Vishay Si1303DL Schematic [ru]

P-Channel 2.5-V (G-S) MOSFET

Si1303DL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 20

DS(on)

0.430 at V

0.480 at V

0.700 at V

(Ω)

= - 4.5 V - 0.72

GS

= - 3.6 V - 0.68

GS

= - 2.5 V - 0.56

GS

(A)

I

D

FEATURES

•TrenchFET® Power MOSFETs

• 2.5 V Rated

Pb-free

Available

RoHS*

COMPLIANT

SOT-323

SC-70 (3-LEADS)

1

G

3

2

S

Top View

Ordering Information: Si1303DL-T1

Si1303DL-T1-E3 (Lead (Pb)-free)

D

Marking Code

LA XX

Part # Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

a

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C - 0.58 - 0.54

A

T

= 25 °C

A

= 70 °C 0.22

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 0.72 - 0.67

- 0.28

0.34

- 20

± 12

- 2.5

- 0.24

0.29

0.19

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.

t ≤ 5 sec

Steady State

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71075
S-61007–Rev. D, 12-Jun-06

R

thJA

R

thJF

315 375

°C/WSteady State 360 430

285 340

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Si1303DL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge

Gate-Drain Charge

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

SD

Q

Q

Q

gd

t

d(on)

t

t

d(off)

t

t

rr

fs

gs

r

f

g

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

= V

DS

VDS = 0 V, VGS = ± 12 V

V

DS

= - 20 V, V

V

DS

V

= - 5 V, VGS = - 4.5 V

DS

V

GS

V

= - 3.6 V, ID = - 0.7 A

GS

V

= - 2.5 V, ID = - 0.3 A

GS

V

GS

IS = - 0.3 A, V

= - 10 V, V

V

DS

= - 10 V, RL = 10 Ω

V

DD

≅ - 1 A, V

I

D

IF = - 1 A, di/dt = 100 A/µs

= - 250 µA

GS, ID

= - 20 V, VGS = 0 V

= 0 V, TJ = 70 °C

GS

= - 4.5 V, ID = - 1 A

= - 10 V, ID = - 1 A

= 0 V

GS

= - 4.5 V, ID = - 1 A

GS

= - 4.5 V, RG = 6 Ω

GEN

-0.6 - 1.4 V

± 100 nA

- 1

- 5

µA

- 2.5 A

0.360 0.430

0.400 0.480

Ω

0.560 0.700

1.7 S

- 1.2 V

1.7 2.2

0.38

nCGate-Source Charge

0.63

915

31 45

12.5 20

ns

14 20

35 55

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless noted

6

VGS = 4.5 V

5

)

4

A( t
n

e
rr

uC

3

ni
ar

D

2

-I

D

1

0

02468

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

4 V

3.5 V

3 V

2.5 V

2 V

1, 1.5 V

6

5

)A( tne

4

r
ru

3
C

n
ia
rD

2

-I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

25°C

Transfer Characteristics

125 °C

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Document Number: 71075

S-61007–Rev. D, 12-Jun-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

Si1303DL

Vishay Siliconix

2.0

1.6

(Ω) ecnatsiseR-nO -r

1.2

0.8

)no(SD

0.4

0.0
0123456

VGS = 2.5 V

VGS = 3.6 V

I

- Drain Current (A)

D

VGS = 4.5 V

On-Resistance vs. Drain Current

12

9

6

3

VDS = 10 V

I

= 1 A

D

)V( egatloV ecruo

S

­o

t

­e

t
aG

-

S
G

V

250

C

200

)Fp( ecnaticapaC - C

150

100

50

0

048 12 16 20

iss

C

oss

C

rss

V

- Drain-to-Source Voltage (V)

DS

Capacitance

1.6

VGS = 4.5 V

I

= 1 A

D

ecnatsiseR

1.2

)dezilamroN(

­nO

0.8

-

)no(SD

r

0.4

0

01234

10

)

1
A
(

tne

r
r

uC

e

0.1
c
ruo

S

-I

S

0.01

0.001

0.0 0.3 0.6 0.9 1.2 1.5

V

Source-Drain Diode Forward Voltage

Document Number: 71075
S-61007–Rev. D, 12-Jun-06

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

TJ = 25 °C

- Source-to-Drain Voltage (V)

SD

0.0

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature ( C)

T

J

On-Resistance vs. Junction Temperature

2.5

2.0

(Ω)

e
cna

t
si

1.5

seR

-nO

-

1.0

)no(SD

r

0.5

0.0
0123456

V

GS

ID = 1 A

- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

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Si1303DL

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

0.4

0.3

)V( ecnairaVV

0.2

ID = 250 µA

0.1

)ht(SG

0.0

- 0.1

- 0.2

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

2

1

Duty Cycle = 0.5

ecnadepm

evitceffE dez

I

lamr

e
hT

i

lam

r
o

N tneisnarT

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

-2

-1

Square Wave Pulse Duration (sec)

20

16

)W( rewoP

12

TA = 25 °C

8

4

0

-3

10

10

-1

-2

1 100 6001010

Time (sec)

Single Pulse Powert

Notes:

P

DM

t

1

t

2

t

thJA

thJA

100

1

t

2

(t)

= 360 °C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

110 60010

2

1

Duty Cycle = 0.5

e
cnadepmI lamrehT

evi
t

ceffE dezilamroN tneisnarT

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71075.

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Document Number: 71075

S-61007–Rev. D, 12-Jun-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1