Vishay Si1302DL Schematic [ru]

Si1302DL

C/W

PRODUCT SUMMARY

V

DS

(V)

30

r

DS(on)

0.480 @ VGS = 10 V

0.700 @ VGS = 4.5 V 0.53

New Product

N-Channel 30-V (D-S) MOSFET

I

(W)

SC-70 (3-LEADS)

G

1

S

2

SOT-323

D

0.64

(A)

Marking Code

3

D

KA XX

YY

Part # Code

Lot Traceability
and Date Code

Vishay Siliconix

Top View

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C
TA = 70_C

TA = 25_C
TA = 70_C

P

I

DM

I

DS

GS

D

0.64

0.51 0.48

S

D

stg

0.26 0.23

0.31 0.28

0.20 0.18

30

"20

1.5

–55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

a

t v 5 sec 355 400

Steady State

R

thJA

thJF

380 450
285 340

V

0.60

A

W

_C

_C/W

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71249
S-02367—Rev. C, 23-Oct-00

www.vishay.com

1

Si1302DL

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Of f Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

gs
gd

d(on)

r

d(off)

f

rr

g

VDS = VGS, I

VDS = 0 V, V

= 250 mA

D

= "20 V

GS

VDS = 24 V, VGS = 0 V 1

VDS = 24 V, VGS = 0 V, TJ = 70_C

VDS = 5 V, VGS = 10 V 1.5 A
VGS = 10 V, ID = 0.6 A 0.410 0.480
VGS = 4.5 V, ID = 0.2 A 0.600 0.700

V

= 15 V, I

DS

= 0.6 A

D

IS = 0.23 A, VGS = 0 V 0.8 1.2 V

V

= 15 V, VGS = 10 V, ID = 0.6 A

DS

VDD = 15 V, RL = 30 W

VDD = 15 V, RL = 30

ID ^ 0.5 A, V

= 10 V, RG = 6 W

GEN

IF = 0.23 A, di/dt = 100 A/ms

1 V

"100 nA

5

0.75 S

0.86 1.4

0.24

0.08
5 10
8 15
8 15
7 15

15 30

mA

W

nC

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

1.0

0.8

0.6

0.4

– Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

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2

VGS = 10 thru 4 V

3 V

VDS – Drain-to-Source Voltage (V)

1.0

0.8

0.6

0.4

– Drain Current (A)I

D

0.2

TC = 125_C

25_C

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)

Document Number: 71249

S-02367—Rev. C, 23-Oct-00

–55_C