25
Conti
t (TJ = 150_C)
a
I
A
C/W
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PRODUCT SUMMARY
V
(V) r
DS
0.350 @ VGS = 4.5 V
0.450 @ VGS = 2.5 V 0.66
DS(on)
(W) I
N-Channel 25-V (D-S) MOSFET
(A) Qg (T yp)
D
0.75
SC-70 (3-LEADS)
1
G
2
S
SOT-323
1.3
Marking Code
3
D
KB XX
YY
Lot Traceability
and Date Code
Part # Code
Si1304DL
Vishay Siliconix
Top View
Ordering Information: Si1304DL-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
=
nuous Drain Curren
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
P
DM
I
DS
GS
D
S
D
stg
0.75
0.60 0.56
0.28 0.24
0.33 0.29
0.21 0.19
25
"8
3.0
−55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
a
t v 5 sec
Steady State
R
thJA
thJF
315 375
380 450
285 340
V
0.70
W
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
www.vishay.com
1
Si1304DL
VDD = 15 V, RL = 20 W
g
ns
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
r
f
rr
VDS = VGS, I
= 250 mA 0.6 1.3 V
D
VDS = 0 V, VGS = "8 V "100 nA
VDS = 25 V, VGS = 0 V 1
VDS = 25 V, VGS = 0 V, TJ = 70_C 5
VDS = 5 V, VGS = 4.5 V 3.0 A
VGS = 4.5 V, ID = 0.75 A 0.280 0.350
VGS = 2.5 V, ID = 0.50 A 0.355 0.450
VDS = 15 V, ID = 0.75 A
1.5 S
IS = 0.24 A, VGS = 0 V 0.8 1.2 V
1.3
V
= 15 V, VGS = 4.5 V, ID = 0.75 A
DS
0.31
0.5
11 20
VDD = 15 V, RL = 20 W
ID ^ 0.75 A, V
= 4.5 V, Rg = 6 W
GEN
18 30
17 30
11 20
IF = 0.24 A, di/dt = 100 A/ms 30 60
mA
W
2.0
nC
ns
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3.0
2.5
2.0
1.5
1.0
− Drain Current (A)I
D
0.5
0.0
0246810
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Output Characteristics Transfer Characteristics
VGS = 5 thru 2.5 V
2 V
1.5 V
1 V
VDS − Drain-to-Source Voltage (V)
3.0
TC = −55_C
2.5
25_C
2.0
1.5
1.0
− Drain Current (A)I
D
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS − Gate-to-Source Voltage (V)
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
125_C
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si1304DL
Vishay Siliconix
W )
− On-Resistance (r
DS(on)
On-Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS = 2.5 V
− Drain Current (A)
I
D
VGS = 4.5 V
Gate Charge
8
VDS = 15 V
I
= 0.75 A
D
6
200
150
100
C − Capacitance (pF)
50
0
0 5 10 15 20 25
On-Resistance vs. Junction Temperature
1.8
VGS = 4.5 V
I
1.6
1.4
Capacitance
C
iss
C
oss
C
rss
VDS − Drain-to-Source Voltage (V)
= 0.75 A
D
− Gate-to-Source Voltage (V)
GS
V
0.1
− Source Current (A)I
S
0.01
0.001
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10
1
TJ = 150_C
TJ = 25_C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
1.2
− On-Resiistance
(Normalized)
1.0
DS(on)
r
0.8
0.6
−50 −25 0 25 50 75 100 125 150
T
− Junction Temperature (_C)
J
0.8
W )
0.6
ID = 0.75 A
0.4
− On-Resistance (r
0.2
DS(on)
0.0
02468
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
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3
Si1304DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
0.1
ID = 250 mA
−0.0
−0.1
Variance (V)V
GS(th)
−0.2
−0.3
−0.4
−50 −25 0 25 50 75 100 125 150
TJ − Temperature (_C)
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
−4
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
−3
Normalized Thermal Transient Impedance, Junction-to-Foot
Single Pulse Power, Junction-to-Ambient
20
16
12
TA = 25_C
Power (W)
8
4
0
−3
10
10
−2
10
−1
1 10 60010
Square Wave Pulse Duration (sec)
−1
−2
Time (sec)
Notes:
P
DM
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM − TA = PDMZ
4. Surface Mounted
1 100 6001010
t
2
t
1
t
2
= 360_C/W
thJA
(t)
thJA
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
Thermal Impedance
Normalized Effective Transient
0.05
0.02
Single Pulse
0.01
−4
10
−3
10
−2
10
−1
11010
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Relia b i l i t y d a t a f o r S i l i c o n Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71315.
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Document Number: 71315
S-41774—Rev. C, 04-Oct-04
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