Vishay Si1304BDL Schematic

Si1304BDL

30

1.1

C/W

PRODUCT SUMMARY

V

(V)

DS

r

(W)

DS(on)

0.270 @ VGS = 4.5 V 0.90

0.385 @ VGS = 2.5 V 0.75

SC-70 (3-LEADS)

G

1

S

2

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

a

I

(A)

D

3

D

Qg (Typ)

Marking Code

KF XX

D TrenchFETr Power MOSFET D 100% R

YY

Lot Traceability and Date Code

Part # Code

Tested

g

Vishay Siliconix

RoHS

COMPLIANT

D

G

Top View

Ordering Information: Si1304BDL–T1–E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

TC = 25_C

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

TC = 70_C

TA = 25_C

TA = 70_C

TC = 25_C

TA = 25_C

TC = 25_C

TC = 70_C

TA = 25_C

TA = 70_C

DM

P

DS

GS "12

I

D

I

S

D

stg

30

0.90

0.71

b, c

0.85

b, c

0.68

4

0.31

b, c

0.28

0.37

0.24

b, c

0.34

b, c

0.22

–55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

b, d

t p 5 sec

R

thJA

thJF

315 375

285 340

S

N-Channel MOSFET

V

A

W

_C

_

Notes: a. Based on T b. Surface mounted on 1” x 1” FR4 board. c. t = 5 sec d. Maximum under steady state conditions is 360 _C/W.

Document Number: 73480 S–52057—Rev. B, 03–Oct–05

= 25_C.

C

www.vishay.com

1

Si1304BDL

Drain-S

a

W

p

V

DD

R

L

W

g

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

VDS Temperature Coefficient

V

Temperature Coefficient

GS(th)

DVDS/T

DV

GS(th)/TJ

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

ource On-State Resistance

Forward Transconductance

Dynamic

b

a

-

a

I

r

DS(on)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

DS

GS(th)

GSS

DSS

D(on)

g

fs

iss

oss

rss

g

gs

gd

g

d(on)

r

d(off)

f

VGS = 0 V, I

J

VDS = VGS, I

VDS = 0 V, VGS = "12 V "100

VDS = 30 V, VGS = 0 V 1

VDS = 30 V, VGS = 0 V, TJ = 70_C

VDS w 5 V, VGS = 4.5 V

VGS = 4.5 V, ID = 0.9

VGS =2.5 V, ID = 0.75 0.308 0.385

VDS = 15 V, ID = 0.9 2 S

V

= 15 V, VGS = 0 V, f = 1 MHz 30

DS

V

= 15 V, VGS = 4.5 V, ID = 0.9 1.8 2.7

DS

V

= 15 V, VGS = 2.5 V, ID= 0.9 0.4

DS

V

ID ^ 0.68 A, V

= 250 mA

D

I

= 250 mA

D

= 250 mA

D

f = 1 MHz 1.5 2.3

= 15 V, R

= 15 V,

= 22 W

= 22

= 4.5 V, Rg = 1 W

GEN

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

I

SM

SD

rr

a

b

IF = 0.28 A, di/dt = 100 A/ms, TJ = 25_C

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TC = 25_C

I

= 0.28 A

S

30 V

27.3

3

mV/_C

0.6 1.3 V

5

4 A

0.216 0.270

100

20

1.1 1.7

0.6

10 15

30 45

5 25

10 15

0.31

4

0.8 1.2 V

50 75 ns

105 160 nC

34

16

nA

mA

pF

nC

W

ns

A

ns

www.vishay.com

2

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

Si1304BDL

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

4

3

2

– Drain Current (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.6

Output Characteristics Transfer Characteristics curves vs. Temp

VGS = 3 thru 5 V

VGS = 2.5 V

VGS = 2.0 V

VGS = 1.5 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

2.0

1.5

1.0

TA = –55_C

– Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5

VGS – Gate-to-Source Voltage (V)

180.0

TA = 25_C

TA = 125_C

Capacitance

0.5

W )

0.4

0.3

– On-Resistance (r

DS(on)

0.2

0.1

– Gate-to-Source Voltage (V)

GS

V

VGS = 2.5 V

VGS = 4.5 V

012345

ID – Drain Current (A)

5

ID = 0.91 A

4

3

2

1

Qg–Gate Charge

VDS = 15 V

VDS = 24 V

150.0

120.0

90.0

60.0

C – Capacitance (pF)

30.0

0.0

0.0 5.0 10.0 15.0 20.0 25.0 30.0

On-Resistance vs. Junction Temperature

2.0

ID = 0.90 A

1.7

1.4

1.1

– On-Resistance

(Normalized)

DS(on)

r

0.8

C

oss

C

rss

– Drain-Source Voltage (V)

V

DS

VGS = 4.5 V, ID = 0.9 A

VGS = 2.5 V, ID = 0.75 A

iss

0

0.0 0.5 1.0 1.5 2.0

Qg – Total Gate Charge (nC)

Document Number: 73480 S–52057—Rev. B, 03–Oct–05

0.5 –50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (_C)

J

www.vishay.com

3

Vishay Si1304BDL Schematic [ru]