VISHAY Si1304DL Technical data

25

Conti

t (TJ = 150_C)

a

I

A

C/W

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PRODUCT SUMMARY

V

(V) r

DS

0.350 @ VGS = 4.5 V

0.450 @ VGS = 2.5 V 0.66

DS(on)

(W) I

N-Channel 25-V (D-S) MOSFET

(A) Qg (T yp)

D

0.75

SC-70 (3-LEADS)

1

G

2

S

SOT-323

1.3

Marking Code

3

D

KB XX

YY

Lot Traceability
and Date Code

Part # Code

Si1304DL

Vishay Siliconix

Top View

Ordering Information: Si1304DL-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

0.75

0.60 0.56

0.28 0.24

0.33 0.29

0.21 0.19

25

"8

3.0

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

a

t v 5 sec

Steady State

R

thJA

thJF

315 375

380 450

285 340

V

0.70

W

_C/W

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71315
S-41774—Rev. C, 04-Oct-04

www.vishay.com

1

Si1304DL

VDD = 15 V, RL = 20 W

g

ns

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

r

f

rr

VDS = VGS, I

= 250 mA 0.6 1.3 V

D

VDS = 0 V, VGS = "8 V "100 nA

VDS = 25 V, VGS = 0 V 1

VDS = 25 V, VGS = 0 V, TJ = 70_C 5

VDS = 5 V, VGS = 4.5 V 3.0 A

VGS = 4.5 V, ID = 0.75 A 0.280 0.350

VGS = 2.5 V, ID = 0.50 A 0.355 0.450

VDS = 15 V, ID = 0.75 A

1.5 S

IS = 0.24 A, VGS = 0 V 0.8 1.2 V

1.3

V

= 15 V, VGS = 4.5 V, ID = 0.75 A

DS

0.31

0.5

11 20

VDD = 15 V, RL = 20 W

ID ^ 0.75 A, V

= 4.5 V, Rg = 6 W

GEN

18 30

17 30

11 20

IF = 0.24 A, di/dt = 100 A/ms 30 60

mA

W

2.0

nC

ns

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

3.0

2.5

2.0

1.5

1.0

− Drain Current (A)I

D

0.5

0.0
0246810

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2

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

2 V

1.5 V

1 V

VDS − Drain-to-Source Voltage (V)

3.0
TC = −55_C

2.5

25_C

2.0

1.5

1.0

− Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS − Gate-to-Source Voltage (V)

Document Number: 71315

S-41774—Rev. C, 04-Oct-04

125_C