Vishay Si1303DL Schematic [ru]

P-Channel 2.5-V (G-S) MOSFET

Si1303DL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 20

DS(on)

0.430 at V

0.480 at V

0.700 at V

(Ω)

= - 4.5 V - 0.72

GS

= - 3.6 V - 0.68

GS

= - 2.5 V - 0.56

GS

(A)

I

D

FEATURES

•TrenchFET® Power MOSFETs

• 2.5 V Rated

Pb-free

Available

RoHS*

COMPLIANT

SOT-323

SC-70 (3-LEADS)

1

G

3

2

S

Top View

Ordering Information: Si1303DL-T1

Si1303DL-T1-E3 (Lead (Pb)-free)

D

Marking Code

LA XX

Part # Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

a

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C - 0.58 - 0.54

A

T

= 25 °C

A

= 70 °C 0.22

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 0.72 - 0.67

- 0.28

0.34

- 20

± 12

- 2.5

- 0.24

0.29

0.19

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

t ≤ 5 sec

Steady State

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71075
S-61007–Rev. D, 12-Jun-06

R

thJA

R

thJF

315 375

°C/WSteady State 360 430

285 340

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1

Si1303DL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge

Gate-Drain Charge

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

SD

Q

Q

Q

gd

t

d(on)

t

t

d(off)

t

t

rr

fs

gs

r

f

g

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

= V

DS

VDS = 0 V, VGS = ± 12 V

V

DS

= - 20 V, V

V

DS

V

= - 5 V, VGS = - 4.5 V

DS

V

GS

V

= - 3.6 V, ID = - 0.7 A

GS

V

= - 2.5 V, ID = - 0.3 A

GS

V

GS

IS = - 0.3 A, V

= - 10 V, V

V

DS

= - 10 V, RL = 10 Ω

V

DD

≅ - 1 A, V

I

D

IF = - 1 A, di/dt = 100 A/µs

= - 250 µA

GS, ID

= - 20 V, VGS = 0 V

= 0 V, TJ = 70 °C

GS

= - 4.5 V, ID = - 1 A

= - 10 V, ID = - 1 A

= 0 V

GS

= - 4.5 V, ID = - 1 A

GS

= - 4.5 V, RG = 6 Ω

GEN

-0.6 - 1.4 V

± 100 nA

- 1

- 5

µA

- 2.5 A

0.360 0.430

0.400 0.480

Ω

0.560 0.700

1.7 S

- 1.2 V

1.7 2.2

0.38

nCGate-Source Charge

0.63

915

31 45

12.5 20

ns

14 20

35 55

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless noted

6

VGS = 4.5 V

5

)

4

A( t
n

e
rr

uC

3

ni
ar

D

2

-I

D

1

0

02468

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

4 V

3.5 V

3 V

2.5 V

2 V

1, 1.5 V

6

5

)A( tne

4

r
ru

3
C

n
ia
rD

2

-I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

25°C

Transfer Characteristics

125 °C

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Document Number: 71075

S-61007–Rev. D, 12-Jun-06