.2 A,
Rg = 10 W
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
− Drain Current (A)I
D
0.2
0.0
012345
Output Characteristics Transfer Characteristics
VGS = 10, 7 V
VDS − Drain-to-Source Voltage (V)
6 V
5 V
4 V
3 V
GEN
0.4 0.6
0.11
0.15
173
3.8 10
4.8 15
12.8 20
9.6 15
1.0
0.8
0.6
0.4
− Drain Current (A)I
D
0.2
0
012345
VGS − Gate-to-Source Voltage (V)
TJ = −55_C
25_C
nC
W
ns
125_C
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Document Number: 72861
S-40853—Rev. A, 03-May-04
Si1330EDL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
− Gate-to-Source Voltage (V)
V
0.0 0.2 0.4 0.6 0.8 1.0
ID − Drain Current (mA)
On-Resistance vs. Junction Temperature
VGS = 10 V @ 250 mA
W )
− On-Resistance (r
DS(on)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.6
GS
Vishay Siliconix
7
VDS = 10 V
6
5
4
3
2
1
0
= 250 mA
I
D
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Source-Drain Diode Forward Voltage
1000
VGS = 0 V
Gate Charge
Qg − Total Gate Charge (nC)
1.2
0.8
− On-Resiistance
(Normalized)
DS(on)
r
0.4
0.0
−50 −25 0 25 50 75 100 125 150
TJ − Junction Temperature (_C)
VGS = 4.5 V
@ 200 mA
On-Resistance vs. Gate-Source Voltage
5
4
W )
3
2
− On-Resistance (r
1
DS(on)
ID = 200 mA
− Source Current (A)I
S
Variance (V)V
GS(th)
100
TJ = 125_C
10
1
0.00 0.3 0.6 0.9
VSD − Source-to-Drain Voltage (V)
TJ = 25_C
TJ = −55_C
Threshold Voltage Variance over Temperature
0.4
0.2
ID = 250 mA
−0.0
−0.2
−0.4
−0.6
1.2 1.5
0
0246810
VGS − Gate-to-Source Voltage (V)
Document Number: 72861
S-40853—Rev. A, 03-May-04
−0.8
−50 −25 0 25 50 75 100 125 150
TJ − Temperature (_C)
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3
Si1330EDL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
5
4
3
Power (W)
2
1
0
−2
10
−1
2
TA = 25_C
1 100 6001010
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
r
DS(on)
Safe Operating Area
Limited
I
DM
Limited
1
0.1
I
D(on)
− Drain Current (A)I
D
0.01
Limited
Single Pulse
TA = 25_C
BV
DSS
Limited
0.001
0.1 1 10 100
VDS − Drain-to-Source Voltage (V)
1 ms
10 ms
100 ms
1 s
dc, 10 s
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
2
1
0.1
Thermal Impedance
Normalized Effective Transient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
−3
Single Pulse
−2
10
−1
1 10 60010
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Notes:
P
DM
t
1
t
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM − TA = PDMZ
4. Surface Mounted
2
thJA
thJA
100
t
1
t
2
(t)
= 380_C/W
0.01
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4
Single Pulse
−4
10
−3
10
−2
10
−1
11010
Square Wave Pulse Duration (sec)
Document Number: 72861
S-40853—Rev. A, 03-May-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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